Corey J. Cochrane, Ph.D.
Affiliations: | 2013 | Engineering Science and Mechanics | Pennsylvania State University, State College, PA, United States |
Area:
atomic-scale chemical, physical, optical, mechanical and electronic properties of surfaces and supramolecular assembliesGoogle:
"Corey Cochrane"Mean distance: 10.45 | S | N | B | C | P |
Parents
Sign in to add mentor| Patrick Han | grad student | 2013 | Penn State | |
| (Development of new atomic scale defect identification schemes in micro / nanoelectronics incorporating digital signal processing methods for investigating zero/low field spin dependent transport and passage effects in electrically detected magnetic resona) | ||||
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Publications
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| Manning BR, Cochrane CJ, Lenahan PM. (2020) An improved adaptive signal averaging technique for noise reduction and tracking enhancements in continuous wave magnetic resonance. The Review of Scientific Instruments. 91: 033106 |
| Blacksberg J, Alerstam E, Cochrane CJ, et al. (2020) Miniature high-speed, low-pulse-energy picosecond Raman spectrometer for identification of minerals and organics in planetary science. Applied Optics. 59: 433-444 |
| Cochrane CJ, Kraus H, Neudeck PG, et al. (2018) Magnetic Field Sensing with 4H SiC Diodes: N vs P Implantation Materials Science Forum. 924: 988-992 |
| Anders MA, Lenahan PM, Cochrane CJ, et al. (2018) Physical nature of electrically detected magnetic resonance through spin dependent trap assisted tunneling in insulators Journal of Applied Physics. 124: 215105 |
| Cochrane CJ, Blacksberg J, Anders MA, et al. (2016) Vectorized magnetometer for space applications using electrical readout of atomic scale defects in silicon carbide. Scientific Reports. 6: 37077 |
| Cochrane CJ, Blacksberg J, Lenahan PM, et al. (2016) Magnetic Field Sensing with Atomic Scale Defects in SiC Devices Materials Science Forum. 858: 265-268 |
| Mutch MJ, Pomorski T, Bittel BC, et al. (2016) Band diagram for low-k/Cu interconnects: The starting point for understanding back-end-of-line (BEOL) electrical reliability Microelectronics Reliability |
| Anders MA, Lenahan PM, Cochrane CJ, et al. (2015) Relationship between the 4H-SiC/SiO2 interface structure and electronic properties explored by electrically detected magnetic resonance Ieee Transactions On Electron Devices. 62: 301-308 |
| Lenahan PM, Cochrane CJ, Lelis AJ. (2014) High, low, and zero field spin dependent recombination in 4H SiC metal oxide semiconductor field effect and bipolar junction transistors Ecs Transactions. 64: 111-122 |
| Cochrane CJ, Anders M, Mutch M, et al. (2014) Quantitative electrically detected magnetic resonance for device reliability studies Ieee International Integrated Reliability Workshop Final Report. 2015: 6-9 |