Vladimir V. Protasenko, Ph.D. - Publications

Affiliations: 
2008 University of Notre Dame, Notre Dame, IN, United States 
Area:
nanoscale materials

56 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Islam SM, Protasenko V, Rouvimov S, Xing HG, Jena D. Sub-230nm deep-UV emission from GaN quantum disks in AlN grown by a modified Stranski-Krastanov mode Japanese Journal of Applied Physics. 55. DOI: 10.7567/JJAP.55.05FF06  0.4
2016 Islam SM, Protasenko V, Rouvimov S, Xing HG, Jena D. High-quality InN films on GaN using graded InGaN buffers by MBE Japanese Journal of Applied Physics. 55. DOI: 10.7567/JJAP.55.05FD12  0.4
2016 Nomoto K, Hu Z, Song B, Zhu M, Qi M, Yan R, Protasenko V, Imhoff E, Kuo J, Kaneda N, Mishima T, Nakamura T, Jena D, Xing HG. GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 mω•cm2: A record high figure-of-merit of 12.8 GW/cm2 Technical Digest - International Electron Devices Meeting, Iedm. 2016: 9.7.1-9.7.4. DOI: 10.1109/IEDM.2015.7409665  0.4
2015 Yan R, Fathipour S, Han Y, Song B, Xiao S, Li M, Ma N, Protasenko V, Muller DA, Jena D, Xing HG. Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment. Nano Letters. PMID 26226296 DOI: 10.1021/acs.nanolett.5b01792  0.4
2015 Islam SM, Protasenko V, Rouvimov S, Verma J, Xing H, Jena D. Deep-UV LEDs using polarization-induced doping: Electroluminescence at cryogenic temperatures Device Research Conference - Conference Digest, Drc. 2015: 67-68. DOI: 10.1109/DRC.2015.7175559  0.4
2015 Bjaalie L, Verma A, Himmetoglu B, Janotti A, Raghavan S, Protasenko V, Steenbergen EH, Jena D, Stemmer S, Van De Walle CG. Determination of the Mott-Hubbard gap in GdTiO3 Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/PhysRevB.92.085111  0.4
2015 Hu Z, Nomoto K, Song B, Zhu M, Qi M, Pan M, Gao X, Protasenko V, Jena D, Xing HG. Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown Applied Physics Letters. 107. DOI: 10.1063/1.4937436  0.4
2015 Qi M, Nomoto K, Zhu M, Hu Z, Zhao Y, Protasenko V, Song B, Yan X, Li G, Verma J, Bader S, Fay P, Xing HG, Jena D. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy Applied Physics Letters. 107. DOI: 10.1063/1.4936891  0.4
2015 Qi M, Li G, Protasenko V, Zhao P, Verma J, Song B, Ganguly S, Zhu M, Hu Z, Yan X, Mintairov A, Xing HG, Jena D. Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and 15N isotopes Applied Physics Letters. 106. DOI: 10.1063/1.4906900  0.4
2015 O’Brien WA, Qi M, Yan L, Stephenson CA, Protasenko V, Xing H, Millunchick JM, Wistey MA. Self-assembled Ge QDs Formed by High-Temperature Annealing on Al(Ga)As (001) Journal of Electronic Materials. DOI: 10.1007/s11664-014-3583-6  0.4
2014 O'Brien WA, Wu B, Stephenson C, Liang K, Cress S, Protasenko V, Arisio C, Lieberman M, Xing HG, Wistey MA. Optimal oxide passivation of ge for optoelectronics Ecs Journal of Solid State Science and Technology. 3: P273-P276. DOI: 10.1149/2.0011408jss  0.4
2014 Verma JK, Protasenko VV, Islam SM, Xing H, Jena D. Boost in deep-UV electroluminescence from tunnel-injection GaN/AlN quantum dot LEDs by polarization-induced doping Proceedings of Spie - the International Society For Optical Engineering. 8986. DOI: 10.1117/12.2037132  0.4
2014 Fathipour S, Ma N, Hwang WS, Protasenko V, Vishwanath S, Xing HG, Xu H, Jena D, Appenzeller J, Seabaugh A. Exfoliated multilayer MoTe2 field-effect transistors Applied Physics Letters. 105. DOI: 10.1063/1.4901527  0.4
2014 Hwang WS, Verma A, Peelaers H, Protasenko V, Rouvimov S, Xing H, Seabaugh A, Haensch W, De Walle CV, Galazka Z, Albrecht M, Fornari R, Jena D. High-voltage field effect transistors with wide-bandgap β -Ga 2O3 nanomembranes Applied Physics Letters. 104. DOI: 10.1063/1.4879800  0.4
2014 Li G, Song B, Ganguly S, Zhu M, Wang R, Yan X, Verma J, Protasenko V, Grace Xing H, Jena D. Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN Applied Physics Letters. 104. DOI: 10.1063/1.4875916  0.4
2014 Qi M, Stephenson CA, Protasenko V, O'Brien WA, Mintairov A, Xing H, Wistey MA. Ge quantum dots encapsulated by AlAs grown by molecular beam epitaxy on GaAs without extended defects Applied Physics Letters. 104. DOI: 10.1063/1.4866278  0.4
2014 Verma J, Islam SM, Protasenko V, Kumar Kandaswamy P, Xing H, Jena D. Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures Applied Physics Letters. 104. DOI: 10.1063/1.4862064  0.4
2014 Islam SM, Protasenko V, Xing HG, Jena D, Verma J. Temperature dependence of sub-220nm emission from GaN/AlN quantum structures by plasma assisted molecular beam epitaxy Optics Infobase Conference Papers 0.4
2013 Sensale-Rodriguez B, Rafique S, Yan R, Zhu M, Protasenko V, Jena D, Liu L, Xing HG. Terahertz imaging employing graphene modulator arrays. Optics Express. 21: 2324-30. PMID 23389211 DOI: 10.1364/OE.21.002324  0.4
2013 Verma J, Verma A, Protasenko V, Islam SM, Jena D. Nitride LEDs based on quantum wells and quantum dots Nitride Semiconductor Light-Emitting Diodes (Leds): Materials, Technologies and Applications. 368-408. DOI: 10.1533/9780857099303.2.368  0.4
2013 Hwang WS, Verma A, Protasenko V, Rouvimov S, Xing HG, Seabaugh A, Haensch W, Van De Walle C, Galazka Z, Albrecht M, Forrnari R, Jena D. Nanomembrane β-Ga2O3 high-voltage field effect transistors Device Research Conference - Conference Digest, Drc. 207-208. DOI: 10.1109/DRC.2013.6633866  0.4
2013 Verma J, Kandaswamy PK, Protasenko V, Verma A, Grace Xing H, Jena D. Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes Applied Physics Letters. 102. DOI: 10.1063/1.4789512  0.4
2012 Sensale-Rodriguez B, Yan R, Rafique S, Zhu M, Li W, Liang X, Gundlach D, Protasenko V, Kelly MM, Jena D, Liu L, Xing HG. Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators. Nano Letters. 12: 4518-22. PMID 22862777 DOI: 10.1021/nl3016329  0.4
2012 Sensale-Rodriguez B, Yan R, Rafique S, Mingda Zhu, Kelly M, Protasenko V, Jena D, Liu L, Xing HG. Exceptional tunability of THz reflectance in graphene structures International Conference On Infrared, Millimeter, and Terahertz Waves, Irmmw-Thz. DOI: 10.1109/IRMMW-THz.2012.6380082  0.4
2012 Hwang WS, Remskar M, Yan R, Protasenko V, Tahy K, Chae SD, Xing H, Seabaugh A, Jena D. First demonstration of two-dimensional WS 2 transistors exhibiting 10 5 room temperature modulation and ambipolar behavior Device Research Conference - Conference Digest, Drc. 187-188. DOI: 10.1109/DRC.2012.6257042  0.4
2012 Verma J, Kumar Kandaswamy P, Protasenko V, Verma A, Xing H, Jena D. Tunnel injection GaN/AlN quantum dot UV LED Device Research Conference - Conference Digest, Drc. 249-250. DOI: 10.1109/DRC.2012.6256947  0.4
2012 Sik Hwang W, Remskar M, Yan R, Protasenko V, Tahy K, Doo Chae S, Zhao P, Konar A, Xing H, Seabaugh A, Jena D. Transistors with chemically synthesized layered semiconductor WS 2 exhibiting 10 5 room temperature modulation and ambipolar behavior Applied Physics Letters. 101. DOI: 10.1063/1.4732522  0.4
2011 Verma J, Simon J, Protasenko V, Kosel T, Grace Xing H, Jena D. N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping Applied Physics Letters. 99. DOI: 10.1063/1.3656707  0.4
2011 Goodman KD, Protasenko VV, Verma J, Kosel TH, Xing HG, Jena D. Green luminescence of InGaN nanowires grown on silicon substrates by molecular beam epitaxy Journal of Applied Physics. 109. DOI: 10.1063/1.3575323  0.4
2011 Goodman K, Protasenko V, Verma J, Kosel T, Xing G, Jena D. Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide Journal of Crystal Growth. 334: 113-117. DOI: 10.1016/j.jcrysgro.2011.08.032  0.4
2011 Jena D, Simon J, Wang A, Cao Y, Goodman K, Verma J, Ganguly S, Li G, Karda K, Protasenko V, Lian C, Kosel T, Fay P, Xing H. Polarization-engineering in group III-nitride heterostructures: New opportunities for device design Physica Status Solidi (a) Applications and Materials Science. 208: 1511-1516. DOI: 10.1002/pssa.201001189  0.4
2010 Simon J, Protasenko V, Lian C, Xing H, Jena D. Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures. Science (New York, N.Y.). 327: 60-4. PMID 20044569 DOI: 10.1126/science.1183226  0.4
2010 Verma J, Simon J, Protasenko V, Xing G, Jena D. Polarization-engineered N-face III-V nitride quantum well LEDs Device Research Conference - Conference Digest, Drc. 227-228. DOI: 10.1109/DRC.2010.5551987  0.4
2010 Tahy K, Fleming MJ, Raynal B, Protasenko V, Koswatta S, Jena D, Xing H, Kelly M. Device characteristics of single-layer graphene FETs grown on copper Device Research Conference - Conference Digest, Drc. 77-78. DOI: 10.1109/DRC.2010.5551930  0.4
2009 Giblin J, Protasenko V, Kuno M. Wavelength Sensitivity of Single Nanowire Excitation Polarization Anisotropies Explained through a Generalized Treatment of Their Linear Absorption. Acs Nano. 3: 1979-87. PMID 19548642 DOI: 10.1021/nn900380h  0.4
2008 Yu Y, Protasenko V, Jena D, Xing HG, Kuno M. Photocurrent polarization anisotropy of randomly oriented nanowire networks. Nano Letters. 8: 1352-7. PMID 18393472 DOI: 10.1021/nl080028p  0.4
2008 Lan A, Giblin J, Protasenko V, Kuno M. Excitation and photoluminescence polarization anisotropy of single CdSe nanowires Applied Physics Letters. 92. DOI: 10.1063/1.2924767  0.4
2007 Protasenko V, Gordeyev S, Kuno M. Spatial and intensity modulation of nanowire emission induced by mobile charges. Journal of the American Chemical Society. 129: 13160-71. PMID 17918936 DOI: 10.1021/ja073642w  0.4
2007 Singh A, Li X, Protasenko V, Galantai G, Kuno M, Xing HG, Jena D. Polarization-sensitive nanowire photodetectors based on solution-synthesized CdSe quantum-wire solids. Nano Letters. 7: 2999-3006. PMID 17760476 DOI: 10.1021/nl0713023  0.4
2007 Zhou R, Chang HC, Protasenko V, Kuno M, Singh AK, Jena D, Xing H. CdSe nanowires with illumination-enhanced conductivity: Induced dipoles, dielectrophoretic assembly, and field-sensitive emission Journal of Applied Physics. 101. DOI: 10.1063/1.2714670  0.4
2006 Protasenko V, Bacinello D, Kuno M. Experimental determination of the absorption cross-section and molar extinction coefficient of CdSe and CdTe nanowires. The Journal of Physical Chemistry. B. 110: 25322-31. PMID 17165978 DOI: 10.1021/jp066034w  0.4
2006 Margolin G, Protasenko V, Kuno M, Barkai E. Photon counting statistics for blinking CdSe-ZnS quantum dots: a Lévy walk process. The Journal of Physical Chemistry. B. 110: 19053-60. PMID 16986903 DOI: 10.1021/jp061487m  0.4
2006 Kuno M, Ahmad O, Protasenko V, Bacinello D, Kosel TH. Solution-based straight and branched CdTe nanowires Chemistry of Materials. 18: 5722-5732. DOI: 10.1021/cm061559m  0.4
2006 Margolin G, Protasenko V, Kuno M, Barkai E. Power-law blinking quantum dots: Stochastic and physical models Advances in Chemical Physics. 133: 327-356. DOI: 10.1002/0471790265.ch4  0.4
2005 Protasenko VV, Hull KL, Kuno M. Disorder-induced optical heterogeneity in single CdSe nanowires Advanced Materials. 17: 2942-2949. DOI: 10.1002/adma.200501660  0.4
2004 Protasenko VV, Labardi M, Gallagher A. Conservative and dissipative forces measured by self-oscillator atomic force microscopy at constant-drive amplitude Physical Review B - Condensed Matter and Materials Physics. 70: 1-9. DOI: 10.1103/PhysRevB.70.245414  0.4
2004 Protasenko VV, Gallagher AC. Apertureless near-field scanning optical microscopy of single molecules Nano Letters. 4: 1329-1332. DOI: 10.1021/nl049474c  0.4
2004 Protasenko VV, Gallagher A, Nesbitt DJ. Factors that influence confocal apertureless near-field scanning optical microscopy Optics Communications. 233: 45-56. DOI: 10.1016/j.optcom.2004.01.004  0.4
2003 Protasenko V, Gallagher A, Labardi M, Nesbitt DJ. Enhancement and quenching of the fluorescence of single CdSe/ZnS quantum dots studied by confocal apertureless near-field scanning optical microscope Proceedings of Spie - the International Society For Optical Engineering. 5188: 254-263. DOI: 10.1117/12.504880  0.4
2002 Protasenko VV, Gallagher A, Nesbitt DJ. Fluorescence enhancement in non-contact and dynamic-force apertureless near-field scanning optical microscopy Proceedings of Spie - the International Society For Optical Engineering. 4809: 255-265. DOI: 10.1117/12.456755  0.4
2002 Protasenko VV, Kuno M, Gallagher A, Nesbitt DJ. Fluorescence of single ZnS overcoated CdSe quantum dots studied by apertureless near-field scanning optical microscopy Optics Communications. 210: 11-23. DOI: 10.1016/S0030-4018(02)01759-5  0.4
2000 Yaminsky IV, Bol'shakov AV, Loginov BA, Protasenko VV, Suvorov AL, Kozodaev MA, Volnin DS. Microscopic control for the content of poliomyelitis virus Surface Investigation X-Ray, Synchrotron and Neutron Techniques. 15: 1119-1125.  0.4
1999 Nesterov SB, Vassiliev YK, Saksaganski GL, Loginov BA, Protasenko VV. How the sorbent microgeometry effects the sorptional characteristics of cryopumps Vacuum. 53: 263-267. DOI: 10.1016/S0042-207X(98)00380-7  0.4
1996 Babayev VP, Balabayev AN, Cheblukov YN, Didek AY, Fedotov AS, Popov MO, Protasenko VV, Sheshin EP, Suvorov AL. Radiation modification of carbon surface as means of multi-tips field emission cathode production for different purposes Proceedings of the Ieee International Vacuum Microelectronics Conference, Ivmc. 649.  0.4
1996 Suvorov AL, Sheshin EP, Protasenko VV, Lazarev NE, Bobkov AF, Babaev VP. Plane microrough graphite field-emission cathodes produced by ion bombardment Technical Physics. 41: 719-721.  0.4
1995 Levenets VV, Beklemishev VI, Kirilenko EP, Makhonin II, Trifonov AY, Loginov BA, Protasenko VV. Chemical stability of HBF4-treated (100)Si surfaces Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 34: 1723-1727. DOI: 10.1143/JJAP.34.1723  0.4
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