Eric J. Tonnis, Ph.D.
|2000||University of California, Berkeley, Berkeley, CA|
Mean distance: 4423.67
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|Hwang S, Tonnis E. (2014) A systematic methodology for etch chamber matching to meet leading edge requirements Asmc (Advanced Semiconductor Manufacturing Conference) Proceedings. 393-396|
|Vartanian V, Goolsby B, Chatterjee R, et al. (2004) Reduction of semiconductor process emissions by reactive gas optimization Ieee Transactions On Semiconductor Manufacturing. 17: 483-490|
|Tonnis EJ, Graves DB. (2002) Neutral gas temperatures measured within a high-density, inductively coupled plasma abatement device Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 20: 1787-1795|
|Tonnis EJ, Graves DB, Vartanian VH, et al. (2000) Inductively coupled, point-of-use plasma abatement of perfluorinated compounds and hydrofluorinated compounds from etch processes utilizing O2 and H2O as additive gases Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 18: 393-400|
|Vartanian V, Beu L, Lii T, et al. (2000) Plasma abatement reduces PFC emission Semiconductor International. 23: 191-192, 194, 196, 1|