Jonathan Z. Sexton, Ph.D.
Affiliations: | 2004 | University of California, San Diego, La Jolla, CA |
Area:
STM/STS of gate oxides on compound semiconductors and adsorbates on organic semiconductorGoogle:
"Jonathan Sexton"Mean distance: 9.15
Parents
Sign in to add mentor| Andrew C. Kummel | grad student | 2004 | UCSD | |
| (Experimental and computational aspects of oxidation and deposition of insulating films on metal and semiconductor surfaces.) | ||||
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Publications
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| Winn DL, Hale MJ, Grassman TJ, et al. (2007) Electronic properties of adsorbates on GaAs(001)-c(2x8)/(2x4). The Journal of Chemical Physics. 127: 134705 |
| Hale MJ, Yi SI, Sexton JZ, et al. (2007) Erratum: “Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2×8)∕(2×4)” [J. Chem. Phys. 119, 6719 (2003)] The Journal of Chemical Physics. 127: 049902 |
| Sexton JZ, Kummel AC. (2004) Island morphology statistics and growth mechanism for oxidation of the Al(111) surface with thermal O2 and NO. The Journal of Chemical Physics. 121: 6518-24 |
| Hale MJ, Sexton JZ, Winn DL, et al. (2004) The influence of bond flexibility and molecular size on the chemically selective bonding of In2O and Ga2O on GaAs(001)-c(2 x 8)/(2 x 4). The Journal of Chemical Physics. 120: 5745-54 |
| Sexton JZ, Kummel AC. (2003) Comparison of density functional theory methods as applied to compound semiconductor-oxide interfaces: Slab versus cluster models Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 1908-1914 |
| Sexton JZ, Yi SI, Hale M, et al. (2003) Displacement of surface arsenic atoms by insertion of oxygen atoms into As-Ga backbonds Journal of Chemical Physics. 119: 9191-9198 |
| Hale MJ, Yi SI, Sexton JZ, et al. (2003) Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2×8)/(2×4) Journal of Chemical Physics. 119: 6719-6728 |
| Passlack M, Abrokwah JK, Droopad R, et al. (2003) Charge balanced Ga2O-GaAs interface and application to self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor Institute of Physics Conference Series. 174: 251-254 |
| Passlack M, Abrokwah JK, Droopad R, et al. (2002) Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor Ieee Electron Device Letters. 23: 508-510 |
| Komrowski AJ, Ternow H, Razaznejad B, et al. (2002) Dissociative adsorption of NO upon Al(111): Orientation dependent charge transfer and chemisorption reaction dynamics Journal of Chemical Physics. 117: 8185-8189 |