Year |
Citation |
Score |
2021 |
Mohabir AT, Aziz D, Brummer AC, Taylor KE, Vogel EM, Filler MA. Bottom-up nanoscale patterning and selective deposition on silicon nanowires. Nanotechnology. 33. PMID 34808600 DOI: 10.1088/1361-6528/ac3bed |
0.311 |
|
2020 |
Boyuk DS, Hu W, Hui HY, Filler MA. Surface plasmon driven near- and midinfrared photoconductivity in ligand-free ITO nanocrystal films Journal of Vacuum Science and Technology. 38: 22420. DOI: 10.1116/1.5139310 |
0.359 |
|
2019 |
Mohabir AT, Tutuncuoglu G, Weiss T, Vogel EM, Filler MA. Bottom-Up Masking of Si/Ge Surfaces and Nanowire Heterostructures via Surface Initiated Polymerization and Selective Etching. Acs Nano. PMID 31854980 DOI: 10.1021/Acsnano.9B04363 |
0.475 |
|
2019 |
Yuan W, Tutuncuoglu G, Mohabir A, Liu L, Feldman LC, Filler MA, Shan JW. Contactless Electrical and Structural Characterization of Semiconductor Nanowires with Axially Modulated Doping Profiles. Small (Weinheim An Der Bergstrasse, Germany). e1805140. PMID 30884159 DOI: 10.1002/Smll.201805140 |
0.333 |
|
2019 |
Jung L, Pries J, Maß TWW, Lewin M, Boyuk DS, Mohabir AT, Filler MA, Wuttig M, Taubner T. Quantification of Carrier Density Gradients along Axially Doped Silicon Nanowires Using Infrared Nanoscopy Acs Photonics. 6: 1744-1754. DOI: 10.1021/Acsphotonics.9B00466 |
0.362 |
|
2018 |
Tervo EJ, Boyuk DS, Cola BA, Zhang ZM, Filler MA. Sub-diffractional waveguiding by mid-infrared plasmonic resonators in semiconductor nanowires. Nanoscale. PMID 29537041 DOI: 10.1039/C8Nr00701B |
0.33 |
|
2018 |
Hu W, Filler MA. Enhanced photodesorption from near- and mid-infrared plasmonic nanocrystal thin films Journal of Vacuum Science and Technology. 36: 61401. DOI: 10.1116/1.5046381 |
0.312 |
|
2017 |
Hu W, Guo S, Gaul JP, Boebinger MG, McDowell MT, Filler MA. Reversible Tuning of the Surface Plasmon Resonance of Indium Tin Oxide Nanocrystals by Gas-Phase Oxidation and Reduction Journal of Physical Chemistry C. 121: 15970-15976. DOI: 10.1021/Acs.Jpcc.7B02733 |
0.394 |
|
2017 |
Hui HY, Mata Mdl, Arbiol J, Filler MA. Low-Temperature Growth of Axial Si/Ge Nanowire Heterostructures Enabled by Trisilane Chemistry of Materials. 29: 3397-3402. DOI: 10.1021/Acs.Chemmater.6B03952 |
0.407 |
|
2016 |
Sivaram SV, Hui HY, de la Mata M, Arbiol J, Filler MA. Surface Hydrogen Enables Sub-Eutectic Vapor-Liquid-Solid Semiconductor Nanowire Growth. Nano Letters. PMID 27347747 DOI: 10.1021/Acs.Nanolett.6B01640 |
0.342 |
|
2016 |
Boyuk DS, Chou LW, Filler MA. Strong Near-Field Coupling of Plasmonic Resonators Embedded in Si Nanowires Acs Photonics. 3: 184-189. DOI: 10.1021/Acsphotonics.5B00581 |
0.394 |
|
2015 |
Hui HY, Filler MA. Solid-Liquid-Vapor Etching of Semiconductor Nanowires. Nano Letters. 15: 6939-45. PMID 26383971 DOI: 10.1021/Acs.Nanolett.5B02880 |
0.342 |
|
2015 |
Sivaram SV, Shin N, Chou LW, Filler MA. Direct Observation of Transient Surface Species during Ge Nanowire Growth and Their Influence on Growth Stability. Journal of the American Chemical Society. 137: 9861-9. PMID 26147949 DOI: 10.1021/Jacs.5B03818 |
0.499 |
|
2015 |
Chou LW, Boyuk DS, Filler MA. Correction to Optically abrupt localized surface plasmon resonances in Si nanowires by mitigation of carrier density gradients. Acs Nano. 9: 5625. PMID 25971152 DOI: 10.1021/Acsnano.5B02854 |
0.447 |
|
2015 |
Akin C, Yi J, Feldman LC, Durand C, Hus SM, Li AP, Filler MA, Shan JW. Contactless Determination of Electrical Conductivity of One-Dimensional Nanomaterials by Solution-Based Electro-orientation Spectroscopy. Acs Nano. 9: 5405-12. PMID 25941841 DOI: 10.1021/Acsnano.5B01170 |
0.343 |
|
2015 |
Chou LW, Boyuk DS, Filler MA. Optically abrupt localized surface plasmon resonances in si nanowires by mitigation of carrier density gradients. Acs Nano. 9: 1250-6. PMID 25612192 DOI: 10.1021/Nn504974Z |
0.433 |
|
2014 |
Shin N, Chi M, Filler MA. Interplay between defect propagation and surface hydrogen in silicon nanowire kinking superstructures. Acs Nano. 8: 3829-35. PMID 24606150 DOI: 10.1021/Nn500598D |
0.49 |
|
2014 |
Musin IR, Shin N, Filler MA. Diameter modulation as a route to probe the vapour-liquid-solid growth kinetics of semiconductor nanowires Journal of Materials Chemistry C. 2: 3285-3291. DOI: 10.1039/C3Tc32038C |
0.307 |
|
2014 |
Chou LW, Near RD, Boyuk DS, Filler MA. Influence of dielectric anisotropy on the absorption properties of localized surface plasmon resonances embedded in Si nanowires Journal of Physical Chemistry C. 118: 5494-5500. DOI: 10.1021/Jp501452Q |
0.436 |
|
2013 |
Shin N, Chi M, Filler MA. Sidewall morphology-dependent formation of multiple twins in Si nanowires. Acs Nano. 7: 8206-13. PMID 23944902 DOI: 10.1021/Nn4036798 |
0.312 |
|
2013 |
Chou LW, Filler MA. Engineering multimodal localized surface plasmon resonances in silicon nanowires. Angewandte Chemie (International Ed. in English). 52: 8079-83. PMID 23766089 DOI: 10.1002/Anie.201301468 |
0.411 |
|
2013 |
Shin N, Chi M, Howe JY, Filler MA. Rational defect introduction in silicon nanowires. Nano Letters. 13: 1928-33. PMID 23577694 DOI: 10.1021/Nl3042728 |
0.314 |
|
2013 |
Chou LW, Filler MA. Near-field coupling between plasmonic resonators in Si nanowires Proceedings of Spie - the International Society For Optical Engineering. 8809. DOI: 10.1117/12.2024216 |
0.462 |
|
2013 |
Musin IR, Boyuk DS, Filler MA. Surface chemistry controlled diameter-modulated semiconductor nanowire superstructures Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4792660 |
0.341 |
|
2013 |
Chou L, Filler MA. Inside Back Cover: Engineering Multimodal Localized Surface Plasmon Resonances in Silicon Nanowires (Angew. Chem. Int. Ed. 31/2013) Angewandte Chemie. 52: 8169-8169. DOI: 10.1002/Anie.201304865 |
0.411 |
|
2013 |
Chou L, Filler MA. Innenrücktitelbild: Engineering Multimodal Localized Surface Plasmon Resonances in Silicon Nanowires (Angew. Chem. 31/2013) Angewandte Chemie. 125: 8327-8327. DOI: 10.1002/Ange.201304865 |
0.412 |
|
2012 |
Chou LW, Shin N, Sivaram SV, Filler MA. Tunable mid-infrared localized surface plasmon resonances in silicon nanowires. Journal of the American Chemical Society. 134: 16155-8. PMID 22985223 DOI: 10.1021/Ja3075902 |
0.415 |
|
2012 |
Musin IR, Filler MA. Chemical control of semiconductor nanowire kinking and superstructure. Nano Letters. 12: 3363-8. PMID 22646311 DOI: 10.1021/Nl204065P |
0.365 |
|
2012 |
Shin N, Filler MA. Controlling silicon nanowire growth direction via surface chemistry. Nano Letters. 12: 2865-70. PMID 22594623 DOI: 10.1021/Nl300461A |
0.412 |
|
2009 |
Plass KE, Filler MA, Spurgeon JM, Kayes BM, Maldonado S, Brunschwig BS, Atwater HA, Lewis NS. Flexible polymer-embedded Si wire arrays Advanced Materials. 21: 325-328. DOI: 10.1002/Adma.200802006 |
0.324 |
|
2008 |
Putnam MC, Filler MA, Kayes BM, Kelzenberg MD, Guan Y, Lewis NS, Eiler JM, Atwater HA. Secondary ion mass spectrometry of vapor-liquid-solid grown, Au-catalyzed, Si wires. Nano Letters. 8: 3109-13. PMID 18767881 DOI: 10.1021/Nl801234Y |
0.379 |
|
2008 |
Kelzenberg MD, Turner-Evans DB, Kayes BM, Filler MA, Putnam MC, Lewis NS, Atwater HA. Photovoltaic measurements in single-nanowire silicon solar cells. Nano Letters. 8: 710-4. PMID 18269257 DOI: 10.1021/Nl072622P |
0.389 |
|
2007 |
Maiolo JR, Kayes BM, Filler MA, Putnam MC, Kelzenberg MD, Atwater HA, Lewis NS. High aspect ratio silicon wire array photoelectrochemical cells. Journal of the American Chemical Society. 129: 12346-7. PMID 17892292 DOI: 10.1021/Ja074897C |
0.321 |
|
2007 |
Kayes BM, Filler MA, Putnam MC, Kelzenberg MD, Lewis NS, Atwater HA. Growth of vertically aligned Si wire arrays over large areas (>1 cm2) with Au and Cu catalysts Applied Physics Letters. 91. DOI: 10.1063/1.2779236 |
0.346 |
|
2007 |
Keung AJ, Filler MA, Bent SF. Thermal control of amide product distributions at the Ge(100)-2×1 surface Journal of Physical Chemistry C. 111: 411-419. DOI: 10.1021/Jp065278D |
0.621 |
|
2007 |
Filler MA, Musgrave CB, Bent SF. Carbon-oxygen coupling in the reaction of formaldehyde on Ge(100)-2×1 Journal of Physical Chemistry C. 111: 1739-1746. DOI: 10.1021/Jp064820V |
0.642 |
|
2006 |
Filler MA, Keung AJ, Porter DW, Bent SF. Formation of surface-bound acyl groups by reaction of acyl halides on ge(100)-2x1. The Journal of Physical Chemistry. B. 110: 4115-24. PMID 16509705 DOI: 10.1021/Jp055685+ |
0.647 |
|
2006 |
Filler MA, Van Deventer JA, Keung AJ, Bent SF. Carboxylic acid chemistry at the Ge(100)-2 x 1 interface: bidentate bridging structure formation on a semiconductor surface. Journal of the American Chemical Society. 128: 770-9. PMID 16417366 DOI: 10.1021/Ja0549502 |
0.628 |
|
2005 |
Kim A, Filler MA, Kim S, Bent SF. Ethylenediamine on Ge(100)-2 x 1: the role of interdimer interactions. The Journal of Physical Chemistry. B. 109: 19817-22. PMID 16853562 DOI: 10.1021/Jp054340O |
0.641 |
|
2005 |
Kim A, Filler MA, Kim S, Bent SF. Layer-by-layer growth on Ge(100) via spontaneous urea coupling reactions. Journal of the American Chemical Society. 127: 6123-32. PMID 15839714 DOI: 10.1021/Ja042751X |
0.596 |
|
2005 |
Keung AJ, Filler MA, Porter DW, Bent SF. Tertiary amide chemistry at the Ge(1 0 0)-2 × 1 surface Surface Science. 599: 41-54. DOI: 10.1016/J.Susc.2005.09.035 |
0.623 |
|
2003 |
Filler MA, Mui C, Musgrave CB, Bent SF. Competition and selectivity in the reaction of nitriles on ge(100)-2x1. Journal of the American Chemical Society. 125: 4928-36. PMID 12696912 DOI: 10.1021/Ja027887E |
0.744 |
|
2003 |
Mui C, Filler MA, Bent SF, Musgrave CB. Reactions of nitriles at semiconductor surfaces Journal of Physical Chemistry B. 107: 12256-12267. DOI: 10.1021/Jp034864T |
0.757 |
|
2003 |
Wang GT, Mui C, Tannaci JF, Filler MA, Musgrave CB, Bent SF. Reactions of cyclic aliphatic and aromatic amines on Ge(100)-2×1 and Si(100)-2×1 Journal of Physical Chemistry B. 107: 4982-4996. DOI: 10.1021/Jp026864J |
0.73 |
|
2003 |
Filler MA, Bent SF. The surface as molecular reagent: Organic chemistry at the semiconductor interface Progress in Surface Science. 73. DOI: 10.1016/S0079-6816(03)00035-2 |
0.626 |
|
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