Ya-Chieh Hsin, Ph.D.

2010 University of Illinois, Urbana-Champaign, Urbana-Champaign, IL 
theoretical biophysics
"Ya-Chieh Hsin"
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Klaus Schulten grad student 2010 UIUC
 (Computational investigations of cellular functions: Three cases on membrane morphogenesis, organization and assembly of a multi-protein complex, and the molecular origin of muscle elasticity.)
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Liao WC, Chiang CT, Chyi JI, et al. (2015) Reduced interface States of atomic-layer-deposited Al2O3/AlGaN/GaN heterostructure containing in situ grown AlN/GaN cap layer and subjected to thermal oxidation Journal of the Electrochemical Society. 162: E160-E165
Liao WC, Chen CH, Hsu CW, et al. (2015) Analysis of threshold voltage shift in AlGaN/GaN heterostructure field-effect transistors with different buffer layers Journal of the Electrochemical Society. 162: H522-H526
Chyi JI, Hsin YM, Lee GY, et al. (2015) Investigations and improvements of AlInN/GaN HEMTs grown on Si Ecs Transactions. 66: 217-222
Chiu HC, Peng LY, Yang CW, et al. (2015) Analysis of the back-gate effect in normally OFF p-GaN gate high-electron mobility transistor Ieee Transactions On Electron Devices. 62: 507-511
Huang FH, Hsin YM. (2015) Broadband complementary metal-oxide semiconductor single-pole-double-throw switch with improved power handling capability using dual-gate metal-oxide semiconductor field-effect transistors Iet Microwaves, Antennas and Propagation. 9: 502-507
Liao WC, Chyi JI, Hsin YM. (2015) Investigations of dynamic performance in AlGaN/GaN HFETs with field plates by stressed C-V and dynamic on-resistance measurements Physica Status Solidi (a) Applications and Materials Science. 212: 1099-1103
Liao WC, Chen YL, Chen ZX, et al. (2014) Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs. Nanoscale Research Letters. 9: 474
Chiu HC, Wang HC, Yang CW, et al. (2014) High breakdown voltage and low thermal effect micromachined AlGaN/GaN HEMTs Ieee Transactions On Device and Materials Reliability. 14: 726-731
Shi JW, Chi KL, Li CY, et al. (2014) Large-Area p-i-n Photodiode With High-Speed and High-Efficiency Across a Wide Optical Operation Window (0.85 to 1.55 μm) Ieee Journal On Selected Topics in Quantum Electronics. 20
Chou FP, Hsieh YC, Huang CA, et al. (2014) Excess noise of 850-nm silicon avalanche photodiodes fabricated using CMOS process 2014 International Symposium On Next-Generation Electronics, Isne 2014
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