Antonio Facchetti

Affiliations: 
Chemsitry Northwestern University, Evanston, IL 
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"Antonio Facchetti"
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Children

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Binghao Wang grad student 2014-2016 Northwestern
Binghao Wang post-doc 2017- Northwestern

Collaborators

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Peijun Guo collaborator
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Publications

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Kim J, Park JB, Zheng D, et al. (2022) Readily Accessible Metallic Micro Island Arrays for High-Performance Metal Oxide Thin-Film Transistors. Advanced Materials (Deerfield Beach, Fla.). e2205871
Chen Y, Wu J, Lu S, et al. (2022) Semiconducting Copolymers with Naphthalene Imide/Amide π-Conjugated Units: Synthesis, Crystallography, and Systematic Structure-Property-Mobility Correlations. Angewandte Chemie (International Ed. in English)
Chen J, Huang W, Zheng D, et al. (2022) Highly stretchable organic electrochemical transistors with strain-resistant performance. Nature Materials. 21: 564-571
Sil A, Goldfine EA, Huang W, et al. (2022) Role of Fluoride Doping in Low-Temperature Combustion-Synthesized ZrO Dielectric Films. Acs Applied Materials & Interfaces
Wang B, Huang W, Bedzyk MJ, et al. (2022) Combustion Synthesis and Polymer Doping of Metal Oxides for High-Performance Electronic Circuitry. Accounts of Chemical Research
Guo H, Yang CY, Zhang X, et al. (2021) Transition metal-catalysed molecular n-doping of organic semiconductors. Nature. 599: 67-73
Yao Y, Huang W, Chen J, et al. (2021) Flexible complementary circuits operating at sub-0.5 V via hybrid organic-inorganic electrolyte-gated transistors. Proceedings of the National Academy of Sciences of the United States of America. 118
Kim J, Jo C, Kim MG, et al. (2021) Vertically Stacked Full Color Quantum Dots Phototransistor Arrays for High-Resolution and Enhanced Color-Selective Imaging. Advanced Materials (Deerfield Beach, Fla.). e2106215
Royakkers J, Guo K, Toolan DTW, et al. (2021) Molecular Encapsulation of Naphthalene Diimide (NDI) Based π-Conjugated Polymers: A Tool for Understanding Photoluminescence. Angewandte Chemie (International Ed. in English)
Wang G, Zhuang X, Huang W, et al. (2021) New Opportunities for High-Performance Source-Gated Transistors Using Unconventional Materials. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). e2101473
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