Kyu-Pil Lee, Ph.D.
Affiliations: | 2003 | University of Florida, Gainesville, Gainesville, FL, United States |
Area:
Materials Science Engineering, Electronics and Electrical EngineeringGoogle:
"Kyu-Pil Lee"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| Stephen J. Pearton | grad student | 2003 | UF Gainesville | |
| (Design and fabrication of gallium nitride-based heterojunction bipolar transistors.) | ||||
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Publications
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| Ip K, Nigam S, Lee KP, et al. (2002) Effects of Ar inductively coupled plasma exposure on 4H-SiC Schottky rectifiers Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20: 2299 |
| Lee KP, Pearton SJ, Overberg ME, et al. (2002) Magnetic effects of direct ion implantation of Mn and Fe into p-GaN Journal of Electronic Materials. 31: 411-415 |
| Theodoropoulou N, Lee KP, Overberg ME, et al. (2001) Nanoscale magnetic regions formed in GaN implanted with Mn. Journal of Nanoscience and Nanotechnology. 1: 101-6 |
| Luo B, Kim J, Mehandru R, et al. (2001) Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes Mrs Proceedings. 693 |
| Monier C, Ren F, Han J, et al. (2001) Simulation of npn and pnp AlGaN/GaN heterojunction bipolar transistors performances: limiting factors and optimum design Ieee Transactions On Electron Devices. 48: 427-432 |
| Zhan AP, Dang GT, Ren F, et al. (2001) Comparison of GaN p-i-n and Schottky rectifier performance Ieee Transactions On Electron Devices. 48: 407-411 |
| Kent D, Lee K, Zhang A, et al. (2001) Electrical effects of N2 plasma exposure on dry-etch damage in p- and n-GaN Schottky diodes Solid-State Electronics. 45: 1837-1842 |
| Luo B, Ren F, Lee K, et al. (2001) Comparison of the effects of H2 and D2 plasma exposure on GaAs MESFETs Solid-State Electronics. 45: 1625-1638 |
| Luo B, Ren F, Lee K, et al. (2001) Comparison of the effects of H2 and D2 plasma exposure on AlGaAs/GaAs high electron mobility transistors Solid-State Electronics. 45: 1613-1624 |
| Kent D, Lee K, Zhang A, et al. (2001) Effect of N2 plasma treatments on dry etch damage in n- and p-type GaN Solid-State Electronics. 45: 467-470 |