Kyu S. Min, Ph.D.

Affiliations: 
2000 California Institute of Technology, Pasadena, CA 
Area:
photovoltaics
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"Kyu Min"
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SNBCP

Parents

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Harry A. Atwater grad student 2000 Caltech
 (Synthesis and properties of light-emitting silicon-based nanostructures.)
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Publications

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Yeh CC, Ma TP, Ramaswamy N, et al. (2007) Frenkel-Poole trap energy extraction of atomic layer deposited Al 2O3 and HfxAlyO thin films Applied Physics Letters. 91
Möck P, Lei Y, Topuria T, et al. (2003) Endotaxial Growth Mechanisms of Sn Quantum Dots in Si Matrix Mrs Proceedings. 770
Lei Y, Möck P, Topuria T, et al. (2003) Void-mediated formation of Sn quantum dots in a Si matrix Applied Physics Letters. 82: 4262-4264
Kanemitsu Y, Masuda K, Tanaka H, et al. (2002) Enhanced Exciton–Phonon Coupling in Spherical GaAs Nanocrystals Studied by Selective Excitation Spectroscopy Physica Status Solidi (a). 190: 529-532
Ragan R, Min KS, Atwater HA. (2001) Direct energy gap group IV semiconductor alloys and quantum dot arrays in SnxGe1 - x/Ge and SnxSi1 - x/Si alloy systems Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 87: 204-213
Kanemitsu Y, Tanaka H, Fukunishi Y, et al. (2000) Visible light emission from GaAs nanocrystals inSiO2films fabricated by sequential ion implantation Physical Review B. 62: 5100-5108
Brongersma ML, Kik PG, Polman A, et al. (2000) Size-dependent electron-hole exchange interaction in Si nanocrystals Applied Physics Letters. 76: 351-353
Kanemitsu Y, Tanaka H, Kushida T, et al. (2000) Luminescence properties of GaAs nanocrystals fabricated by sequential ion implantation Journal of Luminescence. 87: 432-434
Atwater HA, Ragan R, Min KS. (1999) Formation of Direct Energy Gap Group IV Semiconductor Alloys and Quantum Dot Arrays in Sn x Si 1−x /Si and Sn x Ge 1−x /Ge Alloy Systems Mrs Proceedings. 583
Kanemitsu Y, Tanaka H, Kushida T, et al. (1999) A near-infrared photoluminescence study of GaAs nanocrystals in SiO2 films formed by sequential ion implantation Journal of Applied Physics. 86: 1762-1764
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