Sarah R. Bishop, Ph.D.
Affiliations: | 2010 | Chemistry | University of California, San Diego, La Jolla, CA |
Area:
STM/STS of gate oxides on compound semiconductors and adsorbates on organic semiconductorGoogle:
"Sarah Bishop"Mean distance: 9.15 | S | N | B | C | P |
Parents
Sign in to add mentorAndrew C. Kummel | grad student | 2010 | UCSD | |
(Chemical dynamics and bonding at gas/semiconductor and oxide/semiconductor interfaces.) |
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Publications
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Bishop SR, Clemens JB, Chagarov EA, et al. (2010) Theoretical analysis of initial adsorption of high-κ metal oxides on In(x)Ga(1-x)As(0 0 1)-(4×2) surfaces. The Journal of Chemical Physics. 133: 194702 |
Clemens JB, Bishop SR, Lee JS, et al. (2010) Initiation of a passivated interface between hafnium oxide and In(Ga)As(0 0 1)-(4x2). The Journal of Chemical Physics. 132: 244701 |
Lee JS, Bishop SR, Kaufman-Osborn T, et al. (2010) Monolayer passivation of Ge(100) surface via nitridation and oxidation Ecs Transactions. 33: 447-454 |
Shen J, Clemens JB, Chagarov EA, et al. (2010) Structural and electronic properties of group III rich In 0.53Ga0.47As(001) Surface Science. 604: 1757-1766 |
Lee JS, Bishop SR, Grassman TJ, et al. (2010) Plasma nitridation of Ge(100) surface studied by scanning tunneling microscopy Surface Science. 604: 1239-1246 |
Tran NL, Bishop SR, Grassman TJ, et al. (2009) NO chemisorption dynamics on thick FePc and ttbu-FePc films. The Journal of Chemical Physics. 130: 174305 |
Feldwinn DL, Clemens JB, Shen J, et al. (2009) Anomalous hybridization in the In-rich InAs(0 0 1) reconstruction Surface Science. 603: 3321-3328 |
Clemens JB, Bishop SR, Feldwinn DL, et al. (2009) Initial stages of the autocatalytic oxidation of the InAs(0 0 1)-(4 × 2)/c(8 × 2) surface by molecular oxygen Surface Science. 603: 2230-2239 |
Grassman TJ, Bishop SR, Kummel AC. (2009) Density functional theory study of first-layer adsorption of ZrO2 and HfO2 on Ge(1 0 0) Microelectronic Engineering. 86: 249-258 |
Grassman TJ, Bishop SR, Kummel AC. (2008) An atomic view of Fermi level pinning of Ge(100) by O2 Surface Science. 602: 2373-2381 |