Christopher Locke, Ph.D.
Affiliations: | 2011 | Electrical Engineering | University of South Florida, Tampa, FL, United States |
Area:
Electronics and Electrical Engineering, Materials Science EngineeringGoogle:
"Christopher Locke"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| Stephen E. Saddow | grad student | 2011 | University of South Florida | |
| (Stress-strain management of heteroepitaxial polycrystalline silicon carbide films.) | ||||
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Publications
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| Severino A, Locke C, Anzalone R, et al. (2019) 3C-SiC Film Growth on Si Substrates Ecs Transactions. 35: 99-116 |
| Anzalone R, Camarda M, Locke C, et al. (2013) Stress nature investigation on heteroepitaxial 3C-SiC film on (100) Si substrates Journal of Materials Research. 28: 129-135 |
| Anzalone R, Camarda M, Locke C, et al. (2012) Stress evaluation on hetero-epitaxial 3C-SiC film on (100) Si substrates Materials Science Forum. 717: 521-524 |
| La Via F, D’Arrigo G, Severino A, et al. (2012) Patterned substrate with inverted silicon pyramids for 3C–SiC epitaxial growth: A comparison with conventional (001) Si substrate Journal of Materials Research. 28: 94-103 |
| Frewin CL, Locke C, Saddow SE, et al. (2011) Single-crystal cubic silicon carbide: an in vivo biocompatible semiconductor for brain machine interface devices. Conference Proceedings : ... Annual International Conference of the Ieee Engineering in Medicine and Biology Society. Ieee Engineering in Medicine and Biology Society. Annual Conference. 2011: 2957-60 |
| Oliveros A, Coletti C, Frewin CL, et al. (2011) Cellular interactions on epitaxial graphene on SiC (0001) substrates Materials Science Forum. 679: 831-834 |
| Anzalone R, Camarda M, D'Arrigo G, et al. (2011) Advanced Stress Analysis by Micro-Structures Realization on High Quality Hetero-Epitaxial 3C-SiC for MEMS Application Materials Science Forum. 133-136 |
| Anzalone R, D'Arrigo G, Camarda M, et al. (2011) Advanced Residual Stress Analysis and FEM Simulation on Heteroepitaxial 3C–SiC for MEMS Application Ieee\/Asme Journal of Microelectromechanical Systems. 20: 745-752 |
| Zhang F, Perng YC, Choi JH, et al. (2011) Atomic layer deposition of Pb(Zr,Ti)Ox on 4H-SiC for metal-ferroelectric-insulator-semiconductor diodes Journal of Applied Physics. 109 |
| Anzalone R, Camarda M, Alquier D, et al. (2010) Residual stress measurement and simulation of 3C-SiC single and poly crystal cantilevers. Materials Science Forum. 865-868 |