Ananth Dodabalapur

Affiliations: 
Electrical and Computer Engineering University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Electronics and Electrical Engineering
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"Ananth Dodabalapur"

Parents

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Ben G. Streetman grad student 1986-1990 UT Austin

Children

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Tae H. Jung grad student 2006 UT Austin
Debarshi Basu grad student 2007 UT Austin
Daniel H. Fine grad student 2007 UT Austin
Suvid V. Nadkarni grad student 2007 UT Austin
Byungwook Yoo grad student 2007 UT Austin
Lawrence R. Dunn grad student 2008 UT Austin
Sudhanva Vasishta grad student 2022 UT Austin
Magnus Berggren post-doc 1996-1997 Bell Labs (Chemistry Tree)
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Publications

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Alam MH, Chowdhury S, Roy A, et al. (2022) Wafer-Scalable Single-Layer Amorphous Molybdenum Trioxide. Acs Nano
Liang K, Xu X, Zhou Y, et al. (2022) Nanospike electrodes and charge nanoribbons: A new design for nanoscale thin-film transistors. Science Advances. 8: eabm1154
Rodder M, Vasishta S, Dodabalapur A. (2020) Double-Gate MoS FET with a Multilayer Graphene Floating Gate: A Versatile Device for Logic, Memory, and Synaptic Applications. Acs Applied Materials & Interfaces
Krutko O, Dodabalapur A. (2020) Charge transport and dynamic response of organic and polymer transistors Journal of Applied Physics. 127: 105501
Wang X, Dodabalapur A. (2020) Going beyond polaronic theories in describing charge transport in rubrene single crystals Applied Physics Letters. 116: 093301
Rodder MA, Dodabalapur A. (2019) Symmetry of Gating in Double-Gate MoS2 FETs Ieee Transactions On Electron Devices. 66: 4468-4473
Liang K, Krutko OO, Dodabalapur A. (2019) Analysis of the Advantages of Nanostripe-Channel Geometries for Thin-Film Transistors Ieee Transactions On Electron Devices. 66: 2606-2613
Wang X, Register LF, Dodabalapur A. (2019) Redefining the Mobility Edge in Thin-Film Transistors Physical Review Applied. 11
Xu X, Kwon H, Gawlik B, et al. (2018) Enhanced Photoresponse in Metasurface-Integrated Organic Photodetectors. Nano Letters
Rodder MA, Dodabalapur A. (2018) Enhanced Hole Injection Into Single Layer WSe2 Ieee Journal of the Electron Devices Society. 6: 309-313
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