Kyu S. Min, Ph.D.
Affiliations: | 2000 | California Institute of Technology, Pasadena, CA |
Area:
photovoltaicsGoogle:
"Kyu Min"Mean distance: 9.88 | S | N | B | C | P |
Parents
Sign in to add mentorHarry A. Atwater | grad student | 2000 | Caltech | |
(Synthesis and properties of light-emitting silicon-based nanostructures.) |
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Publications
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Yeh CC, Ma TP, Ramaswamy N, et al. (2007) Frenkel-Poole trap energy extraction of atomic layer deposited Al |
Möck P, Lei Y, Topuria T, et al. (2003) Endotaxial Growth Mechanisms of Sn Quantum Dots in Si Matrix Mrs Proceedings. 770 |
Lei Y, Möck P, Topuria T, et al. (2003) Void-mediated formation of Sn quantum dots in a Si matrix Applied Physics Letters. 82: 4262-4264 |
Kanemitsu Y, Masuda K, Tanaka H, et al. (2002) Enhanced Exciton–Phonon Coupling in Spherical GaAs Nanocrystals Studied by Selective Excitation Spectroscopy Physica Status Solidi (a). 190: 529-532 |
Ragan R, Min KS, Atwater HA. (2001) Direct energy gap group IV semiconductor alloys and quantum dot arrays in SnxGe1 - x/Ge and SnxSi1 - x/Si alloy systems Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 87: 204-213 |
Kanemitsu Y, Tanaka H, Fukunishi Y, et al. (2000) Visible light emission from GaAs nanocrystals inSiO2films fabricated by sequential ion implantation Physical Review B. 62: 5100-5108 |
Brongersma ML, Kik PG, Polman A, et al. (2000) Size-dependent electron-hole exchange interaction in Si nanocrystals Applied Physics Letters. 76: 351-353 |
Kanemitsu Y, Tanaka H, Kushida T, et al. (2000) Luminescence properties of GaAs nanocrystals fabricated by sequential ion implantation Journal of Luminescence. 87: 432-434 |
Atwater HA, Ragan R, Min KS. (1999) Formation of Direct Energy Gap Group IV Semiconductor Alloys and Quantum Dot Arrays in Sn x Si 1−x /Si and Sn x Ge 1−x /Ge Alloy Systems Mrs Proceedings. 583 |
Kanemitsu Y, Tanaka H, Kushida T, et al. (1999) A near-infrared photoluminescence study of GaAs nanocrystals in SiO2 films formed by sequential ion implantation Journal of Applied Physics. 86: 1762-1764 |