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Michael J. Hale, Ph.D. - Publications

Affiliations: 
2004 University of California, San Diego, La Jolla, CA 
Area:
STM/STS of gate oxides on compound semiconductors and adsorbates on organic semiconductor
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11 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2007 Winn DL, Hale MJ, Grassman TJ, Sexton JZ, Kummel AC, Passlack M, Droopad R. Electronic properties of adsorbates on GaAs(001)-c(2x8)/(2x4). The Journal of Chemical Physics. 127: 134705. PMID 17919041 DOI: 10.1063/1.2786097  0.688
2007 Winn DL, Hale MJ, Grassman TJ, Kummel AC, Droopad R, Passlack M. Direct and indirect causes of Fermi level pinning at the SiO/GaAs interface. The Journal of Chemical Physics. 126: 084703. PMID 17343465 DOI: 10.1063/1.2363183  0.735
2007 Hale MJ, Yi SI, Sexton JZ, Kummel AC, Passlack M. Erratum: “Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2×8)∕(2×4)” [J. Chem. Phys. 119, 6719 (2003)] The Journal of Chemical Physics. 127: 049902. DOI: 10.1063/1.2748759  0.684
2006 Miller KA, Yang RD, Hale MJ, Park J, Fruhberger B, Colesniuc CN, Schuller IK, Kummel AC, Trogler WC. Electrode independent chemoresistive response for cobalt phthalocyanine in the space charge limited conductivity regime. The Journal of Physical Chemistry. B. 110: 361-6. PMID 16471543 DOI: 10.1021/Jp053104A  0.623
2005 Hale MJ, Winn DL, Grassman TJ, Kummel AC, Droopad R. Chemically resolved scanning tunneling microscopy imaging of Al on p-type Al0.1Ga0.9As(001)-c(2x8)(2x4). The Journal of Chemical Physics. 122: 124702. PMID 15836404 DOI: 10.1063/1.1846051  0.724
2004 Hale MJ, Sexton JZ, Winn DL, Kummel AC, Erbudak M, Passlack M. The influence of bond flexibility and molecular size on the chemically selective bonding of In2O and Ga2O on GaAs(001)-c(2 x 8)/(2 x 4). The Journal of Chemical Physics. 120: 5745-54. PMID 15267453 DOI: 10.1063/1.1648016  0.736
2003 Sexton JZ, Yi SI, Hale M, Kruse P, Demkov AA, Kummel AC. Displacement of surface arsenic atoms by insertion of oxygen atoms into As-Ga backbonds Journal of Chemical Physics. 119: 9191-9198. DOI: 10.1063/1.1614209  0.769
2003 Hale MJ, Yi SI, Sexton JZ, Kummel AC, Passlack M. Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2×8)/(2×4) Journal of Chemical Physics. 119: 6719-6728. DOI: 10.1063/1.1601596  0.781
2003 Passlack M, Abrokwah JK, Droopad R, Yu Z, Overgaard C, Yi SI, Hale M, Sexton J, Kummel AC. Charge balanced Ga2O-GaAs interface and application to self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor Institute of Physics Conference Series. 174: 251-254.  0.652
2002 Passlack M, Abrokwah JK, Droopad R, Yu Z, Overgaard C, Yi SI, Hale M, Sexton J, Kummel AC. Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor Ieee Electron Device Letters. 23: 508-510. DOI: 10.1109/Led.2002.802591  0.683
2001 Yi SI, Kruse P, Hale M, Kummel AC. Adsorption of atomic oxygen on GaAs(001)-(2×4) and the resulting surface structures Journal of Chemical Physics. 114: 3215-3223. DOI: 10.1063/1.1340025  0.731
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