Frederick H. Long

Affiliations: 
Rutgers University, New Brunswick, New Brunswick, NJ, United States 
Area:
Physical Chemistry, Materials Science Engineering, Electronics and Electrical Engineering
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Publications

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Pophristic M, Long FH, Tran C, et al. (2000) Time-resolved spectroscopy of InGaN Mrs Internet Journal of Nitride Semiconductor Research. 5
Pophristic M, Long FH, Tran C, et al. (2000) Time-resolved photoluminescence measurements of InGaN light-emitting diodes Materials Science Forum. 338
Pophristic M, Long FH, Tran C, et al. (2000) Time-resolved spectroscopy oflnGaN Materials Research Society Symposium - Proceedings. 595
Burton JC, Long FH, Khlebnikov Y, et al. (2000) Characterization of silicon carbide using Raman spectroscopy Materials Science Forum. 338
Burton JC, Pophristic M, Long FH, et al. (1999) Optical characterization of SiC wafers Materials Research Society Symposium - Proceedings. 572: 201-206
Pophristic M, Long FH, Tran C, et al. (1999) Time-resolved photoluminescence measurements of quantum dots in InGaN multiple quantum wells and light-emitting diodes Journal of Applied Physics. 86: 1114-1118
Long FH, Pophristic M, Tran C, et al. (1999) Time-resolved laser spectroscopy of nitride semiconductors Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 59: 147-149
Burton JC, Sun L, Long FH, et al. (1999) First- And second-order Raman scattering from semi-insulating 4H-SiC Physical Review B - Condensed Matter and Materials Physics. 59: 7282-7284
Pophristic M, Long FH, Schurman M, et al. (1999) Raman microscopy of lateral epitaxial overgrowth of GaN on sapphire Physica Status Solidi (B) Basic Research. 216: 803-806
Burton JC, Long FH, Ferguson IT. (1999) Resonance enhancement of electronic Raman scattering from nitrogen defect levels in silicon carbide Journal of Applied Physics. 86: 2073-2077
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