Feng Wu
Affiliations: | Ben Gurion University, Safed, North District, Israel |
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| Ewing JJ, Lynsky C, Wong MS, et al. (2023) High external quantum efficiency (6.5%) InGaN V-defect LEDs at 600 nm on patterned sapphire substrates. Optics Express. 31: 41351-41360 |
| Khoury M, Li H, Bonef B, et al. (2020) 560 nm InGaN micro-LEDs on low-defect-density and scalable (20-21) semipolar GaN on patterned sapphire substrates. Optics Express. 28: 18150-18159 |
| Khoury M, Li H, Zhang H, et al. (2019) Demonstration of Electrically Injected Semipolar Laser Diode Grown on Low Cost and Scalable Sapphire Substrates. Acs Applied Materials & Interfaces |
| Saifaddin BK, Iza M, Foronda H, et al. (2019) Impact of roughening density on the light extraction efficiency of thin-film flip-chip ultraviolet LEDs grown on SiC. Optics Express. 27: A1074-A1083 |
| Kamikawa T, Gandrothula S, Araki M, et al. (2019) Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate. Optics Express. 27: 24717-24723 |
| Alhassan AI, Young NG, Farrell RM, et al. (2018) Development of high performance green c-plane III-nitride light-emitting diodes. Optics Express. 26: 5591-5601 |
| Alhassan AI, Farrell RM, Saifaddin B, et al. (2016) High luminous efficacy green light-emitting diodes with AlGaN cap layer. Optics Express. 24: 17868-17873 |
| Hashimoto T, Wu F, Speck JS, et al. (2007) A GaN bulk crystal with improved structural quality grown by the ammonothermal method. Nature Materials. 6: 568-71 |
| Golan Y, Fini P, Dahan D, et al. (2003) High-quality GaN on intentionally roughened c-sapphire Epj Applied Physics. 22: 11-14 |
| Wu F, Zamir S, Meyler B, et al. (2003) Microstructure of GaN grown by lateral confined epitaxy 2. GaN on patterned sapphire Journal of Electronic Materials. 32: 23-28 |