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Todd W. Hudnall, Ph.D. - Publications

Affiliations: 
Texas A & M University, College Station, TX, United States 
Area:
main group chemistry
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60 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Perera TA, Taylor WV, Gildner MB, Reinheimer EW, Ito S, Nelson A, Yost SR, Hudnall TW. Photochemical reactions of a diamidocarbene: cyclopropanation of bromonaphthalene, addition to pyridine, and activation of sp C-H bonds. Chemical Science. 14: 7867-7874. PMID 37502328 DOI: 10.1039/d2sc05122b  0.765
2021 Hudnall TW, Reinheimer EW, Dorsey CL. Synthesis, crystal structure determination, and spectroscopic analyses of 1-chloro-2-(2,6-diisopropylphenyl)-4,4-dimethyl-2-azaspiro[5.5]undecane-3,5-dione: an unyielding precursor to a cyclic (alkyl)(amido)carbene. Acta Crystallographica. Section C, Structural Chemistry. 77: 411-419. PMID 34216447 DOI: 10.1107/S2053229621006173  0.755
2020 Wang L, Liu L, Chen J, Mohsin A, Yum JH, Hudnall TW, Bielawski CW, Rajh T, Bai X, Gao SP, Gu G. Synthesis of Honeycomb-Structured Beryllium Oxide via Graphene Liquid Cells. Angewandte Chemie (International Ed. in English). PMID 32468699 DOI: 10.1002/Anie.202007244  0.422
2019 Gildner MB, Hudnall TW. Cyclic (aryl)(amido)carbenes: pushing the π-acidity of amidocarbenes through benzannulation. Chemical Communications (Cambridge, England). 55: 12300-12303. PMID 31566644 DOI: 10.1039/C9Cc05280A  0.362
2018 Dasari R, Błauż A, Medellin D, Kassim R, Viera C, Santarosa M, Van der Westhuyzen A, van Otterlo W, Olivas T, Yildiz T, Betancourt T, Shuster CB, Rogelj S, Rychlik B, Hudnall T, et al. Microtubule-Targeting 7-Deazahypoxanthines Derived from Marine Alkaloid Rigidins: Exploration of the N3 and N9 Positions and Interaction with Multi-Drug Resistance Proteins. Chemmedchem. PMID 30562414 DOI: 10.1002/Cmdc.201800658  0.305
2018 Melancon KM, Gildner MB, Hudnall TW. Synthesis, Spectroscopic Characterization, and Redox Reactivity of a Cyclic (Alkyl) Amino Carbene-Derived Arsamethine Cyanine Dye. Chemistry (Weinheim An Der Bergstrasse, Germany). PMID 29775499 DOI: 10.1002/Chem.201802393  0.747
2017 Perera TA, Reinheimer EW, Hudnall TW. Photochemically Switching Diamidocarbene Spin States Leads to Reversible Büchner Ring Expansions. Journal of the American Chemical Society. PMID 28945370 DOI: 10.1021/Jacs.7B09264  0.741
2016 Arias Ugarte R, Devarajan D, Mushinski RM, Hudnall TW. Antimony(v) cations for the selective catalytic transformation of aldehydes into symmetric ethers, α,β-unsaturated aldehydes, and 1,3,5-trioxanes. Dalton Transactions (Cambridge, England : 2003). PMID 27326797 DOI: 10.1039/C6Dt02121B  0.327
2016 Ledet AD, Hudnall TW. Reduction of a diamidocarbene-supported borenium cation: isolation of a neutral boryl-substituted radical and a carbene-stabilized aminoborylene. Dalton Transactions (Cambridge, England : 2003). PMID 26843319 DOI: 10.1039/C6Dt00300A  0.398
2016 Hamon CL, Dorsey CL, Özel T, Barnes EM, Hudnall TW, Betancourt T. Near-infrared fluorescent aza-BODIPY dye-loaded biodegradable polymeric nanoparticles for optical cancer imaging Journal of Nanoparticle Research. 18. DOI: 10.1007/S11051-016-3518-7  0.718
2015 Hudnall TW, Dorsey CL, Jones JS, Gabbaï FP. Stepwise reduction of an α-phosphonio-carbocation to a crystalline phosphine radical cation and an acridinyl-phosphorus ylide. Chemistry (Weinheim An Der Bergstrasse, Germany). PMID 26629680 DOI: 10.1002/Chem.201504744  0.783
2015 Deardorff CL, Eric Sikma R, Rhodes CP, Hudnall TW. Carbene-derived α-acyl formamidinium cations: organic molecules with readily tunable multiple redox processes. Chemical Communications (Cambridge, England). PMID 26392238 DOI: 10.1039/C5Cc06322A  0.328
2015 Wiggins KM, Hudnall TW, Shen Q, Kryger MJ, Moore JS, Bielawski CW. Retraction of "Mechanical reconfiguration of stereoisomers". Journal of the American Chemical Society. 137: 3428. PMID 25758672 DOI: 10.1021/Jacs.5B01988  0.341
2015 Montalvo SJ, Hudnall TW, Feakes DA. Exploring the redox reactivity of the [B20H18]2- ion with carbon-based nucleophiles and electrophiles Journal of Organometallic Chemistry. DOI: 10.1016/J.Jorganchem.2015.05.064  0.363
2014 Torres AJ, Dorsey CL, Hudnall TW. Preparation and use of carbonyl-decorated carbenes in the activation of white phosphorus. Journal of Visualized Experiments : Jove. e52149. PMID 25350272 DOI: 10.3791/52149  0.777
2014 Dorsey CL, Mushinski RM, Hudnall TW. Metal-free stabilization of monomeric antimony(I): a carbene-supported stibinidene. Chemistry (Weinheim An Der Bergstrasse, Germany). 20: 8914-7. PMID 24925469 DOI: 10.1002/Chem.201403578  0.764
2014 Rodrigues RR, Dorsey CL, Arceneaux CA, Hudnall TW. Phosphaalkene vs. phosphinidene: the nature of the P-C bond in carbonyl-decorated carbene → PPh adducts. Chemical Communications (Cambridge, England). 50: 162-4. PMID 23925541 DOI: 10.1039/C3Cc45134H  0.778
2014 Koh D, Yum JH, Banerjee SK, Hudnall TW, Bielawski C, Lanford WA, French BL, French M, Henry P, Li H, Kuhn M, King SW. Investigation of atomic layer deposited Beryllium oxide material properties for high-k dielectric applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 32. DOI: 10.1116/1.4867436  0.426
2014 Koh D, Kwon HM, Kim TW, Kim DH, Hudnall TW, Bielawski CW, Maszara W, Veksler D, Gilmer D, Kirsch PD, Banerjee SK. Lg = 100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer Applied Physics Letters. 104. DOI: 10.1063/1.4871504  0.435
2014 Min KS, Kang SH, Kim JK, Yum JH, Jhon YI, Hudnall TW, Bielawski CW, Banerjee SK, Bersuker G, Jhon MS, Yeom GY. Atomic layer etching of BeO using BCl3/Ar for the interface passivation layer of III-V MOS devices Microelectronic Engineering. 114: 121-125. DOI: 10.1016/j.mee.2013.10.003  0.305
2014 Johnson DW, Yum JH, Hudnall TW, Mushinski RM, Bielawski CW, Roberts JC, Wang WE, Banerjee SK, Harris HR. Characterization of ALD beryllium oxide as a potential high-k gate dielectric for low-leakage AlGaN/GaN MOSHEMTs Journal of Electronic Materials. 43: 151-154. DOI: 10.1007/S11664-013-2754-1  0.458
2013 Dorsey CL, Squires BM, Hudnall TW. Isolation of a neutral P8 cluster by [2+2] cycloaddition of a diphosphene facilitated by carbene activation of white phosphorus. Angewandte Chemie (International Ed. in English). 52: 4462-5. PMID 23568344 DOI: 10.1002/Anie.201301137  0.736
2013 Yum JH, Shin HS, Mushinski RM, Hudnall TW, Oh J, Loh WY, Bielawski CW, Bersuker G, Banerjee SK, Wang WE, Kirsch PD, Jammy R. A comparative study of gate first and last Si MOSFETs fabrication processes using ALD beryllium oxide as an interface passivation layer 2013 International Symposium On Vlsi Technology, Systems and Application, Vlsi-Tsa 2013. DOI: 10.1109/VLSI-TSA.2013.6545611  0.306
2013 Shin HS, Yum JH, Johnson DW, Harris HR, Hudnall TW, Oh J, Kirsch P, Wang WE, Bielawski CW, Banerjee SK, Lee JC, Lee HD. Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors Applied Physics Letters. 103. DOI: 10.1063/1.4833815  0.452
2013 Min KS, Kang SH, Kim JK, Yum JH, Jhon YI, Hudnall TW, Bielawski CW, Banerjee SK, Bersuker G, Jhon MS, Yeom GY. Atomic layer etching of Al2O3 using BCl3/Ar for the interface passivation layer of III-V MOS devices Microelectronic Engineering. 110: 121-125. DOI: 10.1016/J.Mee.2013.03.170  0.42
2013 Douglas N, Neef CJ, Rogers RA, Stanley JA, Armitage J, Martin B, Hudnall TW, Brittain WJ. Reactivity of tetrahydrochromeno[2,3-b]indoles: Chromic indicators of cyanide Journal of Physical Organic Chemistry. 26: 688-695. DOI: 10.1002/Poc.3158  0.356
2013 Dorsey CL, Squires BM, Hudnall TW. Inside Cover: Isolation of a Neutral P8Cluster by [2+2] Cycloaddition of a Diphosphene Facilitated by Carbene Activation of White Phosphorus (Angew. Chem. Int. Ed. 16/2013) Angewandte Chemie International Edition. 52: 4276-4276. DOI: 10.1002/Anie.201302123  0.743
2013 Dorsey CL, Squires BM, Hudnall TW. Innentitelbild: Isolation of a Neutral P8Cluster by [2+2] Cycloaddition of a Diphosphene Facilitated by Carbene Activation of White Phosphorus (Angew. Chem. 16/2013) Angewandte Chemie. 125: 4372-4372. DOI: 10.1002/Ange.201302123  0.745
2012 Yum JH, Oh J, Hudnall TW, Bielawski CW, Bersuker G, Banerjee SK. Comparative study of SiO 2, Al 2O 3, and BeO ultrathin interfacial barrier layers in Si metal-oxide-semiconductor devices Active and Passive Electronic Components. 2012. DOI: 10.1155/2012/359580  0.436
2012 Yum JH, Bersuker G, Hudnall TW, Bielawski CW, Kirsch P, Banerjee SK. A study of novel ALD beryllium oxide as an interface passivation layer for Si MOS devices International Symposium On Vlsi Technology, Systems, and Applications, Proceedings. DOI: 10.1109/VLSI-TSA.2012.6210153  0.314
2012 Koh D, Yum JH, Akyol T, Ferrer DA, Lei M, Hudnall TW, Downer MC, Bielawski CW, Hill R, Bersuker G, Banerjee SK. Novel atomic layer deposited thin film beryllium oxide for InGaAs MOS Devices Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 163-166. DOI: 10.1109/ICIPRM.2012.6403347  0.321
2012 Yum JH, Shin HS, Hill R, Oh J, Lee HD, Mushinski RM, Hudnall TW, Bielawski CW, Banerjee SK, Loh WY, Wang WE, Kirsch P. A study of capping layers for sulfur monolayer doping on III-V junctions Applied Physics Letters. 101. DOI: 10.1063/1.4772641  0.421
2012 Lei M, Yum JH, Price J, Hudnall TW, Bielawski CW, Banerjee SK, Lysaght PS, Bersuker G, Downer MC. Spectroscopic evaluation of band alignment of atomic layer deposited BeO on Si(100) Applied Physics Letters. 100. DOI: 10.1063/1.3697646  0.407
2012 Mushinski RM, Squires BM, Sincerbox KA, Hudnall TW. Amino-acrylamido carbenes: Modulating carbene reactivity via decoration with an α,β-unsaturated carbonyl moiety Organometallics. 31: 4862-4870. DOI: 10.1021/Om300401T  0.302
2012 Yum JH, Akyol T, Lei M, Ferrer DA, Hudnall TW, Downer M, Bielawski CW, Bersuker G, Lee JC, Banerjee SK. Electrical and physical characteristics for crystalline atomic layer deposited beryllium oxide thin film on Si and GaAs substrates Thin Solid Films. 520: 3091-3095. DOI: 10.1016/J.Tsf.2011.11.053  0.435
2011 Li Z, Lin TP, Liu S, Huang CW, Hudnall TW, Gabbaï FP, Conti PS. Rapid aqueous [18F]-labeling of a bodipy dye for positron emission tomography/fluorescence dual modality imaging. Chemical Communications (Cambridge, England). 47: 9324-6. PMID 21779546 DOI: 10.1039/C1Cc13089G  0.594
2011 Yum JH, Akyol T, Ferrer DA, Lee JC, Banerjee SK, Lei M, Downer M, Hudnall TW, Bielawski CW, Bersuker G. Comparison of the self-cleaning effects and electrical characteristics of BeO and Al 2O 3 deposited as an interface passivation layer on GaAs MOS devices Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 29. DOI: 10.1116/1.3628546  0.444
2011 Yum JH, Bersuker G, Akyol T, Ferrer DA, Lei M, Park KW, Hudnall TW, Downer MC, Bielawski CW, Yu ET, Price J, Lee JC, Banerjee SK. Epitaxial ALD BeO: Efficient oxygen diffusion barrier for EOT scaling and reliability improvement Ieee Transactions On Electron Devices. 58: 4384-4392. DOI: 10.1109/Ted.2011.2170073  0.437
2011 Yum JH, Bersuker G, Ferrer DA, Akyol T, Lei M, Park KW, Hudnall TW, Downer MC, Bielawski CW, Yu ET, Price J, Kirsch P, Jammy R, Lee JC, Banerjee SK. ALD beryllium oxide: Novel barrier layer for high performance gate stacks on Si and high mobility substrates Technical Digest - International Electron Devices Meeting, Iedm. 28.2.1-28.2.4. DOI: 10.1109/IEDM.2011.6131629  0.321
2011 Akyol T, Yum JH, Ferrer DA, Lei M, Downer M, Bielawski CW, Hudnall TW, Bersuker G, Lee JC, Banerjee SK. Introduction of ALD Beryllium oxide gate dielectric for III-V MOS devices Device Research Conference - Conference Digest, Drc. 127-128. DOI: 10.1109/DRC.2011.5994448  0.318
2011 Yum JH, Akyol T, Lei M, Ferrer DA, Hudnall TW, Downer M, Bielawski CW, Bersuker G, Lee JC, Banerjee SK. Inversion type InP metal oxide semiconductor field effect transistor using novel atomic layer deposited BeO gate dielectric Applied Physics Letters. 99. DOI: 10.1063/1.3614446  0.46
2011 Yum JH, Akyol T, Lei M, Hudnall T, Bersuker G, Downer M, Bielawski CW, Lee JC, Banerjee SK. Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices Journal of Applied Physics. 109. DOI: 10.1063/1.3553872  0.435
2011 Wiggins KM, Hudnall TW, Tennyson AG, Bielawski CW. Selective scission of pyridine-boronium complexes: Mechanical generation of Brønsted bases and polymerization catalysts Journal of Materials Chemistry. 21: 8355-8359. DOI: 10.1039/C0Jm03619F  0.384
2011 Yum JH, Akyol T, Lei M, Ferrer DA, Hudnall TW, Downer M, Bielawski CW, Bersuker G, Lee JC, Banerjee SK. A study of highly crystalline novel beryllium oxide film using atomic layer deposition Journal of Crystal Growth. 334: 126-133. DOI: 10.1016/J.Jcrysgro.2011.08.040  0.431
2010 Park JS, Karnas E, Ohkubo K, Chen P, Kadish KM, Fukuzumi S, Bielawski CW, Hudnall TW, Lynch VM, Sessler JL. Ion-mediated electron transfer in a supramolecular donor-acceptor ensemble. Science (New York, N.Y.). 329: 1324-7. PMID 20829481 DOI: 10.1126/Science.1192044  0.46
2010 Hudnall TW, Moerdyk JP, Bielawski CW. Ammonia N-H activation by a N,N'-diamidocarbene. Chemical Communications (Cambridge, England). 46: 4288-90. PMID 20480095 DOI: 10.1039/C0Cc00638F  0.414
2010 Hudnall TW, Moorhead EJ, Gusev DG, Bielawski CW. N,N'-diamidoketenimines via coupling of isocyanides to an N-heterocyclic carbene. The Journal of Organic Chemistry. 75: 2763-6. PMID 20297836 DOI: 10.1021/Jo100427G  0.435
2010 Wiggins KM, Hudnall TW, Shen Q, Kryger MJ, Moore JS, Bielawski CW. Mechanical reconfiguration of stereoisomers. Journal of the American Chemical Society. 132: 3256-7. PMID 20166664 DOI: 10.1021/Ja910716S  0.419
2010 Tennyson AG, Ono RJ, Hudnall TW, Khramov DM, Er JA, Kamplain JW, Lynch VM, Sessler JL, Bielawski CW. Quinobis(imidazolylidene): synthesis and study of an electron-configurable bis(N-heterocyclic carbene) and its bimetallic complexes. Chemistry (Weinheim An Der Bergstrasse, Germany). 16: 304-15. PMID 19946903 DOI: 10.1002/Chem.200901883  0.753
2010 Hudnall TW, Tennyson AG, Bielawski CW. A seven-membered N,N ′-diamidocarbene Organometallics. 29: 4569-4578. DOI: 10.1021/Om1007665  0.468
2010 Hudnall TW, Lin TP, Gabbaï FP. Substitution of hydroxide by fluoride at the boron center of a BODIPY dye Journal of Fluorine Chemistry. 131: 1182-1186. DOI: 10.1016/J.Jfluchem.2010.06.012  0.615
2009 Hudnall TW, Bielawski CW. An N,N'-diamidocarbene: studies in C-H insertion, reversible carbonylation, and transition-metal coordination chemistry. Journal of the American Chemical Society. 131: 16039-41. PMID 19842700 DOI: 10.1021/Ja907481W  0.519
2009 Kim Y, Hudnall TW, Bouhadir G, Bourissou D, Gabbaï FP. Azide ion recognition in water-CHCl(3) using a chelating phosphonium borane as a receptor. Chemical Communications (Cambridge, England). 3729-31. PMID 19557263 DOI: 10.1039/B905232A  0.636
2009 Hudnall TW, Chiu CW, Gabbaï FP. Fluoride ion recognition by chelating and cationic boranes. Accounts of Chemical Research. 42: 388-97. PMID 19140747 DOI: 10.1021/Ar8001816  0.653
2008 Hudnall TW, Gabbaï FP. A BODIPY boronium cation for the sensing of fluoride ions. Chemical Communications (Cambridge, England). 4596-7. PMID 18815695 DOI: 10.1039/B808740G  0.501
2008 Dorsey CL, Jewula P, Hudnall TW, Hoefelmeyer JD, Taylor TJ, Honesty NR, Chiu CW, Schulte M, Gabbaï FP. Fluoride ion complexation by a B(2)/Hg heteronuclear tridentate Lewis acid. Dalton Transactions (Cambridge, England : 2003). 4442-50. PMID 18698447 DOI: 10.1039/B801040D  0.74
2008 Hudnall TW, Kim YM, Bebbington MW, Bourissou D, Gabbaï FP. Fluoride ion chelation by a bidentate phosphonium/borane Lewis acid. Journal of the American Chemical Society. 130: 10890-1. PMID 18652460 DOI: 10.1021/Ja804492Y  0.615
2007 Hudnall TW, Gabbaï FP. Ammonium boranes for the selective complexation of cyanide or fluoride ions in water. Journal of the American Chemical Society. 129: 11978-86. PMID 17845043 DOI: 10.1021/Ja073793Z  0.564
2006 Hudnall TW, Melaïmi M, Gabbaï FP. Hybrid Lewis acid/hydrogen-bond donor receptor for fluoride. Organic Letters. 8: 2747-9. PMID 16774247 DOI: 10.1021/Ol060791V  0.543
2006 Hudnall TW, Bondi JF, Gabbaï FP. Ortho-Borylated trifluoroacetanilides: Synthesis and fluoride ion binding properties Main Group Chemistry. 5: 319-327. DOI: 10.1080/10241220701596753  0.587
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