Erica A. Douglas, Ph.D.
Affiliations: | 2011 | University of Florida, Gainesville, Gainesville, FL, United States |
Area:
Electronics and Electrical Engineering, Solid State PhysicsGoogle:
"Erica Douglas"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| Stephen J. Pearton | grad student | 2011 | UF Gainesville | |
| (Characterization and reliability of aluminum gallium nitride/gallium nitride high electron mobility transistors.) | ||||
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Publications
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| CareyIV PH, Ren F, Armstrong AM, et al. (2020) High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 38: 33202 |
| Pearton SJ, Douglas EA, Shul RJ, et al. (2020) Plasma etching of wide bandgap and ultrawide bandgap semiconductors Journal of Vacuum Science & Technology A. 38: 020802 |
| Baca AG, Armstrong AM, Klein BA, et al. (2020) Al-rich AlGaN based transistors Journal of Vacuum Science and Technology. 38: 20803 |
| Reza S, Klein BA, Baca AG, et al. (2019) High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study Japanese Journal of Applied Physics. 58: SCCD04 |
| Armstrong AM, Klein BA, Allerman AA, et al. (2019) Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with a nanodot-based floating gate Photonics Research. 7: B24 |
| Kang T, Lo C, Liu L, et al. (2019) Thermal Simulation of 193 nm UV-Laser Lift-Off AlGaN/GaN High Electron Mobility Transistors Mounted on AlN Substrates Ecs Transactions. 41: 129-136 |
| Douglas EA, Klein B, Allerman AA, et al. (2019) Enhancement-mode AlGaN channel high electron mobility transistor enabled by p-AlGaN gate Journal of Vacuum Science & Technology B. 37: 021208 |
| Esteves G, Berg M, Wrasman KD, et al. (2019) CMOS compatible metal stacks for suppression of secondary grains in Sc0.125Al0.875N Journal of Vacuum Science and Technology. 37: 21511 |
| Carey PH, Pearton SJ, Ren F, et al. (2019) Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors Ieee Transactions On Semiconductor Manufacturing. 32: 473-477 |
| Martinez MJ, King MP, Baca AG, et al. (2019) Radiation Response of AlGaN-Channel HEMTs Ieee Transactions On Nuclear Science. 66: 344-351 |