Manuel Quevedo-Lopez

Chemistry University of Texas at Dallas, Richardson, TX, United States 
Materials Science Engineering
"Manuel Quevedo-Lopez"
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El Bouanani L, Serna MI, M N Hasan S, et al. (2020) Large-Area Pulsed Laser Deposited Molybdenum Diselenide Heterojunction Photodiodes. Acs Applied Materials & Interfaces
Rodriguez-Davila RA, Mejia I, Chapman RA, et al. (2019) Performance and Reliability Comparison of ZnO and IGZO Thin-Film Transistors and Inverters Fabricated at a Maximum Process Temperature of 115 °C Ieee Transactions On Electron Devices. 66: 3861-3866
Pintor-Monroy I, Barrera D, Murillo-Borjas B, et al. (2018) Tunable Electrical and Optical Properties of Nickel Oxide (NiOx) Thin Films for Fully Transparent NiOx-Ga2O3 p-n Junction Diodes. Acs Applied Materials & Interfaces
Ochoa-Estrella FJ, Vera-Marquina A, Mejia I, et al. (2018) Pressure influence on structural and optical behaviors of ZnTe thin films grown by PLD Journal of Materials Science: Materials in Electronics. 29: 7629-7636
Ochoa-Estrella FJ, Vera-Marquina A, Mejia I, et al. (2018) Structural, optical, and electrical properties of ZnTe:Cu thin films by PLD Journal of Materials Science: Materials in Electronics. 29: 20623-20628
Qaradaghi V, Mejia I, Quevedo-Lopez M. (2017) Fabrication and Analysis of Thin Film CdTe/CdS-Based Avalanche Photodiodes Ieee Electron Device Letters. 38: 489-492
Zhang B, Zheng T, Sun C, et al. (2017) Electrical transport characterization of Al and Sn doped Mg 2 Si thin films Journal of Alloys and Compounds. 720: 156-160
Serna MI, Yoo SH, Moreno S, et al. (2016) Large Area Deposition of MoS2 by Pulsed Laser Deposition with In-Situ Thickness Control. Acs Nano
Chapman RA, Rodriguez-Davila RA, Mejia I, et al. (2016) Nanocrystalline ZnO TFTs Using 15-nm Thick Al₂O₃ Gate Insulator: Experiment and Simulation Ieee Transactions On Electron Devices
Mejia I, Gutierrez-Heredia G, Salas-Villasenor AL, et al. (2016) Solution-Based CdS on HfO2 Thin Films for High-Gain and Low-Voltage Unipolar Inverters Ieee Transactions On Electron Devices. 63: 1437-1443
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