Year |
Citation |
Score |
2016 |
Polman A, Knight M, Garnett EC, Ehrler B, Sinke WC. Photovoltaic materials: Present efficiencies and future challenges. Science (New York, N.Y.). 352: aad4424. PMID 27081076 DOI: 10.1126/Science.Aad4424 |
0.557 |
|
2011 |
Reich NH, Alsema EA, Van Sark WGJHM, Turkenburg WC, Sinke WC. Greenhouse gas emissions associated with photovoltaic electricity from crystalline silicon modules under various energy supply options Progress in Photovoltaics: Research and Applications. 19: 603-613. DOI: 10.1002/Pip.1066 |
0.523 |
|
2010 |
Reich NH, van Sark WGJHM, Turkenburg WC, Sinke WC. Using CAD software to simulate PV energy yield - The case of product integrated photovoltaic operated under indoor solar irradiation Solar Energy. 84: 1526-1537. DOI: 10.1016/J.Solener.2010.05.015 |
0.501 |
|
2009 |
Reich NH, van Sark WGJHM, Alsema EA, Lof RW, Schropp REI, Sinke WC, Turkenburg WC. Crystalline silicon cell performance at low light intensities Solar Energy Materials and Solar Cells. 93: 1471-1481. DOI: 10.1016/J.Solmat.2009.03.018 |
0.535 |
|
1998 |
Acco S, Williamson DL, Van Sark WGJHM, Sinke WC, Van Der Weg WF, Polman A, Roorda S. Nanoclustering of hydrogen in ion-implanted and plasma-grown amorphous silicon Physical Review B - Condensed Matter and Materials Physics. 58: 12853-12864. |
0.346 |
|
1997 |
Schmidt J, Schuurmans FM, Sinke WC, Glunz SW, Aberle AG. Observation of multiple defect states at silicon-silicon nitride interfaces fabricated by low-frequency plasma-enhanced chemical vapor deposition Applied Physics Letters. 71: 252-254. |
0.323 |
|
1996 |
Acco S, Williamson DL, Stolk PA, Saris FW, van den Boogaard MJ, Sinke WC, van der Weg WF, Roorda S, Zalm PC. Hydrogen solubility and network stability in amorphous silicon. Physical Review. B, Condensed Matter. 53: 4415-4427. PMID 9983995 DOI: 10.1103/PhysRevB.53.4415 |
0.76 |
|
1996 |
Leguijt C, Lölgen P, Eikelboom JA, Weeber AW, Schuurmans FM, Sinke WC, Alkemade PFA, Sarro PM, Marée CHM, Verhoef LA. Low temperature surface passivation for silicon solar cells Solar Energy Materials and Solar Cells. 40: 297-345. DOI: 10.1016/0927-0248(95)00155-7 |
0.391 |
|
1996 |
Schuurmans FM, Schonecker A, Eikelboom JA, Sinke WC. Crystal-orientation dependence of surface recombination velocity for silicon nitride passivated silicon wafers Conference Record of the Ieee Photovoltaic Specialists Conference. 485-488. |
0.34 |
|
1996 |
van Roosmalen JAM, Tool CJJ, Huiberts RC, Beenen RJG, Huijsmans JPP, Sinke WC. Ceramic substrates for thin-film crystalline silicon solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 657-660. |
0.356 |
|
1994 |
Lölgen P, Sinke WC, Leguijt C, Weeber AW, Alkemade PFA, Verhoef LA. Boron doping of silicon using coalloying with aluminium Applied Physics Letters. 65: 2792-2794. DOI: 10.1063/1.112992 |
0.322 |
|
1994 |
Custer JS, Thompson MO, Jacobson DC, Poate JM, Roorda S, Sinke WC, Spaepen F. Density of amorphous Si Applied Physics Letters. 64: 437-439. DOI: 10.1063/1.111121 |
0.777 |
|
1994 |
Leguijt C, Lölgen P, Eikelboom JA, Amesz PH, Steeman RA, Sinke WC, Sarro PM, Verhoef LA, Michiels PP, Chen ZH, Rohatgi A. Very low surface recombination velocities on 2.5 Ω cm Si wafers, obtained with low-temperature PECVD of Si-oxide and Si-nitride Solar Energy Materials and Solar Cells. 34: 177-181. DOI: 10.1016/0927-0248(94)90038-8 |
0.36 |
|
1993 |
Stolk PA, Polman A, Sinke WC. Experimental test of kinetic theories for heterogeneous freezing in silicon. Physical Review. B, Condensed Matter. 47: 5-13. PMID 10004410 DOI: 10.1103/PhysRevB.47.5 |
0.603 |
|
1993 |
Carolissen RJ, Knoesen DK, Sinke WC, Pretorius R. Formation of buried Sb dopant profiles in silicon by pulsed laser epitaxy Journal of Materials Research. 8: 841-846. |
0.393 |
|
1992 |
Stolk PA, Calcagnile L, Roorda S, Sinke WC, Berntsen AJM, Van Der Weg WF. Defects in amorphous silicon probed by subpicosecond photocarrier dynamics Applied Physics Letters. 60: 1688-1690. DOI: 10.1063/1.107212 |
0.781 |
|
1991 |
Roorda S, Sinke WC, Poate JM, Jacobson DC, Dierker S, Dennis BS, Eaglesham DJ, Spaepen F, Fuoss P. Structural relaxation and defect annihilation in pure amorphous silicon. Physical Review. B, Condensed Matter. 44: 3702-3725. PMID 9999999 DOI: 10.1103/Physrevb.44.3702 |
0.783 |
|
1991 |
van Maaren AJP, Zagwijn PM, Sinke WC. Silicon consumption in excimer-laser-assisted chemical vapour deposition of tungsten Materials Science and Engineering B. 8: 181-188. DOI: 10.1016/0921-5107(91)90036-U |
0.321 |
|
1991 |
Poate JM, Coffa S, Jacobson DC, Polman A, Roth JA, Olson GL, Roorda S, Sinke W, Custer JS, Thompson MO, Spaepen F, Donovan E. Amorphous Si - the role of MeV implantation in elucidating defect and thermodynamic properties Nuclear Inst. and Methods in Physics Research, B. 55: 533-543. DOI: 10.1016/0168-583X(91)96226-B |
0.772 |
|
1991 |
Roorda S, Custer JS, Sinke WC, Poate JM, Jacobson DC, Polman A, Spaepen F. Structural relaxation in amorphous silicon and the role of network defects Nuclear Inst. and Methods in Physics Research, B. 59: 344-352. DOI: 10.1016/0168-583X(91)95237-8 |
0.776 |
|
1991 |
Polman A, Roorda S, Stolk PA, Sinke WC. Triggering explosive crystallization of amorphous silicon Journal of Crystal Growth. 108: 114-120. DOI: 10.1016/0022-0248(91)90359-D |
0.782 |
|
1990 |
Verhoef LA, Stroom JC, Bisschop FJ, Liefting JR, Sinke WC. 3D-resolved determination of minority-carrier lifetime in planar silicon solar cells by photocurrent decay Journal of Applied Physics. 68: 6485-6494. DOI: 10.1063/1.346847 |
0.307 |
|
1990 |
Polman A, Stolk PA, Mous DJW, Sinke WC, Bulle-Lieuwma CWT, Vandenhoudt DEW. Pulsed-laser crystallization of amorphous silicon layers buried in a crystalline matrix Journal of Applied Physics. 67: 4024-4035. DOI: 10.1063/1.346076 |
0.448 |
|
1990 |
Verhoef LA, Michiels PP, Sinke WC, Denisse CMM, Hendriks M, Van Zolingen RJC. Combined impurity gettering and defect passivation in polycrystalline silicon solar cells Applied Physics Letters. 57: 2704-2706. DOI: 10.1063/1.103805 |
0.301 |
|
1990 |
Polman A, Jacobson DC, Coffa S, Poate JM, Roorda S, Sinke WC. Defect states of amorphous Si probed by the diffusion and solubility of Cu Applied Physics Letters. 57: 1230-1232. DOI: 10.1063/1.103493 |
0.761 |
|
1990 |
Roorda S, Poate JM, Jacobson DC, Dennis BS, Dierker S, Sinke WC. Raman study of de-relaxation and defects in amorphous silicon induced by MeV ion beams Applied Physics Letters. 56: 2097-2099. DOI: 10.1063/1.102984 |
0.773 |
|
1990 |
Verhoef LA, Michiels PP, Roorda S, Sinke WC, Van Zolingen RJC. Gettering in polycrystalline silicon solar cells Materials Science and Engineering B. 7: 49-62. DOI: 10.1016/0921-5107(90)90009-Z |
0.732 |
|
1990 |
Roorda S, Kammann D, Sinke WC, van de Walle GFA, van Gorkum AA. Influence of layer thickness on nucleation in amorphous silicon thin films Materials Letters. 9: 259-262. DOI: 10.1016/0167-577X(90)90056-R |
0.74 |
|
1990 |
Roorda S, Poate JM, Jacobson DC, Eaglesham DJ, Dennis BS, Dierker S, Sinke WC, Spaepen F. Point defect populations in amorphous and crystalline silicon Solid State Communications. 75: 197-200. DOI: 10.1016/0038-1098(90)90268-G |
0.772 |
|
1990 |
Sinke WC, Roorda S. Aspects of silicon crystallization Journal of Crystal Growth. 99: 222-228. DOI: 10.1016/0022-0248(90)90517-O |
0.776 |
|
1989 |
Roorda S, Doorn S, Sinke WC, Scholte PM, van Loenen E. Calorimetric evidence for structural relaxation in amorphous silicon. Physical Review Letters. 62: 1880-1883. PMID 10039794 DOI: 10.1103/PhysRevLett.62.1880 |
0.744 |
|
1989 |
Polman A, Mous DJW, Stolk PA, Sinke WC, Bulle-Lieuwma CWT, Vandenhoudt DEW. Epitaxial explosive crystallization of amorphous silicon Applied Physics Letters. 55: 1097-1099. DOI: 10.1063/1.101668 |
0.451 |
|
1989 |
Roorda S, Sinke WC. Rapid nucleation in pulsed laser heated amorphous Si Applied Surface Science. 36: 588-596. DOI: 10.1016/0169-4332(89)90954-9 |
0.762 |
|
1989 |
Sinke WC, Warabisako T, Miyao M, Tokuyama T, Roorda S. The structure of nanocrystalline silicon formed by laser-induced explosive crystallization Applied Surface Science. 36: 460-470. DOI: 10.1016/0169-4332(89)90941-0 |
0.75 |
|
1989 |
Sinke WC, Polman A, Roorda S, Stolk PA. Explosive crystallization of amorphous silicon: triggering and propagation Applied Surface Science. 43: 128-135. DOI: 10.1016/0169-4332(89)90201-8 |
0.739 |
|
1989 |
Polman A, Sinke WC, Uttormark MJ, Thompson MO. Pulsed-laser induced transient phase transformations at the Si-H2O interface Journal of Materials Research. 4: 843-856. |
0.355 |
|
1988 |
Polman A, Sinke W, Saris FW, Uttormark MJ, Thompson MO. Quench rate enhancement in pulsed laser melting of Si by processing under water Applied Physics Letters. 52: 535-537. DOI: 10.1063/1.99408 |
0.698 |
|
1988 |
Miyao M, Moniwa M, Kusukawa K, Sinke W. Low-temperature SOI (Si-on-insulator) formation by lateral solid-phase epitaxy Journal of Applied Physics. 64: 3018-3023. DOI: 10.1063/1.341565 |
0.326 |
|
1988 |
Sinke W, Warabisako T, Miyao M, Tokuyama T, Roorda S, Saris FW. Transient structural relaxation of amorphous silicon Journal of Non-Crystalline Solids. 99: 308-323. DOI: 10.1016/0022-3093(88)90439-5 |
0.792 |
|
1988 |
Sinke WC, Roorda S, Saris FW. Variable strain energy in amorphous silicon Journal of Materials Research. 3: 1201-1207. |
0.651 |
|
1987 |
Sinke W, Polman A, Saris FW. A comparison between excimer laser and thermal annealing for ion-implanted polycrystalline silicon solar cells Solar Cells. 20: 51-57. DOI: 10.1016/0379-6787(87)90020-2 |
0.721 |
|
1986 |
Sinke W, Saris FW, Barbour JC, Mayer JW. SOLID-PHASE EPITAXIAL REGROWTH OF FINE-GRAIN POLYCRYSTALLINE SILICON. Journal of Materials Research. 1: 155-161. DOI: 10.1557/JMR.1986.0155 |
0.681 |
|
1986 |
Bruines JJP, Van Hal RPM, Boots HMJ, Sinke W, Saris FW. Direct observation of resolidification from the surface upon pulsed-laser melting of amorphous silicon Applied Physics Letters. 48: 1252-1254. DOI: 10.1063/1.96995 |
0.695 |
|
1986 |
Miyao M, Polman A, Sinke W, Saris FW, Van Kemp R. Electron irradiation-activated low-temperature annealing of phosphorus-implanted silicon Applied Physics Letters. 48: 1132-1134. DOI: 10.1063/1.96447 |
0.683 |
|
1986 |
Polman A, Van Sark WGJHM, Sinke W, Saris FW. A new method for the evaluation of solar cell parameters Solar Cells. 17: 241-251. DOI: 10.1016/0379-6787(86)90015-3 |
0.598 |
|
1986 |
Miyao M, Polman A, van Kemp R, Sinke W, Westendorp JEM, van der Veen JF, Saris FW. ELECTRON AND ION BEAM-STIMULATED SOLID PHASE REGROWTH OF PHOSPHORUS-IMPLANTED SILICON. Conference On Solid State Devices and Materials. 557-560. |
0.727 |
|
1986 |
Sinke W, Polman A, Saris FW. COMPARISON BETWEEN EXCIMER LASER AND THERMAL ANNEALING FOR ION-IMPLANTED POLYCRYSTALLINE SILICON SOLAR CELLS. Solar Cells. 38: 51-57. |
0.721 |
|
1985 |
Sinke W, Frijlink GPA, Saris FW. Oxygen in titanium nitride diffusion barriers Applied Physics Letters. 47: 471-473. DOI: 10.1063/1.96151 |
0.609 |
|
1985 |
Sinke W, Saris FW. LOW-ENERGY, PULSED-LASER IRRADIATION OF AMORPHOUS SILICON: MELTING AND RESOLIDIFICATION AT TWO FRONTS. Materials Research Society Symposia Proceedings. 35: 175-180. |
0.701 |
|
1985 |
Sinke W, Polman A, Van Sark WGJHM, Saris FW. USE OF A PULSED LASER FOR SHALLOW-JUNCTION PROCESSING. Commission of the European Communities, (Report) Eur. 1011-1016. |
0.637 |
|
1984 |
Sinke W, Saris FW. Evidence for a self-propagating melt in amorphous silicon upon pulsed-laser irradiation Physical Review Letters. 53: 2121-2124. DOI: 10.1103/PhysRevLett.53.2121 |
0.687 |
|
1984 |
Sinke W, van Sark W, Doorn S, Saris FW, Donon J, Loubly P, David G. POLYSILICON SOLAR CELLS MADE BY ION IMPLANTATION AND PULSED LASER ANNEALING. Commission of the European Communities, (Report) Eur. 1095-1103. |
0.685 |
|
1982 |
Sinke W, Hoonhout D, Saris FW. INFLUENCE OF SURFACE TEXTURE AND THERMAL TREATMENT ON THE PERFORMANCE OF LASER-ANNEALED SILICON SOLAR CELLS Commission of the European Communities, (Report) Eur. 1029-1033. |
0.695 |
|
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