Year |
Citation |
Score |
2005 |
Rayner GB, Lucovsky G, Kang D. Chemical phase separation in Zr silicate alloys: An EXAFS study distinguishing between phase separation with and without XRD detectable crystallization Physica Scripta T. 1022-1025. DOI: 10.1238/Physica.Topical.115a01022 |
0.622 |
|
2004 |
Lucovsky G, Rayner GB, Kang D, Hinkle CL, Hong JG. A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Zr(Hf) silicate alloys Surface Science. 566: 772-776. DOI: 10.1016/J.Susc.2004.06.010 |
0.715 |
|
2004 |
Rayner GB, Kang D, Lucovsky G. Chemical phase separation in Zr silicate alloys: A spectroscopic study distinguishing between chemical phase separation with different degrees of micro- and nano-crystallinity Journal of Non-Crystalline Solids. 338: 151-154. DOI: 10.1016/J.Mee.2004.01.008 |
0.73 |
|
2004 |
Rayner GB, Kang D, Hinkle CL, Hong JG, Lucovsky G. Chemical phase separation in Zr silicate alloys: A spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity Microelectronic Engineering. 72: 304-309. DOI: 10.1016/j.mee.2004.01.008 |
0.709 |
|
2004 |
Lucovsky G, Rayner GB, Kang D, Hinkle CL, Hong JG. A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf(Zr) silicate alloys Applied Surface Science. 234: 429-433. DOI: 10.1016/j.apsusc.2004.05.075 |
0.714 |
|
2003 |
Rayner GB, Kang D, Lucovsky G. Spectroscopic study of chemical phase separation in zirconium silicate alloys Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21: 1783. DOI: 10.1116/1.1593646 |
0.694 |
|
2003 |
Bae C, Rayner GB, Lucovsky G. Device-quality GaN-dielectric interfaces by 300 °C remote plasma processing Applied Surface Science. 216: 119-123. DOI: 10.1016/S0169-4332(03)00497-5 |
0.445 |
|
2003 |
Lucovsky G, Rayner GB, Zhang Y, Fulton CC, Nemanich RJ, Appel G, Ade H, Whitten JL. Electronic structure of transition metal high-k dielectrics: Interfacial band offset energies for microelectronic devices Applied Surface Science. 212: 563-569. DOI: 10.1016/S0169-4332(03)00055-2 |
0.656 |
|
2003 |
Rayner GB, Kang D, Lucovsky G. Spectroscopic study of chemical phase separation in zirconium silicate alloys Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 1783-1791. |
0.578 |
|
2002 |
Rayner GB, Kang D, Zhang Y, Lucovsky G. Nonlinear composition dependence of x-ray photoelectron spectroscopy and Auger electron spectroscopy features in plasma-deposited zirconium silicate alloy thin films Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1748-1758. DOI: 10.1116/1.1493788 |
0.594 |
|
2002 |
Lucovsky G, Zhang Y, Rayner GB, Appel G, Ade H, Whitten JL. Electronic structure of high-k transition metal oxides and their silicate and aluminate alloys Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1739-1747. DOI: 10.1116/1.1493787 |
0.555 |
|
2001 |
Lucovsky G, Rayner GB, Kang D, Appel G, Johnson RS, Zhang Y, Sayers DE, Ade H, Whitten JL. Electronic structure of noncrystalline transition metal silicate and aluminate alloys Applied Physics Letters. 79: 1775-1777. DOI: 10.1063/1.1404997 |
0.591 |
|
2001 |
Lucovsky G, Rayner GB, Johnson RS. Chemical and physical limits on the performance of metal silicate high-k gate dielectrics Microelectronics and Reliability. 41: 937-945. DOI: 10.1016/S0026-2714(01)00046-4 |
0.613 |
|
2000 |
Lucovsky G, Rayner GB. Microscopic model for enhanced dielectric constants in low concentration SiO2-rich noncrystalline Zr and Hf silicate alloys Applied Physics Letters. 77: 2912-2914. DOI: 10.1063/1.1320860 |
0.573 |
|
2000 |
Lucovsky G, Rayner GB. Microscopic model for enhanced dielectric constants in low concentration SiO2-rich noncrystalline Zr and Hf silicate alloys Applied Physics Letters. 77: 2912-2914. |
0.327 |
|
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