Eric J. Tonnis, Ph.D. - Publications

2000 University of California, Berkeley, Berkeley, CA 

5 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2014 Hwang S, Tonnis E. A systematic methodology for etch chamber matching to meet leading edge requirements Asmc (Advanced Semiconductor Manufacturing Conference) Proceedings. 393-396. DOI: 10.1109/ASMC.2014.6846962  1
2004 Vartanian V, Goolsby B, Chatterjee R, Kachmarik R, Babbitt D, Reif R, Tonnis EJ, Graves D. Reduction of semiconductor process emissions by reactive gas optimization Ieee Transactions On Semiconductor Manufacturing. 17: 483-490. DOI: 10.1109/TSM.2004.837004  1
2002 Tonnis EJ, Graves DB. Neutral gas temperatures measured within a high-density, inductively coupled plasma abatement device Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 20: 1787-1795. DOI: 10.1116/1.1503901  1
2000 Tonnis EJ, Graves DB, Vartanian VH, Beu L, Lii T, Jewett R. Inductively coupled, point-of-use plasma abatement of perfluorinated compounds and hydrofluorinated compounds from etch processes utilizing O2 and H2O as additive gases Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 18: 393-400. DOI: 10.1116/1.582199  1
2000 Vartanian V, Beu L, Lii T, Graves D, Tonnis EJ, Jewett R, Wofford B, Bevan J, Hartz C, Gunn M. Plasma abatement reduces PFC emission Semiconductor International. 23: 191-192, 194, 196, 1.  1
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