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Shanshan Liu, Ph.D. - Publications

Affiliations: 
2009 Illinois Institute of Technology, Chicago, IL, United States 
Area:
Condensed matter experiment, X-ray physics, X-ray absorption spectroscopy, Powder diffraction, Materials science
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30 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2024 Zheng D, Cao S, Li D, Wu Y, Duan P, Liu S, Li X, Zhang X, Chen Y. Fabrication and characterization of chitosan/anthocyanin intelligent packaging film fortified by cellulose nanocrystal for shrimp preservation and visual freshness monitoring. International Journal of Biological Macromolecules. 264: 130692. PMID 38460646 DOI: 10.1016/j.ijbiomac.2024.130692  0.422
2023 Zhu Y, Cao J, Liu S, Loh KP. Heteroepitaxial Growth of Black Phosphorus on Tin Monosulfide. Nano Letters. PMID 38147351 DOI: 10.1021/acs.nanolett.3c04372  0.307
2023 Wang X, Zhang H, Zhang X, Shen C, Liu M, Liu S, Han Y, He T. A comparison study on effects of polyglycerols on physical properties of alginate films. International Journal of Biological Macromolecules. 254: 127879. PMID 37944722 DOI: 10.1016/j.ijbiomac.2023.127879  0.396
2016 Qi F, Li Y, Wang Y, Wang Y, Liu S, Zhao X. Ag-Doped g-C3N4 film electrode: fabrication, characterization and photoelectrocatalysis property Rsc Advances. 6: 81378-81385. DOI: 10.1039/C6Ra17613E  0.354
2015 Ma B, Liu S, Hu Z, Narayanan M, Balachandran U. Effect of manganese oxide insertion layer on the dielectric and ferroelectric properties of Pb0.92La0.08Zr0.52Ti0.48O3 films grown by a sol-gel process Materials Research Bulletin. 67: 134-139. DOI: 10.1016/J.Materresbull.2015.03.011  0.699
2014 Hu Z, Ma B, Liu S, Narayanan M, Balachandran U. Ceramic dielectric film capacitors fabricated on aluminum foils by chemical solution deposition Materials Research Bulletin. 52: 189-193. DOI: 10.1016/J.Materresbull.2013.11.030  0.73
2014 Liu S, Odette GR, Segre CU. Evidence for core-Shell nanoclusters in oxygen dispersion strengthened steels measured using X-Ray absorption spectroscopy Journal of Nuclear Materials. 445: 50-56. DOI: 10.1016/J.Jnucmat.2013.10.042  0.567
2014 Hu Z, Ma B, Liu S, Narayanan M, Balachandran U. Relaxor behavior and energy storage performance of ferroelectric PLZT thin films with different Zr/Ti ratios Ceramics International. 40: 557-562. DOI: 10.1016/J.Ceramint.2013.05.139  0.741
2013 Tong S, Ma B, Narayanan M, Liu S, Koritala R, Balachandran U, Shi D. Lead lanthanum zirconate titanate ceramic thin films for energy storage. Acs Applied Materials & Interfaces. 5: 1474-80. PMID 23373765 DOI: 10.1021/Am302985U  0.72
2013 Balachandran U, Narayanan M, Liu S, Ma B. Development of film-on-foil ceramic dielectrics for embedded capacitors for power inverters in electric drive vehicles Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.05Da10  0.721
2013 Ma B, Liu S, Tong S, Narayanan M, Koritala RE, Hu Z, Balachandran U. Residual stress of (Pb0.92La0.08)(Zr 0.52Ti0.48)O3 films grown by a sol-gel process Smart Materials and Structures. 22. DOI: 10.1088/0964-1726/22/5/055019  0.747
2013 Ma B, Hu Z, Liu S, Tong S, Narayanan M, Koritala RE, Balachandran U. Temperature-dependent dielectric nonlinearity of relaxor ferroelectric Pb0.92La0.08Zr0.52Ti0.48O 3 thin films Applied Physics Letters. 102. DOI: 10.1063/1.4807665  0.698
2013 Liu S, Ma B, Narayanan M, Tong S, Koritala RE, Hu Z, Balachandran U. Dielectric properties of lead lanthanum zirconate titanate thin films with and without ZrO2 insertion layers Journal of Applied Physics. 113. DOI: 10.1063/1.4804170  0.695
2013 Ma B, Hu Z, Liu S, Narayanan M, Balachandran U(. Temperature dependent polarization switching properties of ferroelectric Pb0.92La0.08Zr0.52Ti0.48Oδ films grown on nickel foils Applied Physics Letters. 102: 72901. DOI: 10.1063/1.4793304  0.702
2013 Narayanan M, Tong S, Liu S, Ma B, Balachandran U. Estimation of intrinsic contribution to dielectric response of Pb0.92La0.08Zr0.52Ti0.48O3 thin films at low frequencies using high bias fields Applied Physics Letters. 102: 62906. DOI: 10.1063/1.4792529  0.661
2013 Tong S, Ma B, Narayanan M, Liu S, Balachandran U, Shi D. Dielectric behavior of lead lanthanum zirconate titanate thin films deposited on different electrodes/substrates Materials Letters. 106: 405-408. DOI: 10.1016/J.Matlet.2013.05.068  0.728
2013 Tong S, Narayanan M, Ma B, Liu S, Koritala RE, Balachandran U, Shi D. Effect of lanthanum content and substrate strain on structural and electrical properties of lead lanthanum zirconate titanate thin films Materials Chemistry and Physics. 140: 427-430. DOI: 10.1016/J.Matchemphys.2013.03.067  0.724
2013 Ma B, Chao S, Narayanan M, Liu S, Tong S, Koritala RE, Balachandran U. Dense PLZT films grown on nickel substrates by PVP-modified sol–gel method Journal of Materials Science. 48: 1180-1185. DOI: 10.1007/S10853-012-6857-5  0.737
2012 Ma B, Narayanan M, Liu S, Tong S, Balachandran U(. Development of High Dielectric Strength Ceramic Film Capacitors for Advanced Power Electronics Journal of Microelectronics and Electronic Packaging. 2012: 609-616. DOI: 10.4071/Isom-2012-Wa33  0.759
2012 Liu S, Ma B, Narayanan M, Tong S, Koritala R, Balachandran U. Microstructure and electrical properties of LaNiO3 thin films by RF sputtering for the growth of (Pb,La)(Zr,Ti)O3 films on silicon and nickel substrates Journal of Vacuum Science and Technology. 30: 61505. DOI: 10.1116/1.4752084  0.754
2012 Narayanan M, Balachandran U, Stoupin S, Ma B, Tong S, Chao S, Liu S. Dielectric properties and spectroscopy of large-aspect-ratio ferroelectric thin-film heterostructures Journal of Physics D: Applied Physics. 45. DOI: 10.1088/0022-3727/45/33/335401  0.785
2012 Liu S, Ma B, Narayanan M, Chao S, Koritala R, Balachandran U. Improved properties of barium strontium titanate thin films grown on copper foils by pulsed laser deposition using a self-buffered layer Journal of Physics D. 45: 175304. DOI: 10.1088/0022-3727/45/17/175304  0.727
2012 Ma B, Liu S, Tong S, Narayanan M, Balachandran U(. Enhanced dielectric properties of Pb0.92La0.08 Zr0.52Ti0.48O3 films with compressive stress Journal of Applied Physics. 112: 114117. DOI: 10.1063/1.4768926  0.76
2012 Narayanan M, Tong S, Ma B, Liu S, Balachandran U. Modified Johnson model for ferroelectric lead lanthanum zirconate titanate at very high fields and below Curie temperature Applied Physics Letters. 100: 22907. DOI: 10.1063/1.3676668  0.66
2012 Narayanan M, Pan M, Liu S, Tong S, Hong S, Ma B, Balachandran U. Effect of stress state on the domain configuration and switching behavior in ferroelectric thin films Rsc Advances. 2: 11901-11907. DOI: 10.1039/C2Ra20678A  0.681
2012 Chao S, Ma B, Liu S, Narayanan M, Balachandran U. Effects of pyrolysis conditions on dielectric properties of PLZT films derived from a polyvinylpyrrolidone-modified sol-gel process § Materials Research Bulletin. 47: 907-911. DOI: 10.1016/J.Materresbull.2011.09.012  0.735
2011 Ma B, Tong S, Narayanan M, Liu S, Chao S, Balachandran U. Fabrication and dielectric property of ferroelectric PLZT films grown on metal foils Materials Research Bulletin. 46: 1124-1129. DOI: 10.1016/J.Materresbull.2011.02.047  0.689
2011 Tong S, Narayanan M, Ma B, Koritala R, Liu S, Balachandran U(, Shi D. Effect of dead layer and strain on the diffuse phase transition of PLZT relaxor thin films Acta Materialia. 59: 1309-1316. DOI: 10.1016/J.Actamat.2010.10.063  0.729
2009 Odette GR, Cunningham NJ, Marquis EA, Lozano-Perez S, De Castro V, Hosemann P, Stergar E, Liu S, Segre CU. Atom-probe tomography, small angle neutron scattering, transmission electron microscopy, positron annihilation spectroscopy and x-ray absorption spectroscopy characterization of nano-scale features in nanostructured ferritic alloys Microscopy and Microanalysis. 15: 244-245. DOI: 10.1017/S1431927609099553  0.522
2009 Liu S, Olive D, Terry J, Segre CU. An X-ray absorption spectroscopy study of Mo oxidation in Pb at elevated temperatures Journal of Nuclear Materials. 392: 259-263. DOI: 10.1016/J.Jnucmat.2009.03.005  0.602
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