Christopher L. Hinkle, Ph.D. - Publications

Affiliations: 
North Carolina State University, Raleigh, NC 
Area:
ultra-thin Si oxyitride devices

85 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Barton A, Walsh LA, Smyth CM, Qin X, Addou R, Cormier C, Hurley PK, Wallace RM, Hinkle CL. Impact of Etch Processes on the Chemistry and Surface States of the Topological Insulator BiSe. Acs Applied Materials & Interfaces. PMID 31416305 DOI: 10.1021/acsami.9b10625  0.64
2018 Nie Y, Barton AT, Addou R, Zheng Y, Walsh LA, Eichfeld SM, Yue R, Cormier CR, Zhang C, Wang Q, Liang C, Robinson JA, Kim M, Vandenberghe W, Colombo L, ... ... Hinkle CL, et al. Dislocation driven spiral and non-spiral growth in layered chalcogenides. Nanoscale. PMID 30052245 DOI: 10.1039/c8nr02280a  0.64
2018 Nie Y, Barton AT, Addou R, Zheng Y, Walsh LA, Eichfeld SM, Yue R, Cormier CR, Zhang C, Wang Q, Liang C, Robinson JA, Kim M, Vandenberghe W, Colombo L, ... ... Hinkle CL, et al. Dislocation driven spiral and non-spiral growth in layered chalcogenides. Nanoscale. PMID 30052245 DOI: 10.1039/c8nr02280a  0.64
2018 Zhou G, Addou R, Wang Q, Honari S, Cormier CR, Cheng L, Yue R, Smyth CM, Laturia A, Kim J, Vandenberghe WG, Kim MJ, Wallace RM, Hinkle CL. High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth. Advanced Materials (Deerfield Beach, Fla.). e1803109. PMID 30022534 DOI: 10.1002/adma.201803109  0.64
2018 Walsh LA, Green AJ, Addou R, Nolting W, Cormier CR, Barton AT, Mowll TR, Yue R, Lu N, Kim J, Kim MJ, LaBella VP, Ventrice CA, McDonnell S, Vandenberghe WG, ... ... Hinkle CL, et al. Fermi Level Manipulation Through Native Doping in the Topological Insulator BiSe. Acs Nano. PMID 29874037 DOI: 10.1021/acsnano.8b03414  0.64
2017 Dong H, Gong C, Addou R, McDonnell S, Azcatl A, Qin X, Wang W, Wang WH, Hinkle CL, Wallace RM. Schottky barrier height of Pd/MoS2 contact by large area photoemission spectroscopy. Acs Applied Materials & Interfaces. PMID 29035026 DOI: 10.1021/acsami.7b10974  0.64
2017 Zhao P, Azcatl A, Gomeniuk YY, Bolshakov P, Schmidt M, McDonnell SJ, Hinkle CL, Hurley PK, Wallace RM, Young C. Probing Interface Defects in Top-Gated MoS2 Transistors with Impedance Spectroscopy. Acs Applied Materials & Interfaces. PMID 28650155 DOI: 10.1021/acsami.7b06204  0.64
2016 Azcatl A, Qin X, Prakash A, Zhang C, Cheng L, Wang Q, Lu N, Kim MJ, Kim J, Cho K, Addou R, Hinkle CL, Appenzeller J, Wallace RM. Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure. Nano Letters. PMID 27494551 DOI: 10.1021/acs.nanolett.6b01853  0.88
2016 McDonnell S, Smyth C, Hinkle CL, Wallace RM. MoS2-Titanium Contact Interface Reactions. Acs Applied Materials & Interfaces. PMID 26967016 DOI: 10.1021/acsami.6b00275  0.88
2015 Addou R, McDonnell S, Barrera D, Guo Z, Azcatl A, Wang J, Zhu H, Hinkle CL, Quevedo-Lopez M, Alshareef HN, Colombo L, Hsu JW, Wallace RM. Impurities and Electronic Property Variations of Natural MoS2 Crystal Surfaces. Acs Nano. PMID 26301428 DOI: 10.1021/acsnano.5b03309  0.88
2015 Yue R, Barton AT, Zhu H, Azcatl A, Pena LF, Wang J, Peng X, Lu N, Cheng L, Addou R, McDonnell S, Colombo L, Hsu JW, Kim J, Kim MJ, ... ... Hinkle CL, et al. HfSe2 thin films: 2D transition metal dichalcogenides grown by molecular beam epitaxy. Acs Nano. 9: 474-80. PMID 25496648 DOI: 10.1021/nn5056496  0.88
2015 Barton AT, Yue R, Anwar S, Zhu H, Peng X, McDonnell S, Lu N, Addou R, Colombo L, Kim MJ, Wallace RM, Hinkle CL. Transition metal dichalcogenide and hexagonal boron nitride heterostructures grown by molecular beam epitaxy Microelectronic Engineering. 147: 306-309. DOI: 10.1016/j.mee.2015.04.105  0.88
2015 Zhao P, Vyas PB, McDonnell S, Bolshakov-Barrett P, Azcatl A, Hinkle CL, Hurley PK, Wallace RM, Young CD. Electrical characterization of top-gated molybdenum disulfide metal-oxide-semiconductor capacitors with high-k dielectrics Microelectronic Engineering. 147: 151-154. DOI: 10.1016/j.mee.2015.04.078  0.88
2014 Dong H, Cabrera W, Qin X, Brennan B, Zhernokletov D, Hinkle CL, Kim J, Chabal YJ, Wallace RM. Silicon interfacial passivation layer chemistry for high-k/InP interfaces. Acs Applied Materials & Interfaces. 6: 7340-5. PMID 24750024 DOI: 10.1021/am500752u  0.88
2014 McDonnell S, Addou R, Buie C, Wallace RM, Hinkle CL. Defect-dominated doping and contact resistance in MoS2. Acs Nano. 8: 2880-8. PMID 24484444 DOI: 10.1021/nn500044q  0.88
2014 Mohammed S, Nimmo MT, Malko AV, Hinkle CL. Chemical bonding and defect states of LPCVD grown silicon-rich Si 3N4 for quantum dot applications Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 32. DOI: 10.1116/1.4861338  0.88
2014 Galatage RV, Zhernokletov DM, Dong H, Brennan B, Hinkle CL, Wallace RM, Vogel EM. Accumulation capacitance frequency dispersion of III-V metal-insulator- semiconductor devices due to disorder induced gap states Journal of Applied Physics. 116. DOI: 10.1063/1.4886715  0.88
2013 McDonnell S, Brennan B, Azcatl A, Lu N, Dong H, Buie C, Kim J, Hinkle CL, Kim MJ, Wallace RM. HfO(2) on MoS(2) by atomic layer deposition: adsorption mechanisms and thickness scalability. Acs Nano. 7: 10354-61. PMID 24116949 DOI: 10.1021/nn404775u  0.88
2013 Brennan B, McDonnell S, Zhernokletov D, Dong H, Hinkle CL, Kim J, Wallace RM. In-situ studies of III-V surfaces and high-k atomic layer deposition Solid State Phenomena. 195: 90-94. DOI: 10.4028/www.scientific.net/SSP.195.90  0.88
2013 Hinkle CL, Galatage RV, Dong H, Anwar SRM, Brennan B, Wallace RM, Vogel EM. III-V/high-k defects: DIGS vs. border traps Ecs Transactions. 53: 161-167. DOI: 10.1149/05301.0161ecst  0.88
2013 Young CD, Hill RJW, Matthews K, Wang WE, Hinkle C, Wallace RM, Loh WY, Hobbs C, Kirsch PD, Jammy R. Effect of ALD oxidant and channel doping on positive bias stress characteristics of surface channel In0.53Ga0.47As nMOSFETs 2013 International Symposium On Vlsi Technology, Systems and Application, Vlsi-Tsa 2013. DOI: 10.1109/VLSI-TSA.2013.6545602  0.88
2013 Dong H, Santosh KC, Qin X, Brennan B, McDonnell S, Zhernokletov D, Hinkle CL, Kim J, Cho K, Wallace RM. In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP Journal of Applied Physics. 114. DOI: 10.1063/1.4825218  0.88
2013 Dong H, Brennan B, Qin X, Zhernokletov DM, Hinkle CL, Kim J, Wallace RM. In situ study of atomic layer deposition Al2O3 on GaP (100) Applied Physics Letters. 103. DOI: 10.1063/1.4821779  0.88
2013 Brennan B, Galatage RV, Thomas K, Pelucchi E, Hurley PK, Kim J, Hinkle CL, Vogel EM, Wallace RM. Chemical and electrical characterization of the HfO2/InAlAs interface Journal of Applied Physics. 114. DOI: 10.1063/1.4821021  0.88
2013 Dong H, Cabrera W, Galatage RV, Santosh K, Brennan B, Qin X, McDonnell S, Zhernokletov D, Hinkle CL, Cho K, Chabal YJ, Wallace RM. Indium diffusion through high-k dielectrics in high-k/InP stacks Applied Physics Letters. 103. DOI: 10.1063/1.4817932  0.88
2013 Qin X, Brennan B, Dong H, Kim J, Hinkle CL, Wallace RM. In situ atomic layer deposition study of HfO2 growth on NH 4OH and atomic hydrogen treated Al0.25Ga0.75N Journal of Applied Physics. 113. DOI: 10.1063/1.4812243  0.88
2013 Dong H, Brennan B, Zhernokletov D, Kim J, Hinkle CL, Wallace RM. In situ study of HfO2 atomic layer deposition on InP(100) Applied Physics Letters. 102. DOI: 10.1063/1.4803486  0.88
2013 Galatage RV, Dong H, Zhernokletov DM, Brennan B, Hinkle CL, Wallace RM, Vogel EM. Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors Applied Physics Letters. 102. DOI: 10.1063/1.4799660  0.88
2013 Chan J, Balakchiev M, Thron AM, Chapman RA, Riley D, Song SC, Jain A, Blatchford J, Shaw JB, Van Benthem K, Vogel EM, Hinkle CL. PtSi dominated Schottky barrier heights of Ni(Pt)Si contacts due to Pt segregation Applied Physics Letters. 102. DOI: 10.1063/1.4799277  0.88
2013 Thron AM, Pennycook TJ, Chan J, Luo W, Jain A, Riley D, Blatchford J, Shaw J, Vogel EM, Hinkle CL, Van Benthem K. Formation of pre-silicide layers below Ni1-xPt xSi/Si interfaces Acta Materialia. 61: 2481-2488. DOI: 10.1016/j.actamat.2013.01.022  0.88
2013 Cabrera W, Dong H, Brennan B, O'Connor E, Carolan P, Galatage R, Monaghan S, Povey I, Hurley PK, Hinkle CL, Chabal Y, Wallace RM. Atomic layer deposition of HfO2 on III-V semiconductors - An interfacial chemistry perspective Technical Proceedings of the 2013 Nsti Nanotechnology Conference and Expo, Nsti-Nanotech 2013. 2: 1-4.  0.88
2012 Brennan B, Zhernokletov DM, Dong H, Hinkle CL, Kim J, Wallace RM. In situ surface pre-treatment study of GaAs and In 0.53Ga 0.47As Applied Physics Letters. 100. DOI: 10.1063/1.3702885  0.88
2012 Hinkle CL, Galatage RV, Chapman RA, Vogel EM, Alshareef HN, Freeman C, Christensen M, Wimmer E, Niimi H, Li-Fatou A, Shaw JB, Chambers JJ. Gate-last TiN/HfO 2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition Applied Physics Letters. 100. DOI: 10.1063/1.3701165  0.88
2012 McDonnell S, Dong H, Hawkins JM, Brennan B, Milojevic M, Aguirre-Tostado FS, Zhernokletov DM, Hinkle CL, Kim J, Wallace RM. Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems Applied Physics Letters. 100. DOI: 10.1063/1.3700863  0.88
2012 Arreaga-Salas DE, Sra AK, Roodenko K, Chabal YJ, Hinkle CL. Progression of solid electrolyte interphase formation on hydrogenated amorphous silicon anodes for lithium-ion batteries Journal of Physical Chemistry C. 116: 9072-9077. DOI: 10.1021/jp300787p  0.88
2011 Hinkle CL, Brennan B, McDonnell S, Milojevic M, Sonnet AM, Zhernokletov DM, Galatage RV, Vogel EM, Wallace RM. High-k oxide growth on III-V surfaces: Chemical bonding and MOSFET performance Ecs Transactions. 35: 403-413. DOI: 10.1149/1.3569933  0.88
2011 Hinkle CL, Galatage RV, Chapman RA, Vogel EM, Alshareef HN, Freeman C, Wimmer E, Niimi H, Li-Fatou A, Chambers JJ, Shaw JB. Band-edge effective work functions by controlling HfO2/TiN interfacial composition for gate-last CMOS Ecs Transactions. 35: 285-295. DOI: 10.1149/1.3568871  0.88
2011 Galatage RV, Dong H, Zhernokletov DM, Brennan B, Hinkle CL, Wallace RM, Vogel EM. Effect of post deposition anneal on the characteristics of HfO 2/InP metal-oxide-semiconductor capacitors Applied Physics Letters. 99. DOI: 10.1063/1.3656001  0.88
2011 Milojevic M, Contreras-Guerrero R, O'Connor E, Brennan B, Hurley PK, Kim J, Hinkle CL, Wallace RM. In-situ characterization of Ga2O passivation of In 0.53Ga0.47As prior to high-k dielectric atomic layer deposition Applied Physics Letters. 99. DOI: 10.1063/1.3615666  0.88
2011 Chan J, Martinez NY, Fitzgerald JJD, Walker AV, Chapman RA, Riley D, Jain A, Hinkle CL, Vogel EM. Extraction of correct Schottky barrier height of sulfur implanted NiSi/n-Si junctions: Junction doping rather than barrier height lowering Applied Physics Letters. 99. DOI: 10.1063/1.3609874  0.88
2011 Sonnet AM, Galatage RV, Hurley PK, Pelucchi E, Thomas KK, Gocalinska A, Huang J, Goel N, Bersuker G, Kirk WP, Hinkle CL, Wallace RM, Vogel EM. On the calculation of effective electric field in In0.53 Ga 0.47 As surface channel metal-oxide-semiconductor field-effect-transistors Applied Physics Letters. 98. DOI: 10.1063/1.3588255  0.88
2011 Sonnet AM, Galatage RV, Hurley PK, Pelucchi E, Thomas K, Gocalinska A, Huang J, Goel N, Bersuker G, Kirk WP, Hinkle CL, Vogel EM. Remote phonon and surface roughness limited universal electron mobility of In0.53Ga0.47As surface channel MOSFETs Microelectronic Engineering. 88: 1083-1086. DOI: 10.1016/j.mee.2011.03.120  0.88
2011 Wang W, Hinkle CL, Vogel EM, Cho K, Wallace RM. Is interfacial chemistry correlated to gap states for high-k/III-V interfaces? Microelectronic Engineering. 88: 1061-1065. DOI: 10.1016/j.mee.2011.03.053  0.88
2011 Hinkle CL, Vogel EM, Ye PD, Wallace RM. Interfacial chemistry of oxides on InxGa(1-x)As and implications for MOSFET applications Current Opinion in Solid State and Materials Science. 15: 188-207. DOI: 10.1016/j.cossms.2011.04.005  0.88
2011 Brennan B, Milojevic M, Hinkle CL, Aguirre-Tostado FS, Hughes G, Wallace RM. Optimisation of the ammonium sulphide (NH4)2S passivation process on In0.53Ga0.47As Applied Surface Science. 257: 4082-4090. DOI: 10.1016/j.apsusc.2010.11.179  0.88
2010 Vogel EM, Sonnet AM, Galatage RV, Milojevic M, Hinkle CL, Wallace RM. Electrical and physical properties of high-k gate dielectrics on In xGa1-xAs Ecs Transactions. 28: 209-219. DOI: 10.1149/1.3375603  0.88
2010 Hinkle CL, Galatage RV, Chapman RA, Vogel EM, Alshareef HN, Freeman C, Wimmer E, Niimi H, Li-Fatou A, Shaw JB, Chambers JJ. Dipole controlled metal gate with hybrid low resistivity cladding for gate-last CMOS with low Vt Digest of Technical Papers - Symposium On Vlsi Technology. 183-184. DOI: 10.1109/VLSIT.2010.5556220  0.88
2010 Sonnet AM, Hinkle CL, Heh D, Bersuker G, Vogel EM. Impact of semiconductor and interface-state capacitance on metal/high-k/GaAs capacitance-voltage characteristics Ieee Transactions On Electron Devices. 57: 2599-2606. DOI: 10.1109/TED.2010.2059029  0.88
2010 Hinkle CL, Galatage RV, Chapman RA, Vogel EM, Alshareef HN, Freeman C, Wimmer E, Niimi H, Li-Fatou A, Shaw JB, Chambers JJ. Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO2 gate stacks Applied Physics Letters. 96. DOI: 10.1063/1.3353993  0.88
2010 Milojevic M, Hinkle CL, Vogel EM, Wallace RM. Interfacial chemistry of oxides on III-V compound semiconductors Fundamentals of Iii-V Semiconductor Mosfets. 131-172. DOI: 10.1007/978-1-4419-1547-4_6  0.88
2009 Hinkle CL, Milojevic M, Sonnet AM, Kim HC, Kim J, Vogel EM, Wallace RM. Surface studies of III-V materials: Oxidation control and device implications Ecs Transactions. 19: 387-403. DOI: 10.1149/1.3119561  0.88
2009 Hinkle CL, Sonnet AM, Chapman RA, Vogel EM. Extraction of the effective mobility of In0.53 Ga0.47As MOSFETs Ieee Electron Device Letters. 30: 316-318. DOI: 10.1109/LED.2009.2012880  0.88
2009 Sonnet AM, Galatage RV, Jivani MN, Milojevic M, Kirsch P, Huang J, Chapman RA, Hinkle CL, Wallace RM, Vogel EM. Impact of surface preparations on the transport characteristics of In xGa1-xAs metal-oxide-semiconductor field effect transistors (MOSFETs) 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378296  0.88
2009 Sonnet AM, Galatage RV, Jivani MN, Milojevic M, Chapman RA, Hinkle CL, Wallace RM, Vogel EM. Interfacial engineering of InGaAs/high-k metal-oxide-semiconductor field effect transistors (MOSFETs) Ieee International Integrated Reliability Workshop Final Report. 46-49. DOI: 10.1109/IRWS.2009.5383036  0.88
2009 Hinkle CL, Milojevic M, Vogel EM, Wallace RM. The significance of core-level electron binding energies on the proper analysis of InGaAs interfacial bonding Applied Physics Letters. 95. DOI: 10.1063/1.3249577  0.88
2009 Hinkle CL, Milojevic M, Brennan B, Sonnet AM, Aguirre-Tostado FS, Hughes GJ, Vogel EM, Wallace RM. Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning Applied Physics Letters. 94. DOI: 10.1063/1.3120546  0.88
2009 Hinkle CL, Milojevic M, Vogel EM, Wallace RM. Surface passivation and implications on high mobility channel performance (Invited Paper) Microelectronic Engineering. 86: 1544-1549. DOI: 10.1016/j.mee.2009.03.030  0.88
2009 Milojevic M, Sonnet AM, Hinkle CL, Kim HC, Vogel EM, Kim J, Wallace RM. In-situ studies of atomic layer deposition studies on high-mobility channel materials Ecs Transactions. 25: 115-122.  0.88
2008 Strzhemechny YM, Bataiev M, Tumakha SP, Goss SH, Hinkle CL, Fulton CC, Lucovsky G, Brillson LJ. Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2-HfO2- SiO2-Si stacks Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 232-243. DOI: 10.1116/1.2830692  0.88
2008 Milojevic M, Aguirre-Tostado FS, Hinkle CL, Kim HC, Vogel EM, Kim J, Wallace RM. Half-cycle atomic layer deposition reaction studies of Al2 O3 on In0.2 Ga0.8 As (100) surfaces Applied Physics Letters. 93. DOI: 10.1063/1.3033404  0.88
2008 Sonnet AM, Hinkle CL, Jivani MN, Chapman RA, Pollack GP, Wallace RM, Vogel EM. Performance enhancement of n -channel inversion type Inx Ga 1-x As metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer Applied Physics Letters. 93. DOI: 10.1063/1.2991340  0.88
2008 Hinkle CL, Sonnet AM, Milojevic M, Aguirre-Tostado FS, Kim HC, Kim J, Wallace RM, Vogel EM. Comparison of n -type and p -type GaAs oxide growth and its effects on frequency dispersion characteristics Applied Physics Letters. 93. DOI: 10.1063/1.2987428  0.88
2008 Aguirre-Tostado FS, Milojevic M, Choi KJ, Kim HC, Hinkle CL, Vogel EM, Kim J, Yang T, Xuan Y, Ye PD, Wallace RM. S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates Applied Physics Letters. 93. DOI: 10.1063/1.2961003  0.88
2008 Aguirre-Tostado FS, Milojevic M, Hinkle CL, Vogel EM, Wallace RM, McDonnell S, Hughes GJ. Indium stability on InGaAs during atomic H surface cleaning Applied Physics Letters. 92. DOI: 10.1063/1.2919047  0.88
2008 Hinkle CL, Sonnet AM, Vogel EM, McDonnell S, Hughes GJ, Milojevic M, Lee B, Aguirre-Tostado FS, Choi KJ, Kim HC, Kim J, Wallace RM. GaAs interfacial self-cleaning by atomic layer deposition Applied Physics Letters. 92. DOI: 10.1063/1.2883956  0.88
2007 Vogel EM, Sonnet AM, Hinkle CL. Characterization of electrically active interfacial defects in high-κ gate dielectrics Ecs Transactions. 11: 393-406. DOI: 10.1149/1.2779576  0.88
2007 Hinkle CL, Sonnet AM, Vogel EM, McDonnell S, Hughes GJ, Milojevic M, Lee B, Aguirre-Tostado FS, Choi KJ, Kim J, Wallace RM. Frequency dispersion reduction and bond conversion on n -type GaAs by in situ surface oxide removal and passivation Applied Physics Letters. 91. DOI: 10.1063/1.2801512  0.88
2006 Lucovsky G, Hinkle CL, Fulton CC, Stoute NA, Seo H, Lüning J. Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2 Radiation Physics and Chemistry. 75: 2097-2101. DOI: 10.1016/j.radphyschem.2005.07.062  0.88
2005 Lucovsky G, Lüning J, Stoute NA, Seo H, Hinkle CL, Ju B. Band edge traps at spectroscopically-detected O-atom vacancies in nanocrystalline ZrO2 and HfO2: An engineering solution for elimination of O-atom vacancy defects in non-crystalline ternary silicate alloys Ecs Transactions. 1: 381-392. DOI: 10.1149/1.2209287  0.88
2004 Niu D, Ashcraft RW, Hinkle C, Parsons GN. Effect of N 2 plasma on yttrium oxide and yttrium-oxynitride dielectrics Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 445-451. DOI: 10.1116/1.1666880  0.88
2004 Soares GV, Bastos KP, Pezzi RP, Miotti L, Driemeier C, Baumvol IJR, Hinkle C, Lucovsky G. Nitrogen bonding, stability, and transport in AION films on Si Applied Physics Letters. 84: 4992-4994. DOI: 10.1063/1.1763230  0.88
2004 Edge LF, Schlom DG, Brewer RT, Chabal YJ, Williams JR, Chambers SA, Hinkle C, Lucovsky G, Yang Y, Stemmer S, Copel M, Holländer B, Schubert J. Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon Applied Physics Letters. 84: 4629-4631. DOI: 10.1063/1.1759065  0.88
2004 Bastos KP, Pezzi RP, Miotti L, Soares GV, Driemeier C, Morais J, Baumvol IJR, Hinkle C, Lucovsky G. Thermal stability of plasma-nitrided aluminum oxide films on Si Applied Physics Letters. 84: 97-99. DOI: 10.1063/1.1638629  0.88
2004 Hinkle CL, Fulton C, Nemanich RJ, Lucovsky G. Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO 2 (ZrO2) layers sandwiched between thicker SiO2 layers Surface Science. 566: 1185-1189. DOI: 10.1016/j.susc.2004.06.084  0.88
2004 Lucovsky G, Rayner GB, Kang D, Hinkle CL, Hong JG. A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Zr(Hf) silicate alloys Surface Science. 566: 772-776. DOI: 10.1016/j.susc.2004.06.010  0.88
2004 Rayner GB, Kang D, Hinkle CL, Hong JG, Lucovsky G. Chemical phase separation in Zr silicate alloys: A spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity Microelectronic Engineering. 72: 304-309. DOI: 10.1016/j.mee.2004.01.008  0.88
2004 Hinkle CL, Fulton C, Nemanich RJ, Lucovsky G. A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices Microelectronic Engineering. 72: 257-262. DOI: 10.1016/j.mee.2003.12.047  0.88
2004 Hinkle CL, Fulton C, Nemanich RJ, Lucovsky G. Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO 2 layers sandwiched between thicker SiO2 layers Applied Surface Science. 234: 240-245. DOI: 10.1016/j.apsusc.2004.05.076  0.88
2004 Lucovsky G, Rayner GB, Kang D, Hinkle CL, Hong JG. A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf(Zr) silicate alloys Applied Surface Science. 234: 429-433. DOI: 10.1016/j.apsusc.2004.05.075  0.88
2003 Hinkle CL, Fulton C, Nemanich RJ, Lucovsky G. Resonant tunneling in stacked dielectrics: A novel approach for obtaining the electron tunneling mass-conduction band offset energy products for advanced gate dielectrics Extended Abstracts of International Workshop On Gate Insulator, Iwgi 2003. 80-85. DOI: 10.1109/IWGI.2003.159189  0.88
2003 Hinkle C, Lucovsky G. Remote plasma-assisted nitridation (RPN): Applications to Zr and Hf silicate alloys and Al2O3 Applied Surface Science. 216: 124-132. DOI: 10.1016/S0169-4332(03)00499-9  0.88
2002 Johnson RS, Hong JG, Hinkle C, Lucovsky G. Electron trapping in noncrystalline remote plasma deposited Hf-aluminate alloys for gate dielectric applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1126-1131. DOI: 10.1116/1.1481872  0.88
2002 Johnson RS, Hong JG, Hinkle C, Lucovsky G. Electron trapping in non-crystalline Ta- and Hf-aluminates for gate dielectric applications in aggressively scaled silicon devices Solid-State Electronics. 46: 1799-1805. DOI: 10.1016/S0038-1101(02)00152-1  0.88
1998 Hinds BJ, Wang F, Wolfe DM, Hinkle CL, Lucovsky G. Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 2171-2176.  0.88
1998 Hinds BJ, Wang F, Wolfe DM, Hinkle CL, Lucovsky G. Study of SiOx decomposition kinetics and formation of Si nanocrystals in an SiO2 matrix Journal of Non-Crystalline Solids. 227: 507-512.  0.88
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