David W. Humbird, Ph.D.
Affiliations: | 2004 | University of California, Berkeley, Berkeley, CA, United States |
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"David Humbird"Mean distance: 4423.67
Parents
Sign in to add mentor| David B. Graves | grad student | 2004 | UC Berkeley | |
| (Computational studies of plasma -surface interactions.) | ||||
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Publications
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| Végh JJ, Humbird D, Graves DB. (2008) Silicon etch in the presence of a fluorocarbon overlayer: The role of fluorocarbon cluster ejection Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 52-61 |
| Végh JJ, Humbird D, Graves DB. (2005) Silicon etch by fluorocarbon and argon plasmas in the presence of fluorocarbon films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 23: 1598-1604 |
| Humbird D, Graves DB. (2005) Atomistic simulations of Ar +M -ion-assisted etching of silicon by fluorine and chlorine Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 23: 31-38 |
| Humbird D, Graves DB. (2004) Improved interatomic potentials for silicon-fluorine and silicon-chlorine. The Journal of Chemical Physics. 120: 2405-12 |
| Humbird D, Graves DB. (2004) Molecular dynamics simulations of Si-F surface chemistry with improved interatomic potentials Plasma Sources Science and Technology. 13: 548-552 |
| Humbird D, Graves DB. (2004) Mechanism of silicon etching in the presence of CF 2, F, and Ar + Journal of Applied Physics. 96: 2466-2471 |
| Humbird D, Graves DB. (2004) Atomistic simulations of spontàneous etching of silicon by fluorine and chlorine Journal of Applied Physics. 96: 791-798 |
| Humbird D, Graves DB. (2004) Fluorocarbon plasma etching of silicon: Factors controlling etch rate Journal of Applied Physics. 96: 65-70 |
| Humbird D, Graves DB, Hua X, et al. (2004) Molecular dynamics simulations of Ar +-induced transport of fluorine through fluorocarbon films Applied Physics Letters. 84: 1073-1075 |
| Humbird D, Graves DB. (2002) Ion-induced damage and annealing of silicon. Molecular dynamics simulations Pure and Applied Chemistry. 74: 419-422 |