Hans-Joachim Queisser
Affiliations: | 1970-1998 | Max-Planck-Institut für Festkörperforschung in Stuttgart |
Area:
solid state physicsWebsite:
https://de.wikipedia.org/wiki/Hans-Joachim_QueisserGoogle:
"Hans-Joachim Queisser"Bio:
http://www.leopoldina.org/fileadmin/redaktion/Mitglieder/CV_Queisser_Hans-Joachim_EN.pdf
Mean distance: 14.27 | S | N | B | C | P |
Parents
Sign in to add mentor| Rudolf Hilsch | grad student | 1958 | Universität Göttingen | |
| (Zur Struktur dünner, bei tiefer Temperatur kondensierter Schichten zweier Alkalihalogenide) | ||||
| William B. Shockley | research scientist | 1959-1965 | Shockley Transistor Corporation | |
Children
Sign in to add trainee| Horst L. Störmer | grad student | 1977 | Universität Stuttgart |
| Karl Leo | grad student | 1986-1988 | Max Planck Institute for Solid State Research in Stuttgart |
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Publications
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| Queisser HJ. (2009) Detailed balance limit for solar cell efficiency Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 159: 322-328 |
| Wolf M, Brendel R, Werner JH, et al. (1998) Solar cell efficiency and carrier multiplication in Si1-xGex alloys Journal of Applied Physics. 83: 4213-4221 |
| Shockley W, Hooper WW, Queisser HJ, et al. (1964) Mobile electric charges on insulating oxides with application to oxide covered silicon p-n junctions Surface Science. 2: 277-287 |
| Shockley W, Queisser HJ, Hooper WW. (1963) Charges on oxidized silicon surfaces Physical Review Letters. 11: 489-490 |
| Shockley W, Queisser HJ. (1961) Detailed balance limit of efficiency of p-n junction solar cells Journal of Applied Physics. 32: 510-519 |