Anand V. Sampath, Ph.D.
Affiliations: | 2002 | Boston University, Boston, MA, United States |
Area:
Electronics and Electrical Engineering, Materials Science EngineeringGoogle:
"Anand Sampath"Parents
Sign in to add mentor| Theodore D. Moustakas | grad student | 2002 | Boston University | |
| (Hetero- and homo-epitaxial growth of III-nitride based junctions and devices by molecular beam epitaxy.) | ||||
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Publications
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| Sampath AV, Chen Y, Zhou Q, et al. (2016) AlGaN/SiC heterojunction ultraviolet photodiodes Materials Science Forum. 858: 1206-1209 |
| Enck RW, Woodward N, Gallinat C, et al. (2015) Plasma-assisted molecular beam epitaxy of strain-compensated a-plane InGaN/AlGaN superlattices Physica Status Solidi (C) Current Topics in Solid State Physics. 12: 434-438 |
| Sampath AV, Garrett GA, Enck RW, et al. (2011) Suppression of non-radiative effects in AlGaN through nanometer scale compositional inhomogeneities Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 1534-1538 |
| Nikishin S, Borisov B, Kuryatkov V, et al. (2008) Deep UV light emitting diodes grown by gas source molecular beam epitaxy Journal of Materials Science: Materials in Electronics. 19: 764-769 |
| Wraback M, Garrett GA, Sampath AV, et al. (2007) Optimization of nanoscale phenomena in AlGaN for improved UV emitters Proceedings of Spie - the International Society For Optical Engineering. 6479 |
| Garrett GA, Collins CJ, Sampath AV, et al. (2005) Defect density dependence of carrier dynamics in A1GaN multiple quantum wells grown on GaN substrates and templates Physica Status Solidi C: Conferences. 2: 2332-2336 |
| Sampath AV, Bhattacharyya A, Singh R, et al. (2002) Growth and Fabrication of High Reverse Breakdown Heterojunction n-Gan: p-6H-Sic Diodes Mrs Proceedings. 743 |
| Bhattacharyya A, Iyer S, Iliopoulos E, et al. (2002) High reflectivity and crack-free AlGaN/AlN ultraviolet distributed Bragg reflectors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1229-1233 |
| Sampath AV, Bhattacharyya A, Singh R, et al. (2002) Growth and fabrication of high reverse breakdown heterojunction n-GAN: p-6H-SiC diodes Materials Research Society Symposium - Proceedings. 743: 449-454 |
| Moustakas TD, Iliopoulos E, Sampath AV, et al. (2001) Growth and device applications of III-nitrides by MBE Journal of Crystal Growth. 227: 13-20 |