Serge Rigo, Ph.D.
Affiliations: | Physics | Université Paris Diderot - Paris 7, Paris, Île-de-France, France |
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"Serge Rigo"Mean distance: 19906.5
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| De Almeida RMC, Baumvol IJR, Ganem JJ, et al. (2004) Thermal growth of silicon oxynitride films on Si: A reaction-diffusion approach Journal of Applied Physics. 95: 1770-1773 |
| Trimaille I, Ganem JJ, Vickridge IC, et al. (2004) Thermal oxidation of 6H-SiC studied by oxygen isotopic tracing and narrow nuclear resonance profiling Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 219: 914-918 |
| Vickridge IC, Trimaille I, Ganem JJ, et al. (2002) Limiting step involved in the thermal growth of silicon oxide films on silicon carbide. Physical Review Letters. 89: 256102 |
| Trimaille I, Ganem JJ, Gösset LG, et al. (2000) Furnace oxynitridation in nitric oxide of thin silicon oxide: Atomic transport mechanisms and interfacial microstructure Materials Research Society Symposium - Proceedings. 592: 269-274 |
| Åkermark T, Gosset LG, Ganem JJ, et al. (1999) Loss of oxygen at the Si-SiO2 interface during dry oxidation of silicon Journal of the Electrochemical Society. 146: 3389-3392 |
| Åkermark T, Ganem JJ, Trimaille I, et al. (1999) Temperature and Pressure Dependence of the Oxygen Exchange at the SiO2-Si Interface, O2 ↔ SiO2, during Dry Thermal Oxidation of Silicon Journal of Physical Chemistry B. 103: 9910-9914 |
| Åkermark T, Gosset LG, Ganem JJ, et al. (1999) Time dependence of the oxygen exchange O2↔SiO2 at the SiO2-Si interface during dry thermal oxidation of silicon Journal of Applied Physics. 86: 1153-1155 |
| Baumvol IJR, Ganem JJ, Gosset LG, et al. (1998) Incorporation of oxygen and nitrogen in ultrathin films of SiO2 annealed in NO Applied Physics Letters. 72: 2999-3001 |
| Gosset LG, Ganem JJ, Trimaille I, et al. (1998) High resolution depth profiling in silicon oxynitride films using narrow nuclear reaction resonances Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 136: 521-527 |
| Ganem JJ, Trimaille I, André P, et al. (1997) Diffusion of near surface defects during the thermal oxidation of silicon Journal of Applied Physics. 81: 8109-8111 |