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Iain R. McNab

Applied Science and Technology guangdong technion israel institute of technology 
chemistry, physics, spectroscopy, surface chemistry
"Iain McNab"

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Guo SY, Ebrahimi M, McNab IR, et al. (2016) Charge-Transfer in Silicon Governs the Pattern of Dissociative Attachment of Hydrogen Halides: HCl, HBr, and HI Journal of Physical Chemistry C. 120: 22414-22420
Huang K, McNab IR, Polanyi JC, et al. (2012) Adsorbate alignment in surface halogenation: standing up is better than lying down. Angewandte Chemie (International Ed. in English). 51: 9061-5
Ebrahimi M, Guo SY, Huang K, et al. (2012) Effect of alkyl chain-length on dissociative attachment: 1-bromoalkanes on Si(100)-c(4×2) Journal of Physical Chemistry C. 116: 10129-10137
Eisenstein A, Harikumar KR, Huang K, et al. (2012) Pulsed-dosing controls self-assembly: 1-Bromopentane on Si(1 1 1)-7 × 7 Chemical Physics Letters. 527: 1-6
Harikumar KR, McNab IR, Polanyi JC, et al. (2011) Stereo-isomerism controls surface reactivity: 1-chloropentane-pairs on Si(100)-2×1. Chemical Communications (Cambridge, England). 47: 12101-3
Ebrahimi M, Huang K, Lu X, et al. (2011) Facile charge-displacement at silicon gives spaced-out reaction. Journal of the American Chemical Society. 133: 16560-5
Lim TB, McNab IR, Polanyi JC, et al. (2011) Multiple pathways of dissociative attachment: CH3Br on Si(100)-2×1. Journal of the American Chemical Society. 133: 11534-9
Harikumar KR, McNab IR, Polanyi JC, et al. (2011) Imprinting self-assembled patterns of lines at a semiconductor surface, using heat, light, or electrons. Proceedings of the National Academy of Sciences of the United States of America. 108: 950-5
McNab IR, Polanyi JC. (2011) Imprinting atomic and molecular patterns Frontiers of Nanoscience. 2: 79-120
Ebrahimi M, Guo SY, McNab IR, et al. (2010) Early; And "late" barriers in dissociative attachment: Steering surface reaction Journal of Physical Chemistry Letters. 1: 2600-2605
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