Wantae Lim, Ph.D.
Affiliations: | 2009 | University of Florida, Gainesville, Gainesville, FL, United States |
Area:
Materials Science Engineering, Electronics and Electrical Engineering, Chemical EngineeringGoogle:
"Wantae Lim"Mean distance: (not calculated yet)
Parents
Sign in to add mentorStephen J. Pearton | grad student | 2009 | UF Gainesville | |
(Fabrication and characterization of oxide-based thin film transistors, and process development for oxide heterostructures.) |
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Publications
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Baik KH, Lim W, Pearton S, et al. (2019) a-Plane GaN for Hydrogen Sensing Applications Ecs Transactions. 28: 89-93 |
Lim W, Wang Y, Lee J, et al. (2019) High Performacne InGaZnO4-based Thin film Transistors Fabricated at Low Temperature Ecs Transactions. 16: 303-308 |
Lim W, Stafford L, Gila B, et al. (2019) High Density Inductively Coupled Plasma Etching of Zinc-Oxide(ZnO) and Indium-Zinc Oxide(IZO) Ecs Transactions. 6: 239-247 |
Leem YC, Seo O, Jo YR, et al. (2016) Titanium oxide nanotube arrays for high light extraction efficiency of GaN-based vertical light-emitting diodes. Nanoscale |
Leem YC, Park JS, Kim JH, et al. (2016) Light-Emitting Diodes: Light-Emitting Diodes with Hierarchical and Multifunctional Surface Structures for High Light Extraction and an Antifouling Effect (Small 2/2016). Small (Weinheim An Der Bergstrasse, Germany). 12: 138 |
Lim W, Kum H, Choi YJ, et al. (2016) SiO |
Leem YC, Kim NY, Lim W, et al. (2014) Enhanced optical output power of InGaN/GaN vertical light-emitting diodes by ZnO nanorods on plasma-treated N-face GaN. Nanoscale. 6: 10187-92 |
Cho C, Kim N, Kang J, et al. (2013) Improved Light Extraction Efficiency in Blue Light-Emitting Diodes by SiO2-Coated ZnO Nanorod Arrays Applied Physics Express. 6: 42102 |
Song J, Leem Y, Park Y, et al. (2013) Light extraction efficiency of GaN-based LEDs with non-periodic and periodic sub-wavelength structures Journal of the Korean Physical Society. 62: 770-774 |
Lim W, Sung Y, Kim S, et al. (2013) Effect of oxygen plasma treatment on nonalloyed Al/Ti-based contact for high power InGaN/GaN vertical light-emitting diodes Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31: 010602 |