Michael A. Filler, Ph.D. - Publications

Affiliations: 
2006 Stanford University, Palo Alto, CA 
Area:
surface and interfacial chemistry and materials synthesis

45 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Mohabir AT, Aziz D, Brummer AC, Taylor KE, Vogel EM, Filler MA. Bottom-up nanoscale patterning and selective deposition on silicon nanowires. Nanotechnology. 33. PMID 34808600 DOI: 10.1088/1361-6528/ac3bed  0.311
2020 Boyuk DS, Hu W, Hui HY, Filler MA. Surface plasmon driven near- and midinfrared photoconductivity in ligand-free ITO nanocrystal films Journal of Vacuum Science and Technology. 38: 22420. DOI: 10.1116/1.5139310  0.359
2019 Mohabir AT, Tutuncuoglu G, Weiss T, Vogel EM, Filler MA. Bottom-Up Masking of Si/Ge Surfaces and Nanowire Heterostructures via Surface Initiated Polymerization and Selective Etching. Acs Nano. PMID 31854980 DOI: 10.1021/Acsnano.9B04363  0.475
2019 Yuan W, Tutuncuoglu G, Mohabir A, Liu L, Feldman LC, Filler MA, Shan JW. Contactless Electrical and Structural Characterization of Semiconductor Nanowires with Axially Modulated Doping Profiles. Small (Weinheim An Der Bergstrasse, Germany). e1805140. PMID 30884159 DOI: 10.1002/Smll.201805140  0.333
2019 Jung L, Pries J, Maß TWW, Lewin M, Boyuk DS, Mohabir AT, Filler MA, Wuttig M, Taubner T. Quantification of Carrier Density Gradients along Axially Doped Silicon Nanowires Using Infrared Nanoscopy Acs Photonics. 6: 1744-1754. DOI: 10.1021/Acsphotonics.9B00466  0.362
2018 Tervo EJ, Boyuk DS, Cola BA, Zhang ZM, Filler MA. Sub-diffractional waveguiding by mid-infrared plasmonic resonators in semiconductor nanowires. Nanoscale. PMID 29537041 DOI: 10.1039/C8Nr00701B  0.33
2018 Hu W, Filler MA. Enhanced photodesorption from near- and mid-infrared plasmonic nanocrystal thin films Journal of Vacuum Science and Technology. 36: 61401. DOI: 10.1116/1.5046381  0.312
2017 Hu W, Guo S, Gaul JP, Boebinger MG, McDowell MT, Filler MA. Reversible Tuning of the Surface Plasmon Resonance of Indium Tin Oxide Nanocrystals by Gas-Phase Oxidation and Reduction Journal of Physical Chemistry C. 121: 15970-15976. DOI: 10.1021/Acs.Jpcc.7B02733  0.394
2017 Hui HY, Mata Mdl, Arbiol J, Filler MA. Low-Temperature Growth of Axial Si/Ge Nanowire Heterostructures Enabled by Trisilane Chemistry of Materials. 29: 3397-3402. DOI: 10.1021/Acs.Chemmater.6B03952  0.407
2016 Sivaram SV, Hui HY, de la Mata M, Arbiol J, Filler MA. Surface Hydrogen Enables Sub-Eutectic Vapor-Liquid-Solid Semiconductor Nanowire Growth. Nano Letters. PMID 27347747 DOI: 10.1021/Acs.Nanolett.6B01640  0.342
2016 Boyuk DS, Chou LW, Filler MA. Strong Near-Field Coupling of Plasmonic Resonators Embedded in Si Nanowires Acs Photonics. 3: 184-189. DOI: 10.1021/Acsphotonics.5B00581  0.394
2015 Hui HY, Filler MA. Solid-Liquid-Vapor Etching of Semiconductor Nanowires. Nano Letters. 15: 6939-45. PMID 26383971 DOI: 10.1021/Acs.Nanolett.5B02880  0.342
2015 Sivaram SV, Shin N, Chou LW, Filler MA. Direct Observation of Transient Surface Species during Ge Nanowire Growth and Their Influence on Growth Stability. Journal of the American Chemical Society. 137: 9861-9. PMID 26147949 DOI: 10.1021/Jacs.5B03818  0.499
2015 Chou LW, Boyuk DS, Filler MA. Correction to Optically abrupt localized surface plasmon resonances in Si nanowires by mitigation of carrier density gradients. Acs Nano. 9: 5625. PMID 25971152 DOI: 10.1021/Acsnano.5B02854  0.447
2015 Akin C, Yi J, Feldman LC, Durand C, Hus SM, Li AP, Filler MA, Shan JW. Contactless Determination of Electrical Conductivity of One-Dimensional Nanomaterials by Solution-Based Electro-orientation Spectroscopy. Acs Nano. 9: 5405-12. PMID 25941841 DOI: 10.1021/Acsnano.5B01170  0.343
2015 Chou LW, Boyuk DS, Filler MA. Optically abrupt localized surface plasmon resonances in si nanowires by mitigation of carrier density gradients. Acs Nano. 9: 1250-6. PMID 25612192 DOI: 10.1021/Nn504974Z  0.433
2014 Shin N, Chi M, Filler MA. Interplay between defect propagation and surface hydrogen in silicon nanowire kinking superstructures. Acs Nano. 8: 3829-35. PMID 24606150 DOI: 10.1021/Nn500598D  0.49
2014 Musin IR, Shin N, Filler MA. Diameter modulation as a route to probe the vapour-liquid-solid growth kinetics of semiconductor nanowires Journal of Materials Chemistry C. 2: 3285-3291. DOI: 10.1039/C3Tc32038C  0.307
2014 Chou LW, Near RD, Boyuk DS, Filler MA. Influence of dielectric anisotropy on the absorption properties of localized surface plasmon resonances embedded in Si nanowires Journal of Physical Chemistry C. 118: 5494-5500. DOI: 10.1021/Jp501452Q  0.436
2013 Shin N, Chi M, Filler MA. Sidewall morphology-dependent formation of multiple twins in Si nanowires. Acs Nano. 7: 8206-13. PMID 23944902 DOI: 10.1021/Nn4036798  0.312
2013 Chou LW, Filler MA. Engineering multimodal localized surface plasmon resonances in silicon nanowires. Angewandte Chemie (International Ed. in English). 52: 8079-83. PMID 23766089 DOI: 10.1002/Anie.201301468  0.411
2013 Shin N, Chi M, Howe JY, Filler MA. Rational defect introduction in silicon nanowires. Nano Letters. 13: 1928-33. PMID 23577694 DOI: 10.1021/Nl3042728  0.314
2013 Chou LW, Filler MA. Near-field coupling between plasmonic resonators in Si nanowires Proceedings of Spie - the International Society For Optical Engineering. 8809. DOI: 10.1117/12.2024216  0.462
2013 Musin IR, Boyuk DS, Filler MA. Surface chemistry controlled diameter-modulated semiconductor nanowire superstructures Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4792660  0.341
2013 Chou L, Filler MA. Inside Back Cover: Engineering Multimodal Localized Surface Plasmon Resonances in Silicon Nanowires (Angew. Chem. Int. Ed. 31/2013) Angewandte Chemie. 52: 8169-8169. DOI: 10.1002/Anie.201304865  0.411
2013 Chou L, Filler MA. Innenrücktitelbild: Engineering Multimodal Localized Surface Plasmon Resonances in Silicon Nanowires (Angew. Chem. 31/2013) Angewandte Chemie. 125: 8327-8327. DOI: 10.1002/Ange.201304865  0.412
2012 Chou LW, Shin N, Sivaram SV, Filler MA. Tunable mid-infrared localized surface plasmon resonances in silicon nanowires. Journal of the American Chemical Society. 134: 16155-8. PMID 22985223 DOI: 10.1021/Ja3075902  0.415
2012 Musin IR, Filler MA. Chemical control of semiconductor nanowire kinking and superstructure. Nano Letters. 12: 3363-8. PMID 22646311 DOI: 10.1021/Nl204065P  0.365
2012 Shin N, Filler MA. Controlling silicon nanowire growth direction via surface chemistry. Nano Letters. 12: 2865-70. PMID 22594623 DOI: 10.1021/Nl300461A  0.412
2009 Plass KE, Filler MA, Spurgeon JM, Kayes BM, Maldonado S, Brunschwig BS, Atwater HA, Lewis NS. Flexible polymer-embedded Si wire arrays Advanced Materials. 21: 325-328. DOI: 10.1002/Adma.200802006  0.324
2008 Putnam MC, Filler MA, Kayes BM, Kelzenberg MD, Guan Y, Lewis NS, Eiler JM, Atwater HA. Secondary ion mass spectrometry of vapor-liquid-solid grown, Au-catalyzed, Si wires. Nano Letters. 8: 3109-13. PMID 18767881 DOI: 10.1021/Nl801234Y  0.379
2008 Kelzenberg MD, Turner-Evans DB, Kayes BM, Filler MA, Putnam MC, Lewis NS, Atwater HA. Photovoltaic measurements in single-nanowire silicon solar cells. Nano Letters. 8: 710-4. PMID 18269257 DOI: 10.1021/Nl072622P  0.389
2007 Maiolo JR, Kayes BM, Filler MA, Putnam MC, Kelzenberg MD, Atwater HA, Lewis NS. High aspect ratio silicon wire array photoelectrochemical cells. Journal of the American Chemical Society. 129: 12346-7. PMID 17892292 DOI: 10.1021/Ja074897C  0.321
2007 Kayes BM, Filler MA, Putnam MC, Kelzenberg MD, Lewis NS, Atwater HA. Growth of vertically aligned Si wire arrays over large areas (>1 cm2) with Au and Cu catalysts Applied Physics Letters. 91. DOI: 10.1063/1.2779236  0.346
2007 Keung AJ, Filler MA, Bent SF. Thermal control of amide product distributions at the Ge(100)-2×1 surface Journal of Physical Chemistry C. 111: 411-419. DOI: 10.1021/Jp065278D  0.621
2007 Filler MA, Musgrave CB, Bent SF. Carbon-oxygen coupling in the reaction of formaldehyde on Ge(100)-2×1 Journal of Physical Chemistry C. 111: 1739-1746. DOI: 10.1021/Jp064820V  0.642
2006 Filler MA, Keung AJ, Porter DW, Bent SF. Formation of surface-bound acyl groups by reaction of acyl halides on ge(100)-2x1. The Journal of Physical Chemistry. B. 110: 4115-24. PMID 16509705 DOI: 10.1021/Jp055685+  0.647
2006 Filler MA, Van Deventer JA, Keung AJ, Bent SF. Carboxylic acid chemistry at the Ge(100)-2 x 1 interface: bidentate bridging structure formation on a semiconductor surface. Journal of the American Chemical Society. 128: 770-9. PMID 16417366 DOI: 10.1021/Ja0549502  0.628
2005 Kim A, Filler MA, Kim S, Bent SF. Ethylenediamine on Ge(100)-2 x 1: the role of interdimer interactions. The Journal of Physical Chemistry. B. 109: 19817-22. PMID 16853562 DOI: 10.1021/Jp054340O  0.641
2005 Kim A, Filler MA, Kim S, Bent SF. Layer-by-layer growth on Ge(100) via spontaneous urea coupling reactions. Journal of the American Chemical Society. 127: 6123-32. PMID 15839714 DOI: 10.1021/Ja042751X  0.596
2005 Keung AJ, Filler MA, Porter DW, Bent SF. Tertiary amide chemistry at the Ge(1 0 0)-2 × 1 surface Surface Science. 599: 41-54. DOI: 10.1016/J.Susc.2005.09.035  0.623
2003 Filler MA, Mui C, Musgrave CB, Bent SF. Competition and selectivity in the reaction of nitriles on ge(100)-2x1. Journal of the American Chemical Society. 125: 4928-36. PMID 12696912 DOI: 10.1021/Ja027887E  0.744
2003 Mui C, Filler MA, Bent SF, Musgrave CB. Reactions of nitriles at semiconductor surfaces Journal of Physical Chemistry B. 107: 12256-12267. DOI: 10.1021/Jp034864T  0.757
2003 Wang GT, Mui C, Tannaci JF, Filler MA, Musgrave CB, Bent SF. Reactions of cyclic aliphatic and aromatic amines on Ge(100)-2×1 and Si(100)-2×1 Journal of Physical Chemistry B. 107: 4982-4996. DOI: 10.1021/Jp026864J  0.73
2003 Filler MA, Bent SF. The surface as molecular reagent: Organic chemistry at the semiconductor interface Progress in Surface Science. 73. DOI: 10.1016/S0079-6816(03)00035-2  0.626
Show low-probability matches.