Frederick H. Long
Affiliations: | Rutgers University, New Brunswick, New Brunswick, NJ, United States |
Area:
Physical Chemistry, Materials Science Engineering, Electronics and Electrical EngineeringGoogle:
"Frederick Long"Mean distance: (not calculated yet)
Parents
Sign in to add mentorKenneth B. Eisenthal | grad student | 1991 | Columbia |
Basil I. Swanson | post-doc | LANL |
Children
Sign in to add traineeJulian C. Burton | grad student | 2000 | Rutgers, New Brunswick |
Milan Pophristic | grad student | 2000 | Rutgers, New Brunswick |
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Publications
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Pophristic M, Long FH, Tran C, et al. (2000) Time-resolved spectroscopy of InGaN Mrs Internet Journal of Nitride Semiconductor Research. 5 |
Pophristic M, Long FH, Tran C, et al. (2000) Time-resolved photoluminescence measurements of InGaN light-emitting diodes Materials Science Forum. 338 |
Pophristic M, Long FH, Tran C, et al. (2000) Time-resolved spectroscopy oflnGaN Materials Research Society Symposium - Proceedings. 595 |
Burton JC, Long FH, Khlebnikov Y, et al. (2000) Characterization of silicon carbide using Raman spectroscopy Materials Science Forum. 338 |
Burton JC, Pophristic M, Long FH, et al. (1999) Optical characterization of SiC wafers Materials Research Society Symposium - Proceedings. 572: 201-206 |
Pophristic M, Long FH, Tran C, et al. (1999) Time-resolved photoluminescence measurements of quantum dots in InGaN multiple quantum wells and light-emitting diodes Journal of Applied Physics. 86: 1114-1118 |
Long FH, Pophristic M, Tran C, et al. (1999) Time-resolved laser spectroscopy of nitride semiconductors Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 59: 147-149 |
Burton JC, Sun L, Long FH, et al. (1999) First- And second-order Raman scattering from semi-insulating 4H-SiC Physical Review B - Condensed Matter and Materials Physics. 59: 7282-7284 |
Pophristic M, Long FH, Schurman M, et al. (1999) Raman microscopy of lateral epitaxial overgrowth of GaN on sapphire Physica Status Solidi (B) Basic Research. 216: 803-806 |
Burton JC, Long FH, Ferguson IT. (1999) Resonance enhancement of electronic Raman scattering from nitrogen defect levels in silicon carbide Journal of Applied Physics. 86: 2073-2077 |