1999 — 2003 |
Misra, Veena |
N/AActivity Code Description: No activity code was retrieved: click on the grant title for more information |
Advanced Gate Dielectrics For Silicon Carbide Metal Oxide Semiconductor Application @ North Carolina State University
9906255 Misra
Silicon carbide is an attractive material for high power, high frequency and high temperature applications. The ability of SiC to grow insulating SiO2 layers by thermal oxidation has been used in the fabrication of metal oxide semiconductor, MOS, devices such as field effect transistors, FETs. Significant research has been conducted on the SiC/SiO2 interface, but to date, i) a high density of interface states and fixed oxide charge and ii) poor reliability limit the functionality of SiC FET devices. Additionally, differences have been observed in the interface state densities between the 6H and 4H polytypes that are not understood, but may be related to differences between the band structures of these two polytypes, or alternatively to differences in the way suboxide, SiOx, bonding in the thermally grown oxide lines up with the interface band structure. The electric field in the SiO2 layer is higher than the peak field in the semiconductor by the ratio of dielectric constants. Since SiC devices are operated at very high electric fields, the gate dielectric field can become precariously high resulting in reliability problems.
This proposal will investigate several areas that are currently challenging the successful development of high performance SiC MOS devices. First, an atomic level understanding of the interfacial properties of SiO2 and SiC and its effect on the channel mobility must be obtained through electrical and analytical techniques. The disparate behavior between the 6H and 4H SiC polytypes is not understood and needs to be explored at the atomic level. Additionally, the implementation of advanced dielectrics on SiC to improve reliability problems must also be considered. SiC devices are operated at higher fields than Si devices. Therefore, a dielectric with a higher dielectric constant than SiO2 will experience a lower electric field. This warrants the investigation of high-K dielectrics such as Si3N4,A12O3, Ta2O5, TiO2 and ZrSiO4, etc. Many of these dielectrics are already being aggressively studied for their potential implementation on Si.
This program address the interfacial issues discussed above by applying remote plasma-assisted processing and rapid thermal processing to the formation of SiC-dielectric interfaces. This includes interfacial nitridation and implementation of alternative high-K dielectrics. The program will combine advanced analytical approaches to interface characterization, and as for Si device technology establish important links between electrical behavior and atomic scale structure and bonding. ***
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1 |
2000 — 2003 |
Kim, Ki Wook Misra, Veena Holton, William |
N/AActivity Code Description: No activity code was retrieved: click on the grant title for more information |
Coherent Nanotechnology Quantum Devices For Information Processing @ North Carolina State University
In a one-year small grant for exploratory research (SGER) granted by the ECS Division of NSF, we have explored new concepts for coherent quantum effects in nanotechnology devices. We have conceived of several new solid-state devices based on coupled coherent quantum phenomena that are potentially useful for computing and communications, and investigated their practicality through theoretical studies. With this initial success, we now propose to continue these studies with a more extensive and precise analysis of the phenomena and to initiate a coupled experimental program to show feasibility.
The nanotechnology structure that shows most promise for a quantum computer is based on the spin of exchange coupled electrons trapped in an array of gated quantum dots fabricated in either III-V or silicon. The proposed quantum computer is capable of 10 5 operations within the coherence time at a two-qubit operation rate at 10 8 Hz. It is readily scalable to a large number of elements, on the order of ~10 6 qubits, and electrically reconfigurable utilizing a planar architecture. This device is unquestionably manufacturable using technology enabled by the 70-nm technology node as specified in the "International Technology Roadmap for Semiconductors, 1999 Edition". We have established collaborations with industry that wish to take advantage of this nanotechnology once we have shown feasibility.
To fully examine the potential of our concepts, we propose to conduct a comprehensive study by analyzing the physical parameters of the devices to generate the desired energy structure and coupling strength among neighboring device elements, by investigating the limitations to coherence, and by simulating the operation of the device to operate it as a quantum computer. We further propose to undertake an experimental program to fabricate and test elementary prototypes of these devices to demonstrate feasibility. Collaboration between the theoretical and experimental studies should result in a nano-device structure that is technically interesting and potentially important for commercial use.
This research will be coupled to an educational program that provides interdisciplinary research for graduate students and for the development of courses that introduce quantum information processes at the graduate level within the Electrical and Computer Engineering Department at North Carolina State University.
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1 |
2000 — 2002 |
Misra, Veena |
N/AActivity Code Description: No activity code was retrieved: click on the grant title for more information |
Powre: Nano-Gate Engineering For Ultra-Fast Cmos Devices @ North Carolina State University
0074800 Misra
To obtain maximum performance from nanoscale CMOS devices, conventional polycrystalline silicon gate electrodes will have to be replaced by metallic layers. However, any replacement candidate for polysilicon must adhere to several criteria. Firstly, electrodes should not react with the underlying sub-1.0 nm gate dielectric. Secondly, the electrodes must be able to withstand high temperature processing in order to preserve the self-aligned structure of the MOS device, which has been the foundation of today's advanced technologies. Finally, to obtain desired threshold voltage for giga-scale performance, the electrodes must provide specific workfunctions, i.e. NMOS devices will require gates with workfunctions near 4 eV and PMOS devices will require gates with workfunctions near 5 eV. The need for two separate metals significantly complicates the process technology, both in material and cost issues.
The goal of this POWRE project is to investigate alternate approaches for nano-gate electrode formation using workfunction modulation of conducting metal oxides. Transparent conducting oxides offer the flexibility of workfunction modulation via chemical composition changes. This property can be used to benefit nanoscale CMOS. The main theme behind this proposed activity is to deposit a single conducting oxide layer on both the NMOS and PMOS region dielectrics and then via non-critical masking steps, selectively implanting certain elements to modulate the workfunction on N and P regions. This would eliminate the need for two separate metal deposition steps and drastically simplify integration issues. Moreover, conducting metal oxides, never before considered for Si gate electrode applications, can also provide superior thermal and chemical stability. If the above proposed activities are feasible, i.e. workfunction of conducting metal oxides can be tuned in to match the CMOS requirements, then this work offers tremendous potential for nanoscale CMOS advancement. ***
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1 |
2001 — 2008 |
Misra, Veena |
N/AActivity Code Description: No activity code was retrieved: click on the grant title for more information |
Pecase: Novel Approaches For Integration of Vertical Si Nanoelectronics @ North Carolina State University
PECASE: Novel Approaches for Integration of Vertical Si Nanoelectronics
Veena Misra
This proposal will investigate novel approaches in the integration of high-K dielectrics and metal gates with vertical CMOS devices. This integration offers low temperature compatibility since high-K gatestack formation in vertical devices can be performed after the source/drain regions are defined, thus avoiding any high temperature exposure. This offers tremendous opportunity for achieving ultimate CMOS performance. Within the integration scheme, several novel approaches will be evaluated. Thin layers of metals placed on grown SiO2 layers will be used to convert SiO2 to a high-K layer. Chemical vapor deposition of low metal content SiO2 layers will be evaluated for their high dielectric constant, low leakage current, and excellent mobility. Metal gates will be integrated using CVD processing and workfunction modulation will also be explored. The integration knowledge obtained will be evaluated on a novel self-assembled device in which both channel length and channel thickness are lithography independent. In the education plan, several initiatives will be pursued such as: a) organization of a workshop on integration challenges of vertical devices, b) development of a new course (classroom and web-based) in EE at NCSU entitled "Beyond Bulk CMOS", c) development of a 30-min video tape on nano-chip technology, and d) development of a "nano-chip kit" that will include a microscope, Si wafer, discrete MOSFET, an integrated circuit chip, human hair and cross-sectional scanning and transmission electron micrographs of nanoscale feaures. The goal here is to excite young students (K-12) about nanotechnology by providing them with an early exposure to this fast growing field.
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1 |
2003 — 2007 |
Ozturk, Mehmet (co-PI) [⬀] Misra, Veena |
N/AActivity Code Description: No activity code was retrieved: click on the grant title for more information |
Scalable Strained Silicon Mosfet Technology With Advanced Gatestack Materials @ North Carolina State University
The primary objective of this proposal is to demonstrate a scalable strained silicon technology that is integrated with advanced front-end processes. The scalability of the proposed approach is due to its applicability not only in planar bulk devices but also in a) strained silicon directly on oxide (SSOI) and in b) a novel double gate strained MOSFET (SSDG) that will be described in the proposal. The research will focus on strained Si layers since mobility enhancement can be obtained in both p-channel and n-channel devices. The program will consist of three research thrusts: a) Epitaxy of Strained Silicon layers, b) Advanced Gate stacks on Strained Silicon Layers and c) Device Demonstration. Since ITRS predicts the need for enhanced channel mobility by 2010, we believe initiation of this research effort in a timely manner is especially critical. The program is expected to stimulate innovation in development of alternative gate stack and junction processes suitable for strained layers. The program will take advantage of the diverse backgrounds of its investigators who have been working on advanced materials and processes for gate stacks, ultra-shallow junctions and low temperature epitaxy of Si and Si1-xGex alloys.
In the education and outreach activities, we plan to provide an enriching research experience for graduate students with emphasis on nanoscale materials and devices and establish a collaborative and interdisciplinary group research environment. We will also create a course on beyond planar devices for the graduate curriculum. Opportunities will also be provided for undergraduate students to get involved in the research through existing REU programs.
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2003 — 2007 |
Smirnov, Alex (co-PI) [⬀] Washburn, Sean (co-PI) [⬀] Misra, Veena Holton, William |
N/AActivity Code Description: No activity code was retrieved: click on the grant title for more information |
Silicon Based Nanoscale Quantum Devices @ North Carolina State University
This proposal describes the progress made in our present NSF grant 1 and proposes to continue our research to further investigate the properties of single electrons trapped within a vertical quantum dot. A technique has been developed to fabricate metal electrodes on the oxide insulated surface of silicon at dimensions ~ 60 nanometers so that with an appropriate applied voltage at low temperature, a single electron is trapped at either the silicon to silicon-oxide interface or at a silicon to silicon-carbide heterostructure interface of a suitably grown heteroepitaxial structure. Preliminary theoretical calculations, similar to those used in the design of a if pillar quantum computer lo 2 have been employed to predict the stable regions where a single and a few electrons can be trapped in these vertical quantum dot structures, and to estimate the magnitude of the exchange coupling between neighboring quantum dots as a function of the separation distance. A linear array of these quantum dots in a device design that allows independent addressing of the trapped electron spin states when the structure is in an external magnetic field, as described in the Project Description, define a quantum computer application for these devices. Herein we propose to fabricate additional devices and conduct low temperature electrical and magnetic-resonance measurements to verify the trapping dynamics of these quantum dots. To accomplish this, special low temperature solid-state amplifiers will be designed with the sensitivity required to make the measurements and perform the impedence transformation necessary to drive the signal lines for room temperature acquisition of the information. Initial measurements will examine many dots connected in parallel. These will be followed by examination of quantum dot pairs where the separation produces exchange coupling to study the nearest neighbor interactions. We will use similar quantum dot device structures with a suitably interconnected quantum dot arrays to make low temperature electron spin resonance measurements to determine the spin resonance properties. The g-factor, spin-lattice relaxation time (T1), the coherence time (T2), and nearest neighbor effects will be determined.
Graduate students within our group at NCSU will conduct the research in collaboration with our colleagues and students at the University of North Carolina who have millikelvin temperature electrical measurement capability. With successful conclusion of this research initiative, the societal impact could be extremely beneficial by providing a scalable quantum computer. Our nation will benefit from having available this most advanced computational capability for military and commercial use. The need for this advance is evidenced by the intense interest of the National Science Foundation, the National Security Agency, and the Department of Defense in this area.
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2004 — 2010 |
Kim, Ki Wook Smirnov, Alex [⬀] Misra, Veena Holton, William |
N/AActivity Code Description: No activity code was retrieved: click on the grant title for more information |
Mri: Development of a Quantum Engineering Laboratory @ North Carolina State University
This MRI proposal seeks NSF funds to develop unique cross-disciplinary Quantum Engineering Laboratory for comprehensive characterization and development of future generation of information devices that are based on quantum principles. Particularly, we propose to develop new material characterization tool capable of simultaneous millimeter-wave, magnetic resonance, and electrical experimental measurements (correlated spin and charge transport measurements) on arrays of single- electron quantum dots and other novel semiconductor materials. Intellectual merit of the proposed activity. The principal features of the proposed tool are (1) milli-Kelvin temperature and high magnetic field capabilities, required to reach high spin polarization and a quantum regime for single-electron information devices, and (2) capability for simultaneous electrical & magnetic measurement, required to examine the spin physics of charged carriers. Acquiring such a capability we will be able to understand the fundamental quantum physics in such systems and to exploit the spin degree of freedom for the new generation of information and communication devices that are based on quantum principles. To achieve these goals we propose to develop the first of its kind in the world materials characterization tool which will utilize high homogeneity (at least 10 ppm) 9 T magnet with the cold-bore to accommodate a top-loading sorption refrigerator with the base temperature of ca. 300 mK. It is proposed to develop a specialized top-loading insert to conduct synchronized electrical measurements while the spin states are manipulated by millimeter-wave pulses at 95, 130, and, possibly, 225 GHz. The instrument will be also capable of comprehensive electrical characterization of quantum dot materials at high spin polarization states as well as for electron spin resonance (ESR) measurements to understand the mechanisms of relaxation and spin-spin coupling. The broader impacts of the proposed activity. The major impact of the proposed activity will be in enhancing the infrastructure for research and education. Specifically, development of the Quantum Engineering Laboratory at NCSU fits the goal of the NSF MRI program because it will serve the following high priority areas: (1) to fill the gap between materials characterization facilities currently available in the USA and new quantum information devices which are theoretically proposed and which prototypes are already fabricated and will be fabricated in the upcoming months; (2) to facilitate the discovery of fundamental phenomena in spin-coupled and other materials containing unpaired electron spins for quantum information processing; (3) to foster the integration of these multidisciplinary efforts in quantum information devices and technology and to train students in this emerging technology; We are engaged in developing advanced instruction in this field through providing courses in engineering and chemistry at NCSU. Specifically, it is proposed that students and postdoctoral research associates will participate in all aspects of the instrument development and materials research studies. To publicize the development of next generation characterization tool it is proposed to hold a workshop during the grant period to educate the scientific community of this emerging technology. Twice a year, a short training course for students at NCSU and UNC will be offered. The course materials will be made freely available via Internet. We believe that these quantum electronic devices will become important to our Nation and therefore are in support of the national research infrastructure. This belief is supported by NSFs roadmap in information science and the developing roadmap in Quantum Computing being currently prepared by a coalition of government research funding agencies.
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1 |
2008 — 2012 |
Muth, John (co-PI) [⬀] Misra, Veena |
N/AActivity Code Description: No activity code was retrieved: click on the grant title for more information |
Collaborative Research: High Density Metal and Semiconductor Nanoparticles For Memory and Photonic Applications @ North Carolina State University
Abstract: Research Objectives and Approaches: The objective of this research is to study and optimize the interactions of nanoparticles in memory and photonic devices. Activities carried out under this project will include the formation and thermal stability of nanocrystals of the right size, size distribution and spacing by three viable methods, understanding electron injection into the metallic and semiconductor nanoparticles, understanding electron transfer between nanoparticles and the adjacent dielectric material and integrating nanoparticles in emerging memory and photonic devices such as FinFLASH and FinLight.
Intellectual Merit The success of the proposed activity will result in high performance memory and photonics devices which are fully compatible with CMOS. This will be accompanied by gaining fundamental insight into the interface between nanocrystals and its surrounding dielectrics. The collaboration with industry leaders in memory area will further solidify the approaches used in this work and transition them into viable manufacturable processes.
Broader Impact: The successful implementation of robust nanoparticle based devices will open up new opportunities not only in electronics but also in emerging areas such as biosensors and energy efficiency. PIs at both institutions will develop educational programs such as undergraduate nanolab course, development of a a nanocamp for high school students, an engineer?s week for even younger students, and career fairs for minorities for graduate schools which will enrich the student experience and also increase diversity of the education workforce. In addition, industrial internships provided to the graduate students will foster communication of industry needs to the university, while providing a highly trained workforce for industry in the future.
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2008 — 2009 |
Misra, Veena |
N/AActivity Code Description: No activity code was retrieved: click on the grant title for more information |
Sger: Novel Ultra Fast Heating Platform For in-Situ Study of Nanoparticle Based Devices @ North Carolina State University
Abstract-Veena Misra-SGER The objective of this proposal is to investigate a highly innovative route in the real-time formation and characterization of nanoparticle based electronic devices via a revolutionary ultra thin SiC membrane platform that provides ultra-fast temperature rates (1200degree centigrade/msec). This approach can revolutionize nanostructure formation which can substantially increase the commercialization potential of nanodevices.
Intellectual Merit: In recent years, nanoparticles have gained tremendous interest for their potential use in memory devices, chem-bio sensors and spintronics. However, one of the biggest challenges facing nanoparticle commercialization is the formation of dense, uniform and mono-disperse films. The inability to control kinetics of the anneal conditions, such as temperatures, ramp rates and cool down rates, typically used to form nanoparticles can lead to uncontrolled process leading to undesired sizes and variations. The study of kinetics at the millisecond range affords novel insight into nanostructure formation which will directly influence the device characteristics. Fully fabricated nanoscale devices will be integrated directly on the semiconductor membrane heating while undergoing simultaneous electrical characterization. Nanoscale MOSFETs and two-terminal coulomb blockade devices will be fabricated. The features of C-V and I-V curves, such as periodicity of steps, sharpness of steps, degree of charge storage and coulomb blockade window will be measured. With this system, over a hundred anneal/measurement steps can ultimately be achieved in a matter of seconds. Multiple discrete heaters, fabricated on a single wafer, can further expedite cycles of learning.
Broader Impact: This knowledge will impact the fields of memories, sensors, photonics and bioelectronics. The system being proposed here is highly amenable to enhance education modules due to its small footprint and ease of access. We will use this system as a visualization tool for undergraduates to correlate dynamic changes in size and shape of nanostructures to device characteristics in real-time. Broader use of controlled and organized nanostructures will result in commercialization opportunities and give high return on investment in nanotechnology.
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2011 — 2016 |
Franzon, Paul [⬀] Misra, Veena Muth, John (co-PI) [⬀] Rotenberg, Eric (co-PI) [⬀] |
N/AActivity Code Description: No activity code was retrieved: click on the grant title for more information |
Csr: Medium: Computing Via Monolithic Three Dimensional Assembly of Novel Floating Gate Transistors and Thin Film Semiconductors @ North Carolina State University
Energy-proportional and low power computing, together with the increasing demands for high resiliency to random faults could benefit enormously from a "Unified Memory" - a memory cell that operate either as a dynamic cell or as a non-volatile cell, and switch seamlessly between the two states. This effort focuses on the development of such a cell based on a dual floating gate concept. The gate stack is optimized to low voltage operation. Because the dynamic storage mode relies on direct tunneling, the electric fields required are modest, and ALD methods are used to construct robust oxides, this device has potential for high endurance when operating in the dynamic storage mode. The device has a relatively low leakage compared to a DRAM cell and thus needs less frequent refreshing. The read is fast - almost SRAM speeds - and non-destructive, reducing power needs. Conversion between dynamic and non-volatiles modes is very fast - an entire row at a time, and consumes a lot less power than interfacing to a solid-state drive. The device can simultaneously store a non-volatile bit with a different volatile bit enabling fast in-situ check-pointing and rollback or state-saving to improve error resiliency.
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2012 — 2015 |
Soper, Steven Riehn, Robert (co-PI) [⬀] Ozturk, Mehmet [⬀] Misra, Veena Dickey, Michael (co-PI) [⬀] |
N/AActivity Code Description: No activity code was retrieved: click on the grant title for more information |
Mri: Acquisition of An Electron Beam Lithography System For the Ncsu Nanofabrication Facility @ North Carolina State University
Objective: This proposal is for a new electron beam lithography and imaging system to augment the nanoscale fabrication capabilities at NC State University for a wide range of applications and users.
Intellectual Merit: This acquisition proposal is expected to lead to high-performance nano-devices for nanoelectronics, opto-electronics, nanofluidic bio-sensors, and nanogap sensors. The electron beam lithography system and imaging system will have the capability to reach the resolutions down to 10 nm on six inch wafers. The PI manages the Microelectronics center, where this new tool will be located. The new tool will be widely used, with over 40 faculty members actively involved in research that will be enabled by this tool; 20 specific research projects of high impact have been described in this proposal. This new instrument proposed here will catalyze and accelerate interdisciplinary research in nanoscience on a variety of technical fields.
Broader Impacts: The requested instrument will serve 4 colleges and 10 departments at NC State and hence is expected to serve a large population of faculty and their respective students. The research enabled by the requested system will have significant impact in both graduate and undergraduate research and training at NC State and the instrument will be integrated into several lab courses. Outreach activities include involvement with Shaw University, a local HBCU, and summer internships for minority students providing getting hands-on education and research training.
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2012 — 2018 |
Bhansali, Shekhar (co-PI) [⬀] Ozturk, Mehmet (co-PI) [⬀] Misra, Veena Muth, John (co-PI) [⬀] Jackson, Thomas Trolier-Mckinstry, Susan Lach, John |
N/AActivity Code Description: No activity code was retrieved: click on the grant title for more information |
Nsf Nanosystems Engineering Research Center For Advanced Self-Powered Systems of Integrated Sensors and Technologies (Assist) @ North Carolina State University
NERC FOR ADVANCED SELF-POWERED SYSTEMS OF SENSORS AND TECHNOLOGIES (ASSIST) VEENA MISRA, DIRECTOR NORTH CAROLINA STATE UNIV., PENN STATE UNIV., UNIV. VIRGINIA, FLORIDA INTERNATIONAL UNIV., KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, TOKYO INSTITUTE OF TECHNOLOGY, UNIV. ADELAIDE
The vision of ASSIST is to use nanotechnology to improve global health by enabling correlation between personal health and personal environment and by empowering patients and doctors to manage wellness and improve quality of life. ASSIST's nano-enabled energy harvesting, energy storage, nanoscale transistors and sensors will produce innovative, self-powered, wearable health monitoring systems that provide long-term sensing to enable effective management of chronic conditions and improve quality of life outcomes. ASSIST will advance environmental health research and policy and strengthen clinical trials. This vision, guided by industry partners, environmental/social scientists, and medical practitioners, will address the NAE Grand Challenge of Advanced Health Informatics.
The mission of ASSIST is to transform U.S. and global health informatics, electronics, and biomedical engineering industries through development of enabling nanotechnologies for energy harvesting, battery-free energy storage, and ultra-low power computation and communication, integrated with physiological and ambient nanosensors and biocompatible materials, to empower personal environmental health monitoring and emergency response. ASSIST goals are to:
-Advance discovery through fundamental knowledge and innovative solutions in human body energy harvesting and energy storage based on thermoelectrics, piezoelectrics and supercapacitors.
-Leverage nanostructured materials/structures to improve system energy efficiency orders of magnitude.
-Demonstrate wearable, reliable, low power, non-invasive sensors for health and environment and develop robust techniques for heterogeneous and hierarchical systems integration.
-Design intelligent power management for battery-free sensing, computation, and communication.
-Develop systems integration requirements, incorporating research on human and social factors, and demonstrate Exposure Tracking and Wellness Tracking testbeds.
-Create a culture of team-based research, education, and innovation, employing a diverse group focused on research, design, and production of solutions and systems for health and safety.
Form partnerships with precollege institutions to strengthen the STEM pipeline and promote technical literacy and motivation to contribute to solving NAE Grand Challenges.
Intellectual Merit: ASSIST's research on high-efficiency nanostructured, flexible thermoelectrics and nanodomain piezoelectrics will enhance harvested power levels from the human body while novel nanostructured electrodes will increase the storage density of capacitors. Exploration of nanoscale quantum well and quantum wire structures coupled with strain engineering will enhance the performance and reduce the energy consumption of advanced CMOS devices. Precise atomic scale control of heterostructured interfaces will significantly improve the energy efficiency of complementary inter-band tunnel transistors. Investigation of novel sensing modalities enabled by nanomaterials, will significantly reduce power levels and increase functionality of self-powered systems. For example, nanoenabled dry adhesives, nano-hydrogel composites, nanowires, nanomembranes and nano-enabled materials for enhanced light absorption and detection will result in high performance sensors. ASSIST will integrate these technologies into systems with intelligent power management strategies using hierarchical integration from nanoscale materials and devices to the human body interface.
Broader Impacts: Direct correlation of individual environmental exposure to health response for understanding impacts on chronic conditions (e.g., asthma, allergies, heart disease, autoimmune disease); Long-term sensing of critical environmental triggers and health vitals, leading to unprecedented data/tools for public health research and clinical trials; Enhanced understanding of onset and progression of disease and its effective management; Better informed environmental health regulatory policymaking; New tools for disaster emergency response; More rapid diagnosis and improved treatment effectiveness; Strengthened STEM pipeline to engineering careers through intensive school partnerships; Enhanced public science literacy and diversity of U.S. engineering graduates.
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2014 — 2017 |
Jur, Jesse (co-PI) [⬀] Misra, Veena |
N/AActivity Code Description: No activity code was retrieved: click on the grant title for more information |
Wearable Nanodevices, Linking Health and Environment: Ret in Engineering and Computer Science Site @ North Carolina State University
This award provides funding for a three year standard award to support a Research Experiences for Teachers (RET) in Engineering and Computer Science Site program at North Carolina State University (NCSU) entitled, "Wearable Nanodevices, Linking Health and Environment: RET in Engineering and Computer Science Site", under the direction of Dr. Veena Misra.
The NSF Nanosystems Engineering Research Center (NERC) for Advanced Self-Powered Systems of Integrated Sensors and Technologies (ASSIST), led by NCSU's College of Engineering in partnership with three local school districts and NCSU's Kenan Fellows Program, will provide a total of 42 middle and high school STEM teachers (14 per year) with a 7-week summer engineering research experience focused on developing and employing nano-enabled energy harvesting, energy storage, nanodevices and sensors to create innovative battery-free, body-powered, and wearable systems that monitor both internal health indicators and environmental conditions.
This project combines exceptional research experiences in NCSU's cutting-edge facilities with professional development to build teacher content knowledge and curriculum development and pedagogical skills. The program will build on the successful experiences of the ASSIST Center and individual mentors with RET teachers and the strength of the NCSU Kenan Fellows model for teacher research experiences developed through two previously funded RET Site programs. The project design includes experiences with ASSIST research mentors and will take place in exceptional nanofabrication and analytical instrumentation facilities. It incorporates teacher leadership development activities while also developing important pedagogical and instruction design skills. Participating teachers will create engaging and innovative activities based on wearable nanosensors to bring back to their classrooms.
ASSIST is developing new technologies that will lead to a paradigm shift in health informatics by allowing doctors, patients, and scientists to correlate health indicators with environmental conditions to better predict, manage, and treat diseases. The wearable nanodevice research in this project will be exciting for K-12 STEM teachers and their students while facilitating integration of nanoscience and systems engineering concepts into their science curricula. This RET Site will attract underrepresented students, including minorities and females, to engineering by engaging teachers and their students in exciting research experiences linked to personal health topics and global health issues. Partner school districts serve high numbers of high needs and underrepresented in STEM students; they will ensure participation of teachers serving in some of the highest needs schools.
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2018 — 2019 |
Misra, Veena Lobaton, Edgar Daniele, Michael [⬀] Shah, Nirmish |
N/AActivity Code Description: No activity code was retrieved: click on the grant title for more information |
Nsf Workshop On Reconfigurable Sensor Systems Integrated With Artificial Intelligence and Data Harnessing to Enable Personalized Medicine @ North Carolina State University
This project is to convene a 2-day workshop, attended by a forum of experts in engineering, data science, computer science, biological and behavioral sciences, to explore the state-of-the art and the needs for the next-generation of sensors and systems hardware that integrate advanced data science and computing capabilities. The workshop will focus on the gaps and opportunities for new hardware development as it relates to applications in medicine. The products of the workshop will be a report which provides a technological roadmap that defines the critical needs to bridge the gaps at the interface of sensor hardware, data science, and computer science. Intelligent, interactive, and networked sensor systems are a growing part of the biotechnological landscape, especially in the area of wearable, implantable, and point-of-use biosensors. The focus of this multi-phased workshop is to determine future strategies for advancing the fundamental understanding and engineering of reconfigurable sensor systems by integrating hardware with data harnessing, real-time learning, and artificial intelligence capabilities. Specifically, this workshop will define the state-of-the-art, necessary innovations, and future challenges facing the research and development of reconfigurable sensor systems for applications in understanding of human physiology, pathophysiology, metacognition, cognition, and behavioral psychology. To achieve this capability, this workshop aims to bring together the knowledge in hardware, theoretical models, methods and processes, and data from multiple disciplines to develop new platforms for addressing challenges at the human-device-data interface.
This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
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2022 — 2024 |
Lee, Bongmook (co-PI) [⬀] Misra, Veena |
N/AActivity Code Description: No activity code was retrieved: click on the grant title for more information |
Eager: a Novel Route For High Activation of Implanted P-Type Regions in Vertical Gallium Nitride Devices. @ North Carolina State University
Semiconductor based power electronics enabled efficiency improvements could save 1.2 trillion kilowatt-hour by 2030, avoiding approximately 733 million metric tons of CO2. Implementation of wide bandgap materials in power electronic devices is the single most important revolution to further increase system efficiency, reduce the size and weight of devices, improve reliability, and reduce life cycle cost. Among various wide bandgap materials, gallium nitride (GaN) vertical power devices are conceived as a next generation technology. Despite the success of gallium nitride lateral power devices, the implantation of vertical gallium nitride power devices is delayed by limitation of p-n junction and highly doped p layer formation. While n-type junctions via implantation have gained success, p-type junctions formed via implantation are still facing key challenges. Hence, developing an effective highly doped p-type process is a critical need to enable high performance gallium nitride devices. This project aims to address the current challenges of p-type doping on gallium nitride by a novel route for highly doped p-type junctions using the process of solid phase epitaxy. This presents a unique opportunity for achieving high current and high voltage power devices to significantly benefit power electronic systems. The impact of these advances could also drive enhancements in ultra-wide bandgap devices. The proposed novel p-doping can enable wide adoption of vertical gallium nitride power devices and help maintain leadership in wide bandgap semiconductor technology and economic competitiveness. This project provides a hand-on research experience for undergraduate students on device physics, processing, and characterization. The experimental results will be incorporated into undergraduate and graduate courses. <br/><br/>This project proposes a novel route for highly doped p-type in gallium nitride using the process of solid phase epitaxy after implantation. This solid phase epitaxy process involves the conversion of a metastable amorphous region containing the targeted p-type dopant into a crystalline region through modest temperature anneals. In prior work on other semiconductors, solid phase epitaxy has shown to result in increased active dopant concentration that is in great excess of the solid solubility limit, decreased damage, reduced channeling, and lower temperature operation. All these characteristics are highly desirable for vertical devices and warrant investigation of solid phase epitaxy in gallium nitride. The proposed process will involve three key steps: a pre-amorphization implantation, a p-type dopant implantation and a moderate temperature anneal to achieve high active concentration. This process is expected to convert the amorphous region containing the targeted p-type dopant into a crystalline region through modest temperature anneals. The recrystallization temperature and time depend on the orientation of the crystalline substrate and the type and concentration of implanted species. The proposed research aims to solve the fundamental problem in III-nitride devices towards high current and high voltage power devices and may also be applied towards emerging ultra-wideband gap materials. The research will be carried out in multiple tasks including molecular dynamic and process simulation, ion implantation, solid phase epitaxy anneal optimization, device fabrication and characterization of structures including transfer line method structures as well as diode structures to assess impact of solid phase epitaxy process on gallium nitride p-junction performance.<br/><br/>This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
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