Jihyun Kim
Affiliations: | 2004 | Chemical Engineering | University of Florida, Gainesville, Gainesville, FL, United States |
| 2004-2006 | U.S. Naval Research Laboratory, Washington, DC, United States | ||
| 2006- | Chemical Engineering | Korea University, Seoul, South Korea |
Website:
https://www.cpcl.korea.ac.kr/Google:
"Jihyun Kim"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| Fan Ren | grad student | 2004 | UF Gainesville | |
| (Wide bandgap semiconductor design, processing, and characterization) | ||||
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Publications
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| Lee G, Baek JH, Ren F, et al. (2021) Artificial Neuron and Synapse Devices Based on 2D Materials. Small (Weinheim An Der Bergstrasse, Germany). e2100640 |
| Lee G, Oh S, Kim J, et al. (2020) Ambipolar charge transport in two-dimensional WS metal-insulator-semiconductor and metal-insulator-semiconductor field-effect transistors. Acs Applied Materials & Interfaces |
| Kim M, Kim Y, Kim J, et al. (2020) BCl3-Based Dry Etching of Exfoliated (100) ß-Ga2O3 Flakes Ecs Journal of Solid State Science and Technology. 9: 75001 |
| Carey PH, Ren F, Bae J, et al. (2020) Alpha Particle Irradiation of High Aluminum Content AlGan Polarization Doped Field Effect Transistors Ecs Journal of Solid State Science and Technology. 9: 35008 |
| Carey PH, Ren F, Bae J, et al. (2020) Proton Irradiation of High Aluminum Content AlGaN Polarization Doped Field Effect Transistors Ecs Journal of Solid State Science and Technology. 9: 25003 |
| Yang S, Lee G, Kim J, et al. (2020) An in-plane WSe2 p–n homojunction two-dimensional diode by laser-induced doping Journal of Materials Chemistry C. 8: 8393-8398 |
| Bae J, Kim HW, Kang IH, et al. (2020) Dual-field plated β-Ga2O3 nano-FETs with an off-state breakdown voltage exceeding 400 v Journal of Materials Chemistry C. 8: 2687-2692 |
| Kim J, Kim H, Lee D, et al. (2020) BEOL-compatible synthesis of multi-layer graphene by carbon ion implantation on cobalt thin films Applied Surface Science. 524: 146537 |
| Choi Y, Choi R, Kim J. (2020) Selective electrochemical etching of epitaxial aluminum nitride thin film Applied Surface Science. 509: 145279 |
| Kwon J, Shin Y, Kwon H, et al. (2019) All-2D ReS transistors with split gates for logic circuitry. Scientific Reports. 9: 10354 |