Vinod K. Sangwan, Ph.D. - Publications

Affiliations: 
Physics University of Maryland, College Park, College Park, MD 
Area:
Nanostructures

30 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Arnold HN, Cress CD, McMorrow JJ, Schmucker SW, Sangwan VK, Jaber-Ansari L, Kumar R, Puntambekar KP, Luck KA, Marks TJ, Hersam MC. Tunable Radiation Response in Hybrid Organic-Inorganic Gate Dielectrics for Low-Voltage Graphene Electronics. Acs Applied Materials & Interfaces. PMID 26882215 DOI: 10.1021/acsami.5b12259  0.84
2015 Jariwala D, Howell S, Chen KS, Kang J, Sangwan VK, Filippone SA, Turrisi R, Marks TJ, Lauhon LJ, Hersam MC. Hybrid, Gate-Tunable, van der Waals p-n Heterojunctions from Pentacene and MoS2. Nano Letters. PMID 26651229 DOI: 10.1021/acs.nanolett.5b04141  0.84
2015 McMorrow JJ, Walker A, Sangwan VK, Jariwala D, Hoffman EE, Everaerts K, Facchetti A, Hersam MC, Marks TJ. Solution-Processed Self-Assembled Nanodielectrics on Template-Stripped Metal Substrates. Acs Applied Materials & Interfaces. PMID 26479833 DOI: 10.1021/acsami.5b07744  0.84
2015 Sangwan VK, Jariwala D, Kim IS, Chen KS, Marks TJ, Lauhon LJ, Hersam MC. Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2. Nature Nanotechnology. 10: 403-6. PMID 25849785 DOI: 10.1038/nnano.2015.56  0.84
2015 Howell SL, Jariwala D, Wu CC, Chen KS, Sangwan VK, Kang J, Marks TJ, Hersam MC, Lauhon LJ. Investigation of band-offsets at monolayer-multilayer MoS₂ junctions by scanning photocurrent microscopy. Nano Letters. 15: 2278-84. PMID 25807012 DOI: 10.1021/nl504311p  0.84
2015 Jariwala D, Sangwan VK, Seo JW, Xu W, Smith J, Kim CH, Lauhon LJ, Marks TJ, Hersam MC. Large-area, low-voltage, antiambipolar heterojunctions from solution-processed semiconductors. Nano Letters. 15: 416-21. PMID 25438195 DOI: 10.1021/nl5037484  0.84
2014 Wood JD, Wells SA, Jariwala D, Chen KS, Cho E, Sangwan VK, Liu X, Lauhon LJ, Marks TJ, Hersam MC. Effective passivation of exfoliated black phosphorus transistors against ambient degradation. Nano Letters. 14: 6964-70. PMID 25380142 DOI: 10.1021/nl5032293  0.84
2014 Kim IS, Sangwan VK, Jariwala D, Wood JD, Park S, Chen KS, Shi F, Ruiz-Zepeda F, Ponce A, Jose-Yacaman M, Dravid VP, Marks TJ, Hersam MC, Lauhon LJ. Influence of stoichiometry on the optical and electrical properties of chemical vapor deposition derived MoS2. Acs Nano. 8: 10551-8. PMID 25223821 DOI: 10.1021/nn503988x  0.84
2014 Sangwan VK, Jariwala D, Everaerts K, McMorrow JJ, He J, Grayson M, Lauhon LJ, Marks TJ, Hersam MC. Wafer-scale solution-derived molecular gate dielectrics for low-voltage graphene electronics Applied Physics Letters. 104. DOI: 10.1063/1.4866387  0.84
2014 Jariwala D, Sangwan VK, Lauhon LJ, Marks TJ, Hersam MC. Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides Acs Nano. 8: 1102-1120. DOI: 10.1021/nn500064s  0.84
2013 Jariwala D, Sangwan VK, Wu CC, Prabhumirashi PL, Geier ML, Marks TJ, Lauhon LJ, Hersam MC. Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode. Proceedings of the National Academy of Sciences of the United States of America. 110: 18076-80. PMID 24145425 DOI: 10.1073/pnas.1317226110  0.84
2013 Sangwan VK, Arnold HN, Jariwala D, Marks TJ, Lauhon LJ, Hersam MC. Low-frequency electronic noise in single-layer MoS2 transistors. Nano Letters. 13: 4351-5. PMID 23944940 DOI: 10.1021/nl402150r  0.84
2013 Everaerts K, Emery JD, Jariwala D, Karmel HJ, Sangwan VK, Prabhumirashi PL, Geier ML, McMorrow JJ, Bedzyk MJ, Facchetti A, Hersam MC, Marks TJ. Ambient-processable high capacitance hafnia-organic self-assembled nanodielectrics. Journal of the American Chemical Society. 135: 8926-39. PMID 23688160 DOI: 10.1021/ja4019429  0.84
2013 Sangwan VK, Jariwala D, Filippone SA, Karmel HJ, Johns JE, Alaboson JM, Marks TJ, Lauhon LJ, Hersam MC. Quantitatively enhanced reliability and uniformity of high-κ dielectrics on graphene enabled by self-assembled seeding layers. Nano Letters. 13: 1162-7. PMID 23387502 DOI: 10.1021/nl3045553  0.84
2013 Behnam A, Sangwan VK, Zhong X, Lian F, Estrada D, Jariwala D, Hoag AJ, Lauhon LJ, Marks TJ, Hersam MC, Pop E. High-field transport and thermal reliability of sorted carbon nanotube network devices. Acs Nano. 7: 482-90. PMID 23259715 DOI: 10.1021/nn304570u  0.84
2013 Jariwala D, Sangwan VK, Lauhon LJ, Marks TJ, Hersam MC. Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing. Chemical Society Reviews. 42: 2824-60. PMID 23124307 DOI: 10.1039/c2cs35335k  0.84
2013 Shastry TA, Seo JW, Lopez JJ, Arnold HN, Kelter JZ, Sangwan VK, Lauhon LJ, Marks TJ, Hersam MC. Large-area, electronically monodisperse, aligned single-walled carbon nanotube thin films fabricated by evaporation-driven self-assembly. Small (Weinheim An Der Bergstrasse, Germany). 9: 45-51. PMID 22987547 DOI: 10.1002/smll.201201398  0.84
2013 Tselev A, Sangwan VK, Jariwala D, Marks TJ, Lauhon LJ, Hersam MC, Kalinin SV. Near-field microwave microscopy of high-κ oxides grown on graphene with an organic seeding layer Applied Physics Letters. 103. DOI: 10.1063/1.4847675  0.84
2013 Jariwala D, Sangwan VK, Late DJ, Johns JE, Dravid VP, Marks TJ, Lauhon LJ, Hersam MC. Band-like transport in high mobility unencapsulated single-layer MoS 2 transistors Applied Physics Letters. 102. DOI: 10.1063/1.4803920  0.84
2013 Sczygelski E, Sangwan VK, Wu CC, Arnold HN, Everaerts K, Marks TJ, Hersam MC, Lauhon LJ. Extrinsic and intrinsic photoresponse in monodisperse carbon nanotube thin film transistors Applied Physics Letters. 102. DOI: 10.1063/1.4793519  0.84
2013 Wu CC, Jariwala D, Sangwan VK, Marks TJ, Hersam MC, Lauhon LJ. Elucidating the photoresponse of ultrathin MoS2 field-effect transistors by scanning photocurrent microscopy Journal of Physical Chemistry Letters. 4: 2508-2513. DOI: 10.1021/jz401199x  0.84
2012 Sangwan VK, Ortiz RP, Alaboson JM, Emery JD, Bedzyk MJ, Lauhon LJ, Marks TJ, Hersam MC. Fundamental performance limits of carbon nanotube thin-film transistors achieved using hybrid molecular dielectrics. Acs Nano. 6: 7480-8. PMID 22783918 DOI: 10.1021/nn302768h  0.84
2011 Sangwan VK, Southard A, Moore TL, Ballarotto VW, Hines DR, Fuhrer MS, Williams ED. Transfer printing approach to all-carbon nanoelectronics Microelectronic Engineering. 88: 3150-3154. DOI: 10.1016/j.mee.2011.06.017  0.84
2010 Sangwan VK, Ballarotto VW, Siegrist K, Williams ED. Characterizing voltage contrast in photoelectron emission microscopy. Journal of Microscopy. 238: 210-7. PMID 20579259 DOI: 10.1111/j.1365-2818.2009.03342.x  0.84
2010 Sangwan VK, Behnam A, Ballarotto VW, Fuhrer MS, Ural A, Williams ED. Optimizing transistor performance of percolating carbon nanotube networks Applied Physics Letters. 97. DOI: 10.1063/1.3469930  0.84
2010 Sangwan VK, Ballarotto VW, Hines DR, Fuhrer MS, Williams ED. Controlled growth, patterning and placement of carbon nanotube thin films Solid-State Electronics. 54: 1204-1210. DOI: 10.1016/j.sse.2010.05.027  0.84
2008 Sangwan VK, Ballarotto VW, Fuhrer MS, Williams ED. Facile fabrication of suspended as-grown carbon nanotube devices Applied Physics Letters. 93. DOI: 10.1063/1.2987457  0.84
2007 Sangwan VK, Ballarotto VW, Fuhrer MS, Williams ED. Fabrication and characterization of suspended carbon nanotubes 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422518  0.84
2007 Southard A, Sangwan VK, Williams ED, Fuhrer MS. Transparent organic field-effect transistors with carbon nanotube electrodes 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422516  0.84
2006 Sangwan VK, Hines DR, Ballarotto VW, Esen G, Fuhrer MS, Williams ED. Patterned carbon nanotube thin-film transistors with transfer-print assembly Materials Research Society Symposium Proceedings. 963: 94-100.  0.84
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