Rownak J. Zaman, Ph.D.
Affiliations: | 2008 | Electrical and Computer Engineering | University of Texas at Austin, Austin, Texas, U.S.A. |
Area:
Electronics and Electrical EngineeringGoogle:
"Rownak Zaman"Parents
Sign in to add mentor| Sanjay K. Banerjee | grad student | 2008 | UT Austin | |
| (A Comprehensive Study of Three-Dimensional Nano Structures Characteristics and Novel Devices.) | ||||
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Publications
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| Zaman RJ, Matthews K, Hasan MM, et al. (2009) A novel low-cost trigate process suitable for embedded CMOS 1T-1C pseudo-SRAM application Ieee Transactions On Electron Devices. 56: 448-455 |
| Zaman RJ, Mathews K, Quintanilla R, et al. (2007) Comparison of tri-gate FET characteristics for various hydrogen annealing process conditions Proceedings - Ieee International Soi Conference. 139-140 |
| Zaman RJ, Mathews K, Xiong W, et al. (2007) Trigate FET device characteristics improvement using a hydrogen anneal process with a novel hard mask approach Ieee Electron Device Letters. 28: 916-918 |
| Zaman RJ, Xiong W, Quintanilla R, et al. (2005) Effects of Hydrogen Annealing Process Conditions on Nano Scale Silicon (011) Fins Mrs Proceedings. 872: 37-41 |
| Xiong W, Rinn Cleavelin C, Wise R, et al. (2005) Full/partial depletion effects in FinFETs Electronics Letters. 41: 504-506 |
| Zaman RJ, Xiong W, Quintanilla R, et al. (2005) Effects of hydrogen annealing process conditions on nano scale silicon (011) fins Materials Research Society Symposium Proceedings. 872: 37-41 |