Year |
Citation |
Score |
2008 |
Green JE, Wong SJ, Heath JR. Hall mobility measurements and chemical stability of ultrathin, methylated Si(111)-on-insulator films Journal of Physical Chemistry C. 112: 5185-5189. DOI: 10.1021/Jp710482T |
0.505 |
|
2007 |
Green JE, Choi JW, Boukai A, Bunimovich Y, Johnston-Halperin E, DeIonno E, Luo Y, Sheriff BA, Xu K, Shin YS, Tseng HR, Stoddart JF, Heath JR. A 160-kilobit molecular electronic memory patterned at 10(11) bits per square centimetre. Nature. 445: 414-7. PMID 17251976 DOI: 10.1038/Nature05462 |
0.532 |
|
2007 |
Xu K, Green JE, Heath JR, Remade F, Levine RD. The emergence of a coupled quantum dot array in a doped silicon nanowire gated by ultrahigh density top gate electrodes Journal of Physical Chemistry C. 111: 17852-17860. DOI: 10.1021/Jp071353O |
0.591 |
|
2006 |
Jung GY, Johnston-Halperin E, Wu W, Yu Z, Wang SY, Tong WM, Li Z, Green JE, Sheriff BA, Boukai A, Bunimovich Y, Heath JR, Williams RS. Circuit fabrication at 17 nm half-pitch by nanoimprint lithography. Nano Letters. 6: 351-4. PMID 16522021 DOI: 10.1021/Nl052110F |
0.629 |
|
2005 |
Beckman R, Johnston-Halperin E, Luo Y, Green JE, Heath JR. Bridging dimensions: demultiplexing ultrahigh-density nanowire circuits. Science (New York, N.Y.). 310: 465-8. PMID 16195426 DOI: 10.1126/Science.1114757 |
0.732 |
|
2004 |
Beckman RA, Johnston-Halperin E, Melosh NA, Luo Y, Green JE, Heath JR. Fabrication of conducting Si nanowire arrays Journal of Applied Physics. 96: 5921-5923. DOI: 10.1063/1.1801155 |
0.743 |
|
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