Frederick H. Long

Affiliations: 
Rutgers University, New Brunswick, United States 
Area:
Physical Chemistry, Materials Science Engineering, Electronics and Electrical Engineering
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Balss KM, Long FH, Veselov V, et al. (2008) Multivariate analysis applied to the study of spatial distributions found in drug-eluting stent coatings by confocal Raman microscopy. Analytical Chemistry. 80: 4853-9
Pophristic M, Long FH, Tran C, et al. (2000) Time-resolved photoluminescence measurements of InGaN light-emitting diodes Materials Science Forum. 338
Pophristic M, Long FH, Tran C, et al. (2000) Time-resolved spectroscopy oflnGaN Materials Research Society Symposium - Proceedings. 595
Pophristic M, Long FH, Tran C, et al. (2000) Time-resolved spectroscopy of InGaN Mrs Internet Journal of Nitride Semiconductor Research. 5
Long FH, Pophristic M, Tran C, et al. (1999) Time-resolved laser spectroscopy of nitride semiconductors Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 59: 147-149
Burton JC, Pophristic M, Long FH, et al. (1999) Optical characterization of SiC wafers Materials Research Society Symposium - Proceedings. 572: 201-206
Pophristic M, Long FH, Schurman M, et al. (1999) Raman microscopy of lateral epitaxial overgrowth of GaN on sapphire Physica Status Solidi (B) Basic Research. 216: 803-806
Burton JC, Long FH, Ferguson IT. (1999) Resonance enhancement of electronic Raman scattering from nitrogen defect levels in silicon carbide Journal of Applied Physics. 86: 2073-2077
Pophristic M, Long FH, Tran C, et al. (1999) Time-resolved photoluminescence measurements of quantum dots in InGaN multiple quantum wells and light-emitting diodes Journal of Applied Physics. 86: 1114-1118
Burton JC, Sun L, Pophristic M, et al. (1998) Spatial characterization of doped SiC wafers by Raman spectroscopy Journal of Applied Physics. 84: 6268-6273
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