Scott W. Schmucker, Ph.D.
Affiliations: | 2012 | University of Illinois, Urbana-Champaign, Urbana-Champaign, IL |
Area:
scanning tunneling microscopy, nanofabrication, nanoelectronics, and IC chip reliabilityGoogle:
"Scott Schmucker"Mean distance: 13.99
Parents
Sign in to add mentor| Joseph Lyding | grad student | 2012 | UIUC | |
| (Scanning tunneling microscopy studies of fluorinated graphene films and field-directed sputter sharpening.) | ||||
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Publications
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| Hagmann JA, Wang X, Kashid R, et al. (2020) Electron-electron interactions in low-dimensional Si:P delta layers Physical Review B. 101 |
| Anderson EM, Campbell DM, Maurer LN, et al. (2020) Low thermal budget high-k/metal surface gate for buried donor-based devices Journal of Physics: Materials. 3: 035002 |
| Wang X, Wyrick J, Kashid RV, et al. (2020) Atomic-scale control of tunneling in donor-based devices Communications Physics. 3 |
| Schmucker SW, Namboodiri PN, Kashid R, et al. (2019) Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide. Physical Review Applied. 11 |
| Wyrick J, Wang X, Namboodiri P, et al. (2018) Atom-by-atom construction of a cyclic artificial molecule in Silicon. Nano Letters |
| McMorrow JJ, Cress CD, Arnold HN, et al. (2017) Vacuum ultraviolet radiation effects on two-dimensional MoS2 field-effect transistors Applied Physics Letters. 110: 073102 |
| Cress CD, Schmucker SW, Friedman AL, et al. (2016) Nitrogen-Doped Graphene and Twisted Bilayer Graphene via Hyperthermal Ion Implantation with Depth Control. Acs Nano |
| Arnold HN, Cress CD, McMorrow JJ, et al. (2016) Tunable Radiation Response in Hybrid Organic-Inorganic Gate Dielectrics for Low-Voltage Graphene Electronics. Acs Applied Materials & Interfaces |
| Friedman AL, Cress CD, Schmucker SW, et al. (2016) Electronic transport and localization in nitrogen-doped graphene devices using hyperthermal ion implantation Physical Review B - Condensed Matter and Materials Physics. 93 |
| Arnold HN, Sangwan VK, Schmucker SW, et al. (2016) Reducing flicker noise in chemical vapor deposition graphene field-effect transistors Applied Physics Letters. 108 |