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James M. Zahler, Ph.D. - Publications

Affiliations: 
2005 California Institute of Technology, Pasadena, CA 
Area:
photovoltaics
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14 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2011 Sidhu R, Bennett M, Zahler J, Carlson D. Direct measurement of induced inversion layer sheet resistance by transmission line method Conference Record of the Ieee Photovoltaic Specialists Conference. 002937-002939. DOI: 10.1109/PVSC.2011.6186561  0.402
2008 Pinnington T, Koleske DD, Zahler JM, Ladous C, Park YB, Crawford MH, Banas M, Thaler G, Russell MJ, Olson SM, Atwater HA. InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition Journal of Crystal Growth. 310: 2514-2519. DOI: 10.1016/J.Jcrysgro.2008.01.022  0.522
2007 Zahler JM, Tanabe K, Ladous C, Pinnington T, Newman FD, Atwater HA. InGaAs Solar Cells Grown on Wafer-Bonded InP/Si Epitaxial Templates Mrs Proceedings. 1012. DOI: 10.1557/Proc-1012-Y01-09  0.673
2007 Zahler JM, Tanabe K, Ladous C, Pinnington T, Newman FD, Atwater HA. Photocurrent enhancement in In0.53Ga0.47as solar cells grown on InP/SiO2/Si transferred epitaxial templates Proceedings of Spie - the International Society For Optical Engineering. 6649. DOI: 10.1117/12.734801  0.507
2007 Zahler JM, Fontcuberta I Morral A, Griggs MJ, Atwater HA, Chabal YJ. Role of hydrogen in hydrogen-induced layer exfoliation of germanium Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.035309  0.52
2007 Zahler JM, Tanabe K, Ladous C, Pinnington T, Newman FD, Atwater HA. High efficiency InGaAs solar cells on Si by InP layer transfer Applied Physics Letters. 91. DOI: 10.1063/1.2753751  0.662
2007 Zahler JM, Tanabe K, Ladous C, Pinnington T, Newman FD, Atwater HA. InGaAs solar cells grown on wafer-bonded InP/Si epitaxial templates Materials Research Society Symposium Proceedings. 1012: 21-26.  0.593
2005 Fontcuberta I Morral A, Zahler JM, Griggs MJ, Atwater HA, Chabal YJ. Spectroscopic studies of the mechanism for hydrogen-induced exfoliation of InP Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.085219  0.527
2003 Morral AFi, Zahler JM, Atwater HA, Frank MM, Chabal YJ, Ahrenkiel P, Wanlass M. Electrical and Structural Characterization of the Interface of Wafer Bonded InP/Si Mrs Proceedings. 763. DOI: 10.1557/Proc-763-B2.8  0.601
2003 Fontcuberta i Morral A, Zahler JM, Atwater HA, Ahrenkiel SP, Wanlass MW. InGaAs/InP double heterostructures on InP/Si templates fabricated by wafer bonding and hydrogen-induced exfoliation Applied Physics Letters. 83: 5413-5415. DOI: 10.1063/1.1637429  0.615
2003 Fontcuberta i Morral A, Zahler JM, Atwater HA, Frank MM, Chabal YJ, Ahrenkiel P, Wanlass M. Electrical and structural characterization of the interface of wafer bonded InP/Si Materials Research Society Symposium - Proceedings. 763: 99-104.  0.52
2002 Zahler JM, Ahn CG, Zaghi S, Atwater HA, Chu C, Iles P. Ge layer transfer to Si for photovoltaic applications Thin Solid Films. 403: 558-562. DOI: 10.1016/S0040-6090(01)01570-X  0.568
2002 Zahler JM, Fontcuberta i Morral A, Ahn CG, Atwater HA, Wanlass MW, Chu C, Iles PA. Wafer bonding and layer transfer processes for 4-junction high efficiency solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 1039-1042.  0.396
2001 Zahler JM, Ahn C, Zaghi S, Atwater HA, Chu C, Iles P. Ge Layer Transfer To Si For Photovoltaic Applications Mrs Proceedings. 681. DOI: 10.1557/Proc-681-I4.5  0.63
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