Eric C. Johlin, Ph.D.
Affiliations: | Univerisity of Western Ontario, London, Ontario, Canada |
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Parents
Sign in to add mentorAnthony G. Buonassisi | grad student | 2005-2009 | MIT (Physics Tree) |
Jeffrey C. Grossman | grad student | 2005-2009 | MIT |
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Publications
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Adhyaksa GWP, Johlin E, Garnett EC. (2017) Nanoscale back contact perovskite solar cell design for improved tandem efficiency. Nano Letters |
Johlin E, Solari J, Mann SA, et al. (2016) Super-resolution imaging of light-matter interactions near single semiconductor nanowires. Nature Communications. 7: 13950 |
Johlin E, Al-Obeidi A, Nogay G, et al. (2016) Nanohole Structuring for Improved Performance of Hydrogenated Amorphous Silicon Photovoltaics. Acs Applied Materials & Interfaces |
Chavali RVK, Johlin EC, Gray JL, et al. (2016) A Framework for Process-to-Module Modeling of a-Si/c-Si (HIT) Heterojunction Solar Cells to Investigate the Cell-to-Module Efficiency Gap Ieee Journal of Photovoltaics. 6: 875-887 |
Strubbe DA, Johlin EC, Kirkpatrick TR, et al. (2015) Stress effects on the Raman spectrum of an amorphous material: Theory and experiment on a -Si:H Physical Review B - Condensed Matter and Materials Physics. 92 |
Mailoa JP, Bailie CD, Johlin EC, et al. (2015) A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction Applied Physics Letters. 106 |
Raghunathan R, Johlin E, Grossman JC. (2014) Grain boundary engineering for improved thin silicon photovoltaics. Nano Letters. 14: 4943-50 |
Johlin E, Simmons CB, Buonassisi T, et al. (2014) Hole-mobility-limiting atomic structures in hydrogenated amorphous silicon Physical Review B - Condensed Matter and Materials Physics. 90 |
Mueller T, Johlin E, Grossman JC. (2014) Origins of hole traps in hydrogenated nanocrystalline and amorphous silicon revealed through machine learning Physical Review B - Condensed Matter and Materials Physics. 89 |
Johlin E, Wagner LK, Buonassisi T, et al. (2013) Origins of structural hole traps in hydrogenated amorphous silicon. Physical Review Letters. 110: 146805 |