Rotem Har-Lavan, Ph.D.
Affiliations: | 2011 | Weizmann Institute of Science, Rehovot, Israel |
Area:
General EngineeringGoogle:
"Rotem Har-Lavan"Mean distance: (not calculated yet)
Parents
Sign in to add mentorDavid Cahen | grad student | 2011 | Weizmann Institute | |
(Molecular Monolayers for Hybrid n-Si / organic Inversion Layer Solar Cells.) |
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Publications
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Lovrinčić R, Kraynis O, Har-Lavan R, et al. (2013) A New Route to Nondestructive Top-Contacts for Molecular Electronics on Si: Pb Evaporated on Organic Monolayers. The Journal of Physical Chemistry Letters. 4: 426-30 |
Yaffe O, Ely T, Har-Lavan R, et al. (2013) Effect of Molecule-Surface Reaction Mechanism on the Electronic Characteristics and Photovoltaic Performance of Molecularly Modified Si. The Journal of Physical Chemistry. C, Nanomaterials and Interfaces. 117: 22351-22361 |
Har-Lavan R, Cahen D. (2013) 40 years of inversion layer solar cells: From MOS to conducting polymer/inorganic hybrids Ieee Journal of Photovoltaics. 3: 1443-1459 |
Har-Lavan R, Schreiber R, Yaffe O, et al. (2013) Molecular field effect passivation: Quinhydrone/methanol treatment of n-Si(100) Journal of Applied Physics. 113 |
Shpaisman H, Cohen H, Har-Lavan R, et al. (2012) A novel method for investigating electrical breakdown enhancement by nm-sized features. Nanoscale. 4: 3128-34 |
Har-Lavan R, Yaffe O, Joshi P, et al. (2012) Ambient organic molecular passivation of Si yields near-ideal, Schottky-Mott limited, junctions Aip Advances. 2 |
Har-Lavan R, Joshi P, Yaffe O, et al. (2011) Hybrid, chemically passivated n-type silicon/PEDOT:PSS semiconductor- insulator-semiconductor solar cell Conference Record of the Ieee Photovoltaic Specialists Conference. 002492-002496 |
Shpaisman H, Har-Lavan R, Stein N, et al. (2010) Electronic contact deposition onto organic molecular monolayers: Can we detect metal penetration? Advanced Functional Materials. 20: 2181-2188 |
Har-Lavan R, Ron I, Thieblemont F, et al. (2009) Toward metal-organic insulator-semiconductor solar cells, based on molecular monolayer self-assembly on n-Si Applied Physics Letters. 94: 043308 |