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Yih-Yin Lin, Ph.D. - Publications

Affiliations: 
2005 University of Michigan, Ann Arbor, Ann Arbor, MI 
Area:
Electronics and Electrical Engineering
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7 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2009 Wu Y, Lin Y, Huang H, Singh J. Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting Journal of Applied Physics. 105: 13117. DOI: 10.1063/1.3065274  0.577
2004 Lin Y, Singh J. Theory of polarization dependent intersubband transitions in p-type SiGe/Si self-assembled quantum dots Journal of Applied Physics. 96: 1059-1063. DOI: 10.1063/1.1755848  0.527
2002 Lin Y, Singh J. Self-assembled quantum dots: A study of strain energy and intersubband transitions Journal of Applied Physics. 92: 6205-6210. DOI: 10.1063/1.1515124  0.527
2002 Lin Y, Singh J. Study of ferroelectric-thin-film thickness effects on metal-ferroelectric-SiO2–Si transistors Journal of Applied Physics. 91: 9297-9302. DOI: 10.1063/1.1470249  0.497
2001 Lin Y, Jiang H, Singh J. A Theoretical Study of Structural Disorder and Photoluminescence Linewidth in InGaAs/GaAs Self Assembled Quantum Dots Mrs Proceedings. 707. DOI: 10.1557/Proc-707-H3.4.1  0.563
2001 Lin Y, Zhang Y, Singh J. A Study of Charge Control and Gate Tunneling in a Ferroelectric-Oxide-Silicon Field Effect Transistor Mrs Proceedings. 688. DOI: 10.1557/Proc-688-C11.5.1  0.482
2001 Lin YY, Zhang Y, Singh J, York R, Mishra U. Study of charge control and gate tunneling in a ferroelectric-oxide-silicon field effect transistor: Comparison with a conventional metal-oxide-silicon structure Journal of Applied Physics. 89: 1856-1860. DOI: 10.1063/1.1332425  0.536
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