Fritz Feigl, PhD

Affiliations: 
Vienna University, Austria 
Area:
Chemistry
Website:
http://www.scs.illinois.edu/~mainzv/HIST/bulletin_open_access/num17-18/num17-18%20p31-39.pdf
Google:
"Fritz Feigl"
Bio:

http://de.wikipedia.org/wiki/Fritz_Feigl
http://www.uni-kiel.de/anorg/lagaly/group/klausSchiver/Feigl.pdf
http://dx.doi.org/10.1590/S0100-40422004000100029
http://en.wikipedia.org/wiki/Fritz_Feigl
http://www.chemistry.org.il/booklet/10/pdf/fritz.pdf

(Note: http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0100-40422004000100029&lng=pt&nrm=iso&tlng=pt , http://www.scs.illinois.edu/~mainzv/HIST/bulletin_open_access/num17-18/num17-18%20p31-39.pdf
incorrectly state that Späth was Feigl's PhD advisor. Späth was his Habilitation advisor though)

Private Info provide by Dr. phil. Juliane Mikoletzky
Technische Universität Wien
Universitätsarchiv

"Fritz Feigl has conducted the research on his thesis at the II. Chem. Universitäts-Laboratorium of Vienna University, headed at that time by Wilhelm Schlenk. Feigl worked there as assistant since the end of the war.

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Mean distance: 8.52
 
SNBCP

Parents

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Wilhelm Schlenk grad student 1920 University of Vienna
 (Über die Verwendung von Tüpfelreaktionen in der qualitativen Analyse)
Ernst Späth post-doc 1927 University of Vienna
 (Habilitation)
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Publications

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Trombetta LP, Feigl FJ, Zeto RJ. (1991) Positive charge generation in metal-oxide-semiconductor capacitors Journal of Applied Physics. 69: 2512-2521
Fowler WB, Rudra JK, Zvanut ME, et al. (1990) Hysteresis and Franck-Condon relaxation in insulator-semiconductor tunneling. Physical Review. B, Condensed Matter. 41: 8313-8317
Dutt DA, Feigl FJ, DeLeo GG. (1990) Optical absorption and electron paramagnetic resonance studies of chemically reduced congruent lithium niobate Journal of Physics and Chemistry of Solids. 51: 407-415
Zvanut ME, Feigl FJ, Fowler WB, et al. (1989) Rechargeable E' centers in sputter-deposited silicon dioxide films Applied Physics Letters. 54: 2118-2120
Edwards AH, Fowler WB, Feigl FJ. (1988) Asymmetrical relaxation of simple E' centers in silicon dioxide isomorphs. Physical Review. B, Condensed Matter. 37: 9000-9005
Edwards AH, Fowler WB, Feigl FJ. (1988) Asymmetrical relaxation of simple E centers in silicon dioxide isomorphs Physical Review B. 37: 9000-9005
Zvanut ME, Feigl FJ, Zook JD. (1988) A defect relaxation model for bias instabilities in metal-oxide- semiconductor capacitors Journal of Applied Physics. 64: 2221-2223
Trombetta LP, Zeto RJ, Feigl FJ. (1987) Analysis of the feedback voltage during constant current avalanche hole injection experiments Journal of Applied Physics. 62: 1913-1919
Feigl FJ. (1986) VLSI Technology and Dielectric Film Science Physics Today. 39: 47-54
Sheu YD, Butler SR, Feigl FJ, et al. (1986) DISTRIBUTION OF Cl IMPURITIES IN SiO//2 FILMS PRODUCED BY THERMAL OXIDATION OF Si IN Cl-CONTAINING AMBIENTS. Journal of the Electrochemical Society. 133: 2136-2140
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