Year |
Citation |
Score |
2008 |
Hull R, Floro J, Graham J, Gray J, Gherasimova M, Portavoce A, Ross FM. Synthesis and functionalization of epitaxial quantum dot nanostructures for nanoelectronic architectures Materials Science in Semiconductor Processing. 11: 160-168. DOI: 10.1016/J.Mssp.2008.10.011 |
0.317 |
|
2006 |
Gherasimova M, Han J, Song YK, Nurmikko AV, Pan YL, Chang RK. UV LEDs for fluorescence detection of biological particles: From materials to applications Proceedings of Spie - the International Society For Optical Engineering. 6134. DOI: 10.1117/12.659611 |
0.359 |
|
2006 |
Song YK, Kim H, Atay T, Patterson WR, Nurmikko AV, Gherasimova M, Kim KK, Han J. Gallium nitride-organic semiconductor heterojunctions for optoelectronic devices Conference On Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006. DOI: 10.1109/CLEO.2006.4628171 |
0.309 |
|
2006 |
Davitt K, Song YK, Patterson WR, Nurmikko AV, Pan YL, Chang RK, Han J, Gherasimova M, Cobler PJ, Butler PD, Palermo V. Spectroscopic sorting of aerosols by a compact sensor employing UV LEDs Aerosol Science and Technology. 40: 1047-1051. DOI: 10.1080/02786820600936774 |
0.467 |
|
2006 |
Zhou L, Epler JE, Krames MR, Goetz W, Gherasimova M, Ren Z, Han J, Kneissl M, Johnson NM. Vertical injection thin-film AlGaN/AlGaN multiple-quantum-well deep ultraviolet light-emitting diodes Applied Physics Letters. 89. DOI: 10.1063/1.2408643 |
0.553 |
|
2006 |
Han J, Kim K, Su J, Gherasimova M, Nurmikko AV, Chichibu SF, Broadbridge C. MOCVD growth and characterization of AlGaInN nanowires and nanostructures Materials Research Society Symposium Proceedings. 892: 789-798. |
0.357 |
|
2005 |
Davitt K, Song YK, Patterson Iii W, Nurmikko A, Gherasimova M, Han J, Pan YL, Chang R. 290 and 340 nm UV LED arrays for fluorescence detection from single airborne particles. Optics Express. 13: 9548-55. PMID 19503158 DOI: 10.1364/Opex.13.009548 |
0.541 |
|
2005 |
Ren Z, Jeon SR, Gherasimova M, Cui G, Han J, Peng H, Song YK, Nurmikko AV, Zhou L, Goetz W, Krames M, Cho HK. Growth, characterization, and application of high Al-content AIGaN and high power III-nitride ultraviolet emitters Materials Research Society Symposium Proceedings. 831: 21-26. DOI: 10.1557/Proc-831-E1.4 |
0.455 |
|
2005 |
Han J, Kim K, Su J, Gherasimova M, Nurmikko A, Chichibu SF, Broadbridge C. MOCVD Growth and Characterization of AlGaInN Nanowires and Nanostructures Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff31-01 |
0.546 |
|
2005 |
Su J, Gherasimova M, Cui G, Tsukamoto H, Han J, Onuma T, Kurimoto M, Chichibu SF, Broadbridge C, He Y, Nurmikko AV. Growth of AlGaN nanowires by metalorganic chemical vapor deposition Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2126113 |
0.532 |
|
2005 |
Su J, Cui G, Gherasimova M, Tsukamoto H, Han J, Ciuparu D, Lim S, Pfefferle L, He Y, Nurmikko AV, Broadbridge C, Lehman A. Catalytic growth of group III-nitride nanowires and nanostructures by metalorganic chemical vapor deposition Applied Physics Letters. 86: 013105-1-013105-3. DOI: 10.1063/1.1843281 |
0.507 |
|
2005 |
He Y, Chen L, Song YK, Nurmikko AV, Jeon SR, Ren Z, Gherasimova M, Han J. Optical properties of sub-100 nm diameter nanoposts with embedded InGaN quantum well heterostructures Physica Status Solidi C: Conferences. 2: 2740-2743. DOI: 10.1002/Pssc.200461592 |
0.468 |
|
2005 |
Davitt K, Song YK, Nurmikko AV, Jeon SR, Gherasimova M, Han J, Pan YL, Chang RK. UV LED arrays for spectroscopic fingerprinting of airborne biological particles Physica Status Solidi C: Conferences. 2: 2878-2881. DOI: 10.1002/Pssc.200461591 |
0.36 |
|
2005 |
Gherasimova M, Su J, Cui G, Ren ZY, Jeon SR, Han J, He Y, Song YK, Nurmikko AV, Ciuparu D, Pfefferle L. A nanocluster route to zero- and one-dimensional quantum structures by MOCVD Physica Status Solidi C: Conferences. 2: 2361-2364. DOI: 10.1002/Pssc.200461572 |
0.532 |
|
2005 |
Su J, Gherasimova M, Cui G, Han J, Lim S, Ciuparu D, Pfefferle L, He Y, Nurmikko AV, Broadbridge C, Lehman A, Onuma T, Kurimoto M, Chichibu SF. Vapor-liquid-solid growth of III-nitride nanowires and heterostructures by metal-organic chemical vapor deposition Materials Research Society Symposium Proceedings. 831: 753-758. |
0.367 |
|
2004 |
Su J, Gherasimova M, Cui G, Han J, Lim S, Ciuparu D, Pfefferle L, He Y, Nurmikko AV, Broadbridge C, Lehman A, Onuma T, Kurimoto M, Chichibu SF. Vapor-liquid-solid Growth of III-Nitride Nanowires and Heterostructures by Metal-Organic Chemical Vapor Deposition Mrs Proceedings. 831. DOI: 10.1557/Proc-831-E12.4 |
0.541 |
|
2004 |
Ren Z, Jeon S, Gherasimova M, Cui G, Han J, Peng H, Song YK, Nurmikko AV, Zhou L, Goetz W, Krames M, Cho H. Growth, Characterization, and Application of High Al-content AlGaN and High Power III-Nitride Ultraviolet Emitters Mrs Proceedings. 831. DOI: 10.1557/PROC-831-E1.4 |
0.342 |
|
2004 |
Jeon SR, Gherasimova M, Ren Z, Su J, Cui G, Han J, Peng H, Song YK, Nurmikko AV, Zhou L, Goetz W, Krames M. High performance AlGaInN ultraviolet light-emitting diode at the 340 nm wavelength Japanese Journal of Applied Physics, Part 2: Letters. 43: L1409-L1412. DOI: 10.1143/Jjap.43.L1409 |
0.598 |
|
2004 |
Han J, Jeon SR, Gherasimova M, Su J, Cui G, Peng H, Makarona E, He Y, Song YK, Nurmikko AV, Zhou L, Goetz W, Krames M. Performance and application of high power ultraviolet AlGaInN light emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 5530: 61-68. DOI: 10.1117/12.566891 |
0.393 |
|
2004 |
Gherasimova M, Cui G, Jeon SR, Ren Z, Martos D, Han J, He Y, Nurmikko AV. Droplet heteroepitaxy of GaN quantum dots by metal-organic chemical vapor deposition Applied Physics Letters. 85: 2346-2348. DOI: 10.1063/1.1793343 |
0.501 |
|
2004 |
Peng H, Makarona E, He Y, Song YK, Nurmikko AV, Su J, Ren Z, Gherasimova M, Jeon SR, Cui G, Han J. Ultraviolet light-emitting diodes operating in the 340 nm wavelength range and application to time-resolved fluorescence spectroscopy Applied Physics Letters. 85: 1436-1438. DOI: 10.1063/1.1784537 |
0.561 |
|
2004 |
He Y, Song YK, Nurmikko AV, Su J, Gherasimova M, Cui G, Han J. Optically pumped ultraviolet AlGainN quantum well laser at 340 nm wavelength Applied Physics Letters. 84: 463-465. DOI: 10.1063/1.1637960 |
0.538 |
|
2004 |
Song YK, Nurmikko AV, Gherasimova M, Jeon SR, Han J. Versatile ultraviolet light emitting diodes for sensor applications Physica Status Solidi (a) Applied Research. 201: 2721-2725. DOI: 10.1002/Pssa.200405122 |
0.56 |
|
2004 |
Han J, Jeon SR, Gherasimova M, Song YK, Nurmikko AV, Zhou L, Goetz W, Krames M. Growth, characterization, and application of high power III-nitride ultraviolet emitters Proceedings - Electrochemical Society. 6: 183-191. |
0.41 |
|
2003 |
Gherasimova M, Su J, Cui G, Han J, Peng H, Makarona E, He Y, Song YK, Nurmikko AV. High power 330 nm AlInGaN UV LEDs in the high injection regime Materials Research Society Symposium - Proceedings. 798: 17-22. DOI: 10.1557/Proc-798-Y1.8 |
0.582 |
|
1999 |
Gherasimova M, Gaffey B, Mitev P, Guido LJ, Chang KL, Hsieh KC, Mitha S, Spear J. Synthesis of nitrogen-rich GaNAs semiconductor alloys and arsenic-doped GaN by metalorganic chemical vapor deposition Mrs Internet Journal of Nitride Semiconductor Research. 4. DOI: 10.1557/S1092578300002623 |
0.364 |
|
1998 |
Guido LJ, Mitev P, Gherasimova M, Gaffey B. Electronic properties of arsenic-doped gallium nitride Applied Physics Letters. 72: 2005-2007. DOI: 10.1063/1.121247 |
0.323 |
|
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