Bin Chen

Shanghai Jiao Tong University, Shanghai, Shanghai Shi, China 
Ultrafast dynamics; Electron microscopy; Semiconductors; Defects
"Bin Chen"
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Zhu C, Lv K, Chen B. (2020) On the S-phase precipitates in 2024 aluminum alloy: An atomic-scale investigation using high-angle annular dark-field scanning transmission electron microscopy Journal of Materials Research. 35: 1582-1589
Zhou L, Zheng J, Wang X, et al. (2020) Study on the precipitates in various aging stages and composite strengthening effect of precipitates and long-period stacking ordered structure of Mg–Gd–Y–Ni alloy Journal of Materials Research. 35: 172-184
Wang S, Dong L, Han X, et al. (2020) Orientations and interfaces between α′-Al13Cr4Si4 and the matrix in Al-Si-Cr-Mg alloy Materials Characterization. 160: 110096
Yu L, Chen X, Wang S, et al. (2019) Atomic-scale observation of β′ and LPSO phase in Mg–Y–Ni alloy by HAADF-STEM Journal of Materials Research. 34: 3545-3553
Lv K, Zhu C, Zheng J, et al. (2019) Precipitation of T1 phase in 2198 Al─Li alloy studied by atomic-resolution HAADF-STEM Journal of Materials Research. 34: 3535-3544
Zheng JK, Zhu C, Li Z, et al. (2019) On the strengthening precipitate structures in Mg-Gd-Ag alloy: An atomic-resolution investigation using Cs-corrected STEM Materials Letters. 238: 66-69
Zhu C, Zhou L, Zheng J, et al. (2019) Cluster on interface of LPSO phase and matrix in Mg-Gd-Y-Ni alloy: Atomic scale insight from HAADF-STEM Materials Letters. 235: 71-75
Liu Z, Pei Z, Chen B, et al. (2019) Unexpected capture of Guinier-Preston zone and γ″ phase in as-cast Mg-Gd-Y-Zn-Ni-Mn alloy: Atomic-scale insights Materials Characterization. 153: 103-107
Wang Z, Lv K, Zheng JK, et al. (2019) Atomic-scale characterization of interfaces between 2A70 aluminum alloy matrix and Cu-enriched layer after electropolishing Materials Characterization. 150: 150-154
Shi X, Li Y, Zeng X, et al. (2019) Deformation mechanism and dynamic precipitation in a Mg-7Al-2Sn alloy processed by surface mechanical attrition treatment Journal of Materials Science & Technology. 35: 1473-1478
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