Paul F. Ma, Ph.D.
Affiliations: | 2004 | Cornell University, Ithaca, NY, United States |
Area:
Chemical Engineering, Materials Science EngineeringGoogle:
"Paul Ma"Mean distance: 10.82 | S | N | B | C | P |
Parents
Sign in to add mentor| James R. Engstrom | grad student | 1998-2004 | Cornell | |
| (Investigations of thin film deposition and surface reactions of organometallics employing supersonic molecular beams.) | ||||
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Publications
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| Zhang W, Nahm RK, Ma PF, et al. (2013) Probing ultrathin film continuity and interface abruptness with x-ray photoelectron spectroscopy and low-energy ion scattering Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 31 |
| Ma PF, Lu J, Aubuchon J, et al. (2010) Plasma enhanced atomic layer deposition of TaN films for advanced interconnects Ecs Transactions. 33: 169-176 |
| Dube A, Sharma M, Ma PF, et al. (2007) Effects of interfacial organic layers on nucleation, growth, and morphological evolution in atomic layer thin film deposition Journal of Physical Chemistry C. 111: 11045-11058 |
| Ma PF, Dube A, Killampalli AS, et al. (2006) A supersonic molecular beam study of the reaction of tetrakis(dimethylamido)titanium with self-assembled alkyltrichlorosilane monolayers. The Journal of Chemical Physics. 125: 34706 |
| Dube A, Sharma M, Ma PF, et al. (2006) Effects of interfacial organic layers on thin film nucleation in atomic layer deposition Applied Physics Letters. 89 |
| Killampalli AS, Ma PF, Engstrom JR. (2005) The reaction of tetrakis(dimethylamido)titanium with self-assembled alkyltrichlorosilane monolayers possessing -OH, -NH2, and -CH3 terminal groups. Journal of the American Chemical Society. 127: 6300-10 |
| Schroeder TW, Lam AM, Ma PF, et al. (2004) Effects of atomic hydrogen on the selective area growth of Si and Si 1-xGe x thin films on Si and SiO 2 surfaces: Inhibition, nucleation, and growth Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 578-593 |
| Ma PF, Schroeder TW, Engstrom JR. (2002) Nucleation of copper on TiN and SiO2 from the reaction of hexafluoroacetylacetonate copper(I) trimethylvinylsilane Applied Physics Letters. 80: 2604-2606 |
| Schroeder TW, Ma PF, Lam AM, et al. (2001) Selective Si epitaxial growth technique employing atomic hydrogen and substrate temperature modulation Applied Physics Letters. 79: 2181-2183 |
| Zheng YJ, Ma PF, Engstrom JR. (2001) Etching by atomic hydrogen of Ge overlayers on Si(100) Journal of Applied Physics. 90: 3614-3622 |