Year |
Citation |
Score |
2022 |
Ryu H, Kang JH. Devitalizing noise-driven instability of entangling logic in silicon devices with bias controls. Scientific Reports. 12: 15200. PMID 36071130 DOI: 10.1038/s41598-022-19404-0 |
0.314 |
|
2020 |
Kang JH, Ryu J, Ryu H. Exploring the behaviors of electrode-driven Si quantum dot systems: from charge control to qubit operations. Nanoscale. PMID 33346301 DOI: 10.1039/d0nr05070a |
0.357 |
|
2019 |
Kim I, Kim HS, Ryu H. Piezoresistivity of InAsP Nanowires: Role of Crystal Phases and Phosphorus Atoms in Strain-Induced Channel Conductances. Molecules (Basel, Switzerland). 24. PMID 31489942 DOI: 10.3390/Molecules24183249 |
0.354 |
|
2019 |
Ryu H, Hong S, Kim HS, Hong KH. Role of Quantum Confinement in 10 nm Scale Perovskite Optoelectronics. The Journal of Physical Chemistry Letters. 2745-2752. PMID 31082242 DOI: 10.1021/Acs.Jpclett.9B00645 |
0.431 |
|
2018 |
Ryu H, Kwon O. Fast, energy-efficient electronic structure simulations for multi-million atomic systems with GPU devices Journal of Computational Electronics. 17: 698-706. DOI: 10.1007/S10825-018-1138-4 |
0.461 |
|
2018 |
Choi S, Kim WY, Yeom MS, Ryu H. On the achievement of high fidelity and scalability for large-scale diagonalizations in grid-based DFT simulations International Journal of Quantum Chemistry. 118: e25622. DOI: 10.1002/Qua.25622 |
0.349 |
|
2016 |
Ryu H. A multi-subband Monte Carlo study on dominance of scattering mechanisms over carrier transport in sub-10-nm Si nanowire FETs. Nanoscale Research Letters. 11: 36. PMID 26815605 DOI: 10.1186/S11671-016-1249-4 |
0.322 |
|
2016 |
Ryu H, Jeong Y, Kang J, Cho KN. Time-efficient simulations of tight-binding electronic structures with Intel Xeon PhiTM many-core processors Computer Physics Communications. 209: 79-87. DOI: 10.1016/J.Cpc.2016.08.015 |
0.463 |
|
2015 |
Ryu H, Kim J, Hong KH. Atomistic study on dopant-distributions in realistically sized, highly P-doped Si nanowires. Nano Letters. 15: 450-6. PMID 25555203 DOI: 10.1021/Nl503770Z |
0.355 |
|
2015 |
Ryu H, Lee S, Fuechsle M, Miwa JA, Mahapatra S, Hollenberg LC, Simmons MY, Klimeck G. A tight-binding study of single-atom transistors. Small (Weinheim An Der Bergstrasse, Germany). 11: 374-81. PMID 25293353 DOI: 10.1002/Smll.201400724 |
0.628 |
|
2015 |
Tan YHM, Ryu H, Weber B, Lee S, Rahman R, Hollenberg LCL, Simmons MY, Klimeck G. Statistical modeling of ultra-scaled donor-based silicon phosphorus devices 2014 Silicon Nanoelectronics Workshop, Snw 2014. DOI: 10.1109/SNW.2014.7348589 |
0.698 |
|
2015 |
Weber B, Tan YHM, Mahapatra S, Watson TF, Ryu H, Lee S, Rahman R, Hollenberg LCL, Klimeck G, Simmons MY. Silicon at the fundamental scaling limit-atomic-scale donor-based quantum electronics 2014 Silicon Nanoelectronics Workshop, Snw 2014. DOI: 10.1109/SNW.2014.7348550 |
0.714 |
|
2015 |
Sengupta P, Ryu H, Lee S, Tan Y, Klimeck G. Numerical guidelines for setting up a k.p simulator with applications to quantum dot heterostructures and topological insulators Journal of Computational Electronics. DOI: 10.1007/S10825-015-0729-6 |
0.558 |
|
2015 |
Ahmed S, Sundaresan S, Ryu H, Usman M. Multimillion-atom modeling of InAs/GaAs quantum dots: interplay of geometry, quantization, atomicity, strain, and linear and quadratic polarization fields Journal of Computational Electronics. 14: 543-556. DOI: 10.1007/S10825-015-0682-4 |
0.554 |
|
2014 |
Weber B, Ryu H, Tan YH, Klimeck G, Simmons MY. Limits to metallic conduction in atomic-scale quasi-one-dimensional silicon wires. Physical Review Letters. 113: 246802. PMID 25541793 DOI: 10.1103/Physrevlett.113.246802 |
0.557 |
|
2014 |
Weber B, Tan YH, Mahapatra S, Watson TF, Ryu H, Rahman R, Hollenberg LC, Klimeck G, Simmons MY. Spin blockade and exchange in Coulomb-confined silicon double quantum dots. Nature Nanotechnology. 9: 430-5. PMID 24727686 DOI: 10.1038/Nnano.2014.63 |
0.665 |
|
2013 |
Ryu H, Lee S, Weber B, Mahapatra S, Hollenberg LC, Simmons MY, Klimeck G. Atomistic modeling of metallic nanowires in silicon. Nanoscale. 5: 8666-74. PMID 23897026 DOI: 10.1039/C3Nr01796F |
0.605 |
|
2013 |
Ryu H, Lee S, Weber B, Mahapatra S, Simmons MY, Hollenberg LCL, Klimeck G. A tight-binding study of channel modulation in atomic-scale Si:P nanowires International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 77-80. DOI: 10.1109/SISPAD.2013.6650578 |
0.469 |
|
2013 |
Ryu H, Nam D, Ahn B, Ruth Lee J, Cho K, Lee S, Klimeck G, Shin M. Optical TCAD on the Net: A tight-binding study of inter-band light transitions in self-assembled InAs/GaAs quantum dot photodetectors Mathematical and Computer Modelling. 58: 288-299. DOI: 10.1016/J.Mcm.2012.11.024 |
0.587 |
|
2012 |
Fuechsle M, Miwa JA, Mahapatra S, Ryu H, Lee S, Warschkow O, Hollenberg LC, Klimeck G, Simmons MY. A single-atom transistor. Nature Nanotechnology. 7: 242-6. PMID 22343383 DOI: 10.1038/Nnano.2012.21 |
0.605 |
|
2012 |
Weber B, Mahapatra S, Ryu H, Lee S, Fuhrer A, Reusch TC, Thompson DL, Lee WC, Klimeck G, Hollenberg LC, Simmons MY. Ohm's law survives to the atomic scale. Science (New York, N.Y.). 335: 64-7. PMID 22223802 DOI: 10.1126/Science.1214319 |
0.584 |
|
2012 |
Fuechsle M, Miwa JA, Mahapatra S, Ryu H, Lee S, Warschkow O, Hollenberg LCL, Klimeck G, Simmons MY. Spectroscopy of a Deterministic Single-Donor Device in Silicon Proceedings of Spie. 8400: 840006. DOI: 10.1117/12.919763 |
0.588 |
|
2012 |
Ryu H, Park H, Shin M, Vasileska D, Klimeck G. Feasibility, accuracy, and performance of contact block reduction method for multi-band simulations of ballistic quantum transport Journal of Applied Physics. 111: 063705. DOI: 10.1063/1.3694740 |
0.548 |
|
2011 |
Usman M, Tan YH, Ryu H, Ahmed SS, Krenner HJ, Boykin TB, Klimeck G. Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculations. Nanotechnology. 22: 315709. PMID 21737873 DOI: 10.1088/0957-4484/22/31/315709 |
0.641 |
|
2011 |
Sengupta P, Lee S, Steiger S, Ryu H, Klimeck G. Multiscale Modeling of a Quantum Dot Heterostructure Mrs Proceedings. 1370. DOI: 10.1557/Opl.2011.1055 |
0.591 |
|
2011 |
Lee S, Ryu H, Campbell H, Hollenberg LCL, Simmons MY, Klimeck G. Electronic structure of realistically extended atomistically resolved disordered Si:Pδ-doped layers Physical Review B. 84. DOI: 10.1103/Physrevb.84.205309 |
0.523 |
|
2011 |
Usman M, Heck S, Clarke E, Spencer P, Ryu H, Murray R, Klimeck G. Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm) Journal of Applied Physics. 109: 104510. DOI: 10.1063/1.3587167 |
0.58 |
|
2009 |
Usman M, Ryu H, Woo I, Ebert DS, Klimeck G. Moving toward nano-TCAD through multimillion-atom quantum-dot simulations matching experimental data Ieee Transactions On Nanotechnology. 8: 330-344. DOI: 10.1109/Tnano.2008.2011900 |
0.648 |
|
2009 |
Haley BP, Lee S, Luisier M, Ryu H, Saied F, Clark S, Bae H, Klimeck G. Advancing nanoelectronic device modeling through peta-scale computing and deployment on nanoHUB Journal of Physics: Conference Series. 180: 012075. DOI: 10.1088/1742-6596/180/1/012075 |
0.489 |
|
2008 |
Ryu H, Klimeck G. Contact block reduction method for ballistic quantum transport with semi-empirical sp3d5 tight binding band models International Conference On Solid-State and Integrated Circuits Technology Proceedings, Icsict. 349-352. DOI: 10.1109/ICSICT.2008.4734543 |
0.531 |
|
2008 |
Naumov M, Lee S, Haley B, Bae H, Clark S, Rahman R, Ryu H, Saied F, Klimeck G. Eigenvalue solvers for atomistic simulations of electronic structures with NEMO-3D Journal of Computational Electronics. 7: 297-300. DOI: 10.1007/S10825-008-0223-5 |
0.67 |
|
2008 |
Muralidharan B, Ryu H, Huang Z, Klimeck G. NEMO-3D based atomistic simulation of a double quantum dot structure for spin-blockaded transport Journal of Computational Electronics. 7: 403-406. DOI: 10.1007/S10825-008-0203-9 |
0.592 |
|
2007 |
Klimeck G, Ahmed SS, Bae H, Clark S, Haley B, Lee S, Naumov M, Ryu H, Saied F, Prada M, Korkusinski M, Boykin TB, Rahman R. Atomistic simulation of realistically sized nanodevices using NEMO 3-D - Part I: Models and benchmarks Ieee Transactions On Electron Devices. 54: 2079-2089. DOI: 10.1109/Ted.2007.902879 |
0.709 |
|
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