Nicholas C. Strandwitz, Ph.D.
Affiliations: | Materials Science and Engineering | Lehigh University, Bethlehem, PA, United States |
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Parents
Sign in to add mentorGalen Dean Stucky | grad student | 2004-2009 | UC Santa Barbara | |
(Catalysis with nanostructured solution-processed materials.) | ||||
Nathan Saul Lewis | post-doc | 2009-2012 | Caltech |
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Publications
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Xiong K, Zhang X, Li L, et al. (2020) Temperature-Dependent RF Characteristics of Al₂O₃-Passivated WSe₂ MOSFETs Ieee Electron Device Letters. 41: 1134-1137 |
Davis BE, Strandwitz NC. (2020) Aluminum Oxide Passivating Tunneling Interlayers for Molybdenum Oxide Hole-Selective Contacts Ieee Journal of Photovoltaics. 10: 722-728 |
Ogidi-Ekoko ON, Goodrich JC, Howzen AJ, et al. (2020) Electrical Properties of MgO/GaN Metal-Oxide-Semiconductor Structures Solid-State Electronics. 107881 |
Goodrich JC, Farinha TG, Ju L, et al. (2020) Surface pretreatment and deposition temperature dependence of MgO epitaxy on GaN by thermal atomic layer deposition Journal of Crystal Growth. 536: 125568 |
Kozen AC, Sowa MJ, Ju L, et al. (2019) Plasma-enhanced atomic layer deposition of vanadium nitride Journal of Vacuum Science & Technology A. 37: 061505 |
Ju L, Vemuri V, Strandwitz NC. (2019) Quartz crystal microbalance study of precursor diffusion during molecular layer deposition using cyclic azasilane, maleic anhydride, and water Journal of Vacuum Science and Technology. 37: 30909 |
Sowa MJ, Ju L, Kozen AC, et al. (2018) Plasma-enhanced atomic layer deposition of titanium vanadium nitride Journal of Vacuum Science & Technology A. 36: 06A103 |
Li L, Xiong K, Marstell RJ, et al. (2018) Wafer-Scale Fabrication of Recessed-Channel PtSe2 MOSFETs With Low Contact Resistance and Improved Gate Control Ieee Transactions On Electron Devices. 65: 4102-4108 |
Xiong K, Kim H, Marstell RJ, et al. (2018) CMOS-compatible batch processing of monolayer MoS2MOSFETs Journal of Physics D: Applied Physics. 51: 15LT02 |
Marstell RJ, Pugliese A, Strandwitz NC. (2018) Absence of Evidence for Fixed Charge in Metal-Aluminum Oxide-Silicon Tunnel Diodes Physica Status Solidi (B). 256: 1800342 |