Joseph P. Long, Ph.D.
Affiliations: | North Carolina State University, Raleigh, NC |
Area:
ultra-thin Si oxyitride devicesGoogle:
"Joseph Long"Mean distance: 10.05 | S | N | B | C | P |
Parents
Sign in to add mentor| Gerald Lucovsky | grad student | 2008 | NCSU | |
| (Spectroscopic and electrical studies of hafnium-based high-kappa thin film dielectrics on germanium surfaces.) | ||||
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Publications
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| Lucovsky G, Long JP, Chung KB, et al. (2009) Atomically-engineered interfaces between crystalline-Ge substrates and i) Nanocrystalline HfO2 and ii) Non-Crystalline Hf Si oxynitride high-K dielectrics? E-Journal of Surface Science and Nanotechnology. 7: 381-388 |
| Seo H, Chung KB, Long JP, et al. (2009) Preparation of native oxide and carbon-minimized ge surface by NH 4OH -based cleaning for high- k/Ge MOS gate stacks Journal of the Electrochemical Society. 156: H813-H817 |
| Lucovsky G, Long JP, Chung KB, et al. (2009) Predeposition plasma nitridation process applied to Ge substrates to passivate interfaces between crystalline-Ge substrates and Hf-based high-K dielectrics Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 294-299 |
| Chung KB, Long JP, Seo H, et al. (2009) Thermal evolution and electrical correlation of defect states in Hf-based high- κ dielectrics on n -type Ge (100): Local atomic bonding symmetry Journal of Applied Physics. 106 |
| Lucovsky G, Lee S, Long JP, et al. (2009) Interfacial transition regions at germanium/Hf oxide based dielectric interfaces: Qualitative differences between non-crystalline Hf Si oxynitride and nanocrystalline HfO2 gate stacks Microelectronic Engineering. 86: 224-234 |
| Lucovsky G, Seo H, Long JP, et al. (2009) Defect states in HfO2 on deposited on Ge(1 1 1) and Ge(1 0 0) substrates Applied Surface Science. 255: 6443-6450 |
| Lucovsky G, Long JP, Seo H, et al. (2008) Elimination of native Ge dielectrics at Ge/High-k dielectric interfaces for Ge MOS devices Ecs Transactions. 16: 381-395 |
| Chung KB, Seo H, Long JP, et al. (2008) Suppression of defect states in HfSiON gate dielectric films on n -type Ge(100) substrates Applied Physics Letters. 93 |
| Lee S, Long JP, Lucovsky G, et al. (2008) Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates Thin Solid Films. 517: 155-158 |
| Lee S, Long JP, Lucovsky G, et al. (2008) Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices Microelectronics Reliability. 48: 364-369 |