Wen-Teng Chang, Ph.D.
Affiliations: | 2006 | Case Western Reserve University, Cleveland Heights, OH, United States |
Area:
Electronics and Electrical Engineering, Materials Science Engineering, Mechanical EngineeringGoogle:
"Wen-Teng Chang"Parents
Sign in to add mentorChristian A. Zorman | grad student | 2006 | Case Western | |
(Energy dissipation in MEMS-based flexural-mode lateral resonators made from single crystalline and polycrystalline 3C-silicon carbide films.) |
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Publications
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Chang WT, Hsu HJ, Pao PH. (2019) Vertical Field Emission Air-Channel Diodes and Transistors. Micromachines. 10 |
Chang W, Pao P. (2019) Field Electrons Intercepted by Coplanar Gates in Nanoscale Air Channel Ieee Transactions On Electron Devices. 66: 3961-3966 |
Chang W, Shih C, Wu J, et al. (2018) Back-Biasing to Performance and Reliability Evaluation of UTBB FDSOI, Bulk FinFETs, and SOI FinFETs Ieee Transactions On Nanotechnology. 17: 36-40 |
Chang WT, Cin LG, Yeh WK. (2015) Impact of fin width and back bias under hot carrier injection on double-gate FinFETs Ieee Transactions On Device and Materials Reliability. 15: 86-89 |
Chang W, Liang Y. (2015) Geometric Design of Microbolometers Made From CMOS Polycrystalline Silicon Ieee Sensors Journal. 15: 264-268 |
Chang WT, Lin YS, Shih CT. (2015) Threshold voltage and transconductance shifting reliance on strained-SiGe channel dimension Solid-State Electronics. 110: 10-13 |
Chang WT, Chen CW. (2014) Resistance of outmost shell- and embedded-end contacts of single- and multi-bridged carbon nanotubes. Journal of Nanoscience and Nanotechnology. 14: 2663-6 |
Chang W, Lai C, Yeh W. (2014) Reliability of the doping concentration in an ultra-thin body and buried oxide silicon on insulator (SOI) and comparison with a partially depleted SOI Microelectronics Reliability. 54: 485-489 |
Chang W, Lin Y. (2013) Performance Dependence on Width-to-Length Ratio of Si Cap/SiGe Channel MOSFETs Ieee Transactions On Electron Devices. 60: 3663-3668 |
Chang W. (2011) CLAMPING LOSSES OF FOLDED- AND STRAIGHT-BEAM MEMS RESONATORS MADE FROM POLYCRYSTALLINE 3C-SiC FILMS International Journal of Modern Physics B. 25: 885-896 |