N. JOHN DINARDO
Affiliations: | 1987-1991 | Physics | Drexel University, Philadelphia, PA, United States |
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"N. DINARDO"Mean distance: 14.42 | S | N | B | C | P |
Children
Sign in to add trainee| Edgardo Garcia-Berrios | research assistant | Drexel (Chemistry Tree) | |
| Carl Ventrice Jr. | grad student | 1987-1991 | Drexel |
| Rajarshi Banerjee | grad student | 2001 | Drexel |
| Karpagam Aravindhan | grad student | 2005 | Drexel |
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Publications
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| Aravindhan K, Webb CL, Jaye M, et al. (2006) Assessing the effects of LXR agonists on cellular cholesterol handling: a stable isotope tracer study. Journal of Lipid Research. 47: 1250-60 |
| Thibado PM, Mercer TW, Fu S, et al. (1996) Cross-sectional scanning tunneling spectroscopy of cleaved, silicon-based metal-oxide-semiconductor junctions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 1607-1610 |
| Swanston DM, McLean AB, McIlroy DN, et al. (1994) Surface localized states on InAs(110) Surface Science. 312: 361-368 |
| McIlroy DN, Heskett D, McLean AB, et al. (1993) Electronic band structure of the two-dimensional surface-state bands of the (1 x 1) and (1 x 2) phases of Bi/GaSb(110). Physical Review. B, Condensed Matter. 48: 11897-11904 |
| Weitering HH, Chen J, DiNardo NJ, et al. (1993) Electron correlation, metallization, and Fermi-level pinning at ultrathin K/Si(111) interfaces. Physical Review. B, Condensed Matter. 48: 8119-8135 |
| McIlroy DN, Heskett D, Swanston DM, et al. (1993) Occupied surface-state bands of Bi(1 x 1) overlayers on an InAs(110) surface grown by molecular-beam epitaxy. Physical Review. B, Condensed Matter. 47: 3751-3759 |
| Weiterina HH, Chen J, DiNardo NJ, et al. (1993) Electronic Structure of K/SI(111) Interfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 11: 2049-2053 |
| Heskett D, Tang D, McLean AB, et al. (1991) Metal-induced states on the GaAs(110) surface probed by angle-resolved photoemission spectroscopy Applied Surface Science. 48: 260-263 |
| McLean AB, Heskett D, Tang D, et al. (1990) Comment on "Schottky-barrier formation at low metal coverages: A consistent molecular-orbital calculation for K on GaAs(110)" Physical Review Letters. 65: 524 |
| DiNardo NJ, Wong TM, Plummer EW. (1990) Semiconductor-to-metal transition in an ultrathin interface: Cs/GaAs(110). Physical Review Letters. 65: 2177-2180 |