John J. Kelly
Affiliations: | Utrecht University, Utrecht, Netherlands |
Website:
https://www.uu.nl/staff/JJKelly/Google:
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Publications
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| Dorp DHv, Vanheusden G, Paulussen K, et al. (2020) Photoanodic oxidation of InP in acid solution and its surface chemistry: on the interplay of photons, protons and hydrodynamics Electrochimica Acta. 360: 136872 |
| Dorp DHv, Arnauts S, Laitinen M, et al. (2019) Nanoscale etching of III-V semiconductors in acidic hydrogen peroxide solution: GaAs and InP, a striking contrast in surface chemistry Applied Surface Science. 465: 596-606 |
| Dorp DHv, Arnauts S, Laitinen M, et al. (2018) Nanoscale Etching of GaAs and InP in Acidic H2O2 Solution: A Striking Contrast in Kinetics and Surface Chemistry Solid State Phenomena. 282: 48-51 |
| Philipsen HGG, Ozanam F, Allongue P, et al. (2016) Oxide Formation and Dissolution on Silicon in KOH Electrolyte: An In-Situ Infrared Study Journal of the Electrochemical Society. 163: H327-H338 |
| Philipsen HGG, Ozanam F, Allongue P, et al. (2016) In-situ infrared study of silicon in KOH electrolyte: Surface hydrogenation and hydrogen penetration Surface Science. 644: 180-190 |
| Weyher JL, Van Dorp DH, Kelly JJ. (2015) Principles of electroless photoetching of non-uniformly doped GaN: Kinetics and defect revealing Journal of Crystal Growth. 430: 21-27 |
| Van Dorp DH, Arnauts S, Cuypers D, et al. (2014) Nanoscale etching of In0.53Ga0.47As in H 2O2/HCl solutions for advanced CMOS processing Ecs Journal of Solid State Science and Technology. 3 |
| Smeenk NJ, Engel J, Mulder P, et al. (2013) Arsenic formation on GaAs during etching in HF solutions: Relevance for the epitaxial lift-off process Ecs Journal of Solid State Science and Technology. 2 |
| Weyher JL, Tichelaar FD, Van Dorp DH, et al. (2010) The K |
| Van Dorp DH, Weyher JL, Kooijman MR, et al. (2009) Photoetching mechanisms of GaN in alkaline S |