Milan Pophristic, Ph.D.
Affiliations: | 2000 | Rutgers University, New Brunswick, New Brunswick, NJ, United States |
Area:
Physical Chemistry, Materials Science Engineering, Electronics and Electrical EngineeringGoogle:
"Milan Pophristic"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| Frederick H. Long | grad student | 2000 | Rutgers, New Brunswick | |
| (Optical characterization of indium gallium nitride-based semiconductor structures.) | ||||
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| Liu L, Zhu TG, Murphy M, et al. (2009) 600V GaN schottky barrier power devices for high volume and low cost applications Materials Science Forum. 600: 1251-1256 |
| Campo EM, Cargill GS, Pophristic M, et al. (2004) Electron Beam Bombardment Induced Decrease of Cathodoluminescence Intensity from GaN Not Caused by Absorption in Buildup of Carbon Contamination Mrs Internet Journal of Nitride Semiconductor Research. 9 |
| Lee J, Eliseev PG, Osinski M, et al. (2003) InGaN-based ultraviolet emitting heterostructures with quaternary AlInGaN barriers Ieee Journal of Selected Topics in Quantum Electronics. 9: 1239-1245 |
| Pattada B, Chen J, Manasreh MO, et al. (2003) Phonon modes of GaN/AIN heterojunction field-effect transistor structures grown on Si(111) substrates Journal of Applied Physics. 93: 5824-5826 |
| Guo SP, Pophristic M, Peres B, et al. (2003) Quaternary InAlGaN-based multi-quantum wells for ultraviolet light emitting diodes grown by metalorganic chemical vapor deposition Journal of Crystal Growth. 252: 486-492 |
| Lee J, Eliseev PG, Osinski M, et al. (2003) High-temperature properties of InGaN/AlInGaN-based quantum-well IV LEDs in 300-600 K range Osa Trends in Optics and Photonics Series. 88: 357-358 |
| Kang H, Spencer N, Nicol D, et al. (2002) X-ray diffraction analysis of GaN and AlGaN Materials Research Society Symposium - Proceedings. 743: 405-410 |
| Hull BA, Mohney SE, Chowdhury U, et al. (2002) Contacts to High Aluminum Fraction p-type Aluminum Gallium Nitride Mrs Proceedings. 743 |
| Guo S, Pophristic M, Ferguson I, et al. (2002) Growth of high Al concentration AlGaN for solar blind photodetector applications Materials Research Society Symposium - Proceedings. 693: 665-670 |
| Guo S, Pophristic M, Lee DS, et al. (2002) Quaternary InAlGaN-based multi-quantum wells for ultraviolet light emitting diode application Proceedings of Spie - the International Society For Optical Engineering. 4776: 18-25 |